IXTY3N50P N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTY3N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 3.6A continuous drain current at 25°C. The device is housed in a TO-252AA surface mount package and is part of the PolarHV™ series. This part is currently obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. Substitute parts must maintain compatibility with the original electrical specifications and mechanical package requirements while offering active product status where available.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	3.6	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	2	Ohm @ 1.8A, 10V
Power Dissipation (Max)	70	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Vgs (Max)	±30	V

Substitute Part Grouping Explanation

Substitution of the IXTY3N50P is determined by the following critical parameters:

Electrical Compatibility Criteria:

FET Type: N-Channel topology must be maintained
Drain to Source Voltage (Vdss): Substitute must equal or exceed 500V
Continuous Drain Current (Id): Substitute must support the application's current requirements
Drive Voltage: Gate drive voltage compatibility at 10V
Rds On (Max): On-resistance characteristics at specified gate voltage and current
Power Dissipation: Thermal capability must meet or exceed 70W (Tc)
Operating Temperature: Must support -55°C to 150°C range or equivalent

Mechanical Compatibility Criteria:

Mounting Type: Surface Mount required
Package / Case: TO-252-3 DPAK footprint compatibility

Substitute parts are grouped into two categories: direct replacements with identical or superior electrical ratings within the same package family, and functional equivalents with comparable performance characteristics that maintain circuit operation within design margins.

Parameter Comparison

Parameter	IXTY3N50P	IXTY4N65X2	STD4N52K3	STD6N52K3	TK4P50D	TK4P55D	TK4P55DA
Manufacturer	IXYS	IXYS	STMicroelectronics	STMicroelectronics	Toshiba	Toshiba	Toshiba
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	500	650	525	525	500	550	550
Id @ 25°C (A)	3.6	4	2.5	5	4	4	3.5
Rds On (Max) @ 10V (Ohm)	2 @ 1.8A	0.85 @ 2A	2.6 @ 1.25A	1.2 @ 2.5A	2 @ 2A	1.88 @ 2A	2.45 @ 1.8A
Power Dissipation (Max) (W)	70	80	45	70	80	80	80
Operating Temperature (°C)	-55 to 150	-55 to 150	to 150	to 150	to 150	to 150	to 150
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package	TO-252AA	TO-252AA	DPAK	DPAK	DPAK	DPAK	DPAK
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
Vgs (Max) (V)	±30	±30	±30	±30	±30	±30	±30

Engineering Selection Recommendations

IXTY4N65X2 (IXYS, Active Status)

The IXTY4N65X2 is an active product from the same manufacturer (IXYS) with superior voltage rating (650V vs. 500V) and higher current capability (4A vs. 3.6A). It maintains identical gate drive voltage (10V) and package format (TO-252AA). Power dissipation is increased to 80W. This part provides direct functional replacement with enhanced performance margins and active product support. RoHS3 compliance is confirmed.

STD6N52K3 (STMicroelectronics, Active Status)

The STD6N52K3 offers the closest match to original power dissipation (70W) with superior current rating (5A vs. 3.6A) and lower on-resistance (1.2 Ohm @ 2.5A vs. 2 Ohm @ 1.8A). Voltage rating is slightly elevated (525V vs. 500V). The part is housed in DPAK package (mechanically compatible with TO-252-3 footprint) and carries active product status with RoHS3 compliance. Gate charge is not specified in available data.

STD4N52K3 (STMicroelectronics, Active Status)

The STD4N52K3 provides conservative substitution with voltage rating of 525V and reduced current capability (2.5A vs. 3.6A). Power dissipation is limited to 45W, making this suitable only for applications with lower thermal demands. RoHS3 compliance is confirmed. This part is appropriate where current requirements do not exceed 2.5A.

TK4P50D (Toshiba, Active Status)

The TK4P50D matches the original voltage specification (500V) with increased current rating (4A vs. 3.6A) and identical on-resistance (2 Ohm @ 2A). Power dissipation is 80W. DPAK package provides mechanical compatibility. RoHS compliance is confirmed. This part offers direct electrical compatibility with enhanced current capacity.

TK4P55D (Toshiba, Active Status)

The TK4P55D provides voltage margin (550V vs. 500V) with 4A current rating and improved on-resistance (1.88 Ohm @ 2A). Power dissipation is 80W. DPAK package is compatible. RoHS compliance is confirmed. This part is suitable for applications requiring enhanced voltage headroom.

TK4P55DA (Toshiba, Active Status)

The TK4P55DA offers 550V voltage rating with 3.5A current capability, closely matching the original 3.6A specification. On-resistance is 2.45 Ohm @ 1.8A. Power dissipation is 80W. DPAK package is compatible. RoHS compliance is confirmed. This part provides the closest current match among Toshiba alternatives.

All substitute parts maintain N-Channel MOSFET topology, ±30V gate voltage rating, and surface mount configuration. All active products carry appropriate compliance certifications (RoHS3 or RoHS Compliant). Selection should be based on specific application current requirements, thermal constraints, and voltage margin requirements.

Frequently Asked Questions (FAQ)

Q: Can the IXTY4N65X2 directly replace the IXTY3N50P without PCB modifications?

A: Yes. Both parts use the TO-252AA package with identical pinout and footprint. The IXTY4N65X2 maintains the same gate drive voltage (10V) and gate voltage rating (±30V). No PCB layout changes are required. The higher voltage rating (650V) and current capability (4A) provide enhanced performance margins.

Q: What is the difference between TO-252AA and DPAK packages?

A: TO-252AA and DPAK (TO-252-3) are mechanically equivalent surface mount packages with identical lead spacing and footprint. Both designations refer to the same physical package format. Parts specified as DPAK are directly compatible with TO-252AA PCB layouts.

Q: Why does STD6N52K3 have lower on-resistance than the original IXTY3N50P?

A: On-resistance is a function of die design, process technology, and gate voltage. The STD6N52K3 uses STMicroelectronics' SuperMESH3™ technology, which achieves lower on-resistance through optimized semiconductor structure. Lower on-resistance reduces power dissipation in switching applications.

Q: Is the IXTY3N50P still available for purchase?

A: The IXTY3N50P is classified as obsolete. Current inventory exists (838 Pcs reported), but future availability is not guaranteed. Active substitute parts (IXTY4N65X2, STD6N52K3, TK4P50D, TK4P55D, TK4P55DA) are recommended for new designs and ongoing production.

Q: Which substitute part has the lowest power dissipation?

A: The STD4N52K3 has the lowest power dissipation rating at 45W. However, this part also has the lowest current rating (2.5A). For applications requiring 3.6A or higher current, STD6N52K3, IXTY4N65X2, TK4P50D, TK4P55D, or TK4P55DA are more appropriate, all rated at 70W or 80W.

Q: Are all substitute parts RoHS compliant?

A: Yes. All active substitute parts carry RoHS3 Compliant or RoHS Compliant certification. The original IXTY3N50P does not specify RoHS status. All substitute parts meet current environmental compliance requirements.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge affects gate drive circuit design and switching speed. The IXTY3N50P specifies 9.3 nC @ 10V. Substitute parts range from 2 nC (STD4N52K3) to 11 nC (TK4P55D). Lower gate charge enables faster switching; higher gate charge requires more robust gate drive circuitry. Existing gate drive circuits designed for the original part will function with all substitutes, though switching characteristics will vary.

Q: Can I use TK4P55DA in place of IXTY3N50P if my application requires exactly 3.6A?

A: The TK4P55DA is rated for 3.5A continuous drain current, which is 0.1A below the original 3.6A specification. For applications requiring sustained 3.6A operation, use IXTY4N65X2 (4A), STD6N52K3 (5A), TK4P50D (4A), or TK4P55D (4A) instead.

Q: What is the operating temperature range for all substitute parts?

A: All substitute parts support operation to 150°C (TJ). The original IXTY3N50P specifies -55°C to 150°C. Substitute parts either match this range or specify operation to 150°C without explicit lower temperature limit. For applications requiring -55°C operation, verify specific datasheet requirements.

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