IXTY2N65X2 N-Channel MOSFET 650V 2A TO-252 Equivalent & Substitute Parts

Part Overview

The IXTY2N65X2 is an N-Channel MOSFET manufactured by IXYS in the Ultra X2 series, rated for 650V drain-to-source voltage with 2A continuous drain current at 25°C. This device is housed in a TO-252AA surface mount package and is designed for high-voltage switching applications. The part is Active status and RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, gate charge, and compatible surface mount packaging. Substitutes must maintain functional compatibility within the same TO-252-3 DPAK package family.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	2	A
Rds On (Max) @ Id, Vgs	2.3	Ohm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs	4.3	nC @ 10V
Vgs(th) (Max) @ Id	5	V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds	180	pF @ 25V
Power Dissipation (Max)	55	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252-3, DPAK	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IXTY2N65X2 are selected based on the following critical parameters that determine functional compatibility:

Voltage Rating Compatibility: Substitute parts must have a drain-to-source voltage (Vdss) rating equal to or greater than 650V to ensure safe operation in the same circuit topology.

Current Capability: Substitute parts must support continuous drain current (Id) at 25°C equal to or greater than 2A to handle the same load conditions.

On-Resistance (Rds On): Substitute parts must maintain comparable or lower on-resistance at rated gate voltage (10V) to ensure similar power dissipation and thermal performance.

Gate Charge (Qg): Substitute parts with lower gate charge enable faster switching and reduced driver power requirements.

Package Compatibility: All substitute parts must use the TO-252-3 DPAK surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts.

Compliance & Status: All substitute parts must maintain Active product status and RoHS3 compliance with MSL 1 rating.

The three identified substitute parts (FDD5N60NZTM, IPD80R2K0P7ATMA1, and STD4N62K3) meet these criteria with varying trade-offs in voltage rating, current capacity, and thermal performance.

Parameter Comparison

Parameter	IXTY2N65X2 (Main)	FDD5N60NZTM	IPD80R2K0P7ATMA1	STD4N62K3
Manufacturer	IXYS	onsemi	Infineon Technologies	STMicroelectronics
Series	Ultra X2	UniFET-II™	CoolMOS™ P7	SuperMESH3™
Vdss (V)	650	600	800	620
Id @ 25°C (A)	2	4	3	3.8
Rds On (Max) @ 10V	2.3 Ohm @ 1A	2 Ohm @ 2A	2 Ohm @ 940mA	1.95 Ohm @ 1.9A
Vgs(th) (Max) @ Id	5V @ 250µA	5V @ 250µA	3.5V @ 50µA	4.5V @ 50µA
Gate Charge (Qg) @ 10V (nC)	4.3	13	9	14
Ciss (Max) @ Vds (pF)	180 @ 25V	600 @ 25V	175 @ 500V	450 @ 50V
Power Dissipation (Max) (W)	55	83	24	70
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-252AA	TO-252AA	PG-TO252-3	DPAK
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

FDD5N60NZTM (onsemi UniFET-II™): This substitute operates at 600V, which is 50V below the main part's 650V rating. It provides superior current handling at 4A continuous drain current and lower on-resistance at 2Ohm. The higher gate charge (13nC) and input capacitance (600pF) result in increased switching losses compared to the IXTY2N65X2. This part is suitable for applications where the 600V rating is sufficient and higher current capacity is beneficial. All compliance certifications match the main part.

IPD80R2K0P7ATMA1 (Infineon CoolMOS™ P7): This substitute provides the highest voltage rating at 800V, exceeding the main part by 150V. It delivers 3A continuous drain current with comparable on-resistance at 2Ohm. The lower gate charge (9nC) and lower threshold voltage (3.5V) enable faster switching and reduced driver requirements. Power dissipation is limited to 24W, which is lower than the main part. This part is suitable for high-voltage applications requiring enhanced voltage margin. All compliance certifications match the main part.

STD4N62K3 (STMicroelectronics SuperMESH3™): This substitute operates at 620V, which is 30V below the main part's 650V rating. It provides the highest current capacity at 3.8A and the lowest on-resistance at 1.95Ohm, resulting in superior thermal performance with 70W power dissipation. The higher gate charge (14nC) and input capacitance (450pF) increase switching losses. This part is suitable for applications prioritizing current handling and thermal efficiency within the 620V voltage envelope. All compliance certifications match the main part.

All three substitute parts maintain Active product status, RoHS3 compliance, and MSL 1 rating, ensuring regulatory and environmental compatibility with the original IXTY2N65X2.

Frequently Asked Questions (FAQ)

Q: Can the FDD5N60NZTM replace the IXTY2N65X2 in a 650V application?

A: The FDD5N60NZTM has a maximum Vdss rating of 600V, which is 50V below the IXTY2N65X2's 650V rating. Direct substitution in circuits designed for 650V operation is not recommended, as the lower voltage rating reduces safety margin and may result in device failure under peak voltage conditions.

Q: What are the switching performance differences between these substitutes?

A: Gate charge (Qg) directly affects switching speed and driver power consumption. The IXTY2N65X2 has the lowest gate charge at 4.3nC, enabling fastest switching. The IPD80R2K0P7ATMA1 (9nC) provides moderate switching performance, while FDD5N60NZTM (13nC) and STD4N62K3 (14nC) have higher gate charges resulting in slower switching and increased driver power requirements.

Q: Are all substitute parts compatible with existing PCB layouts?

A: All substitute parts use the TO-252-3 DPAK surface mount package, which is mechanically and electrically compatible with the IXTY2N65X2's TO-252AA package. PCB footprints and land patterns are interchangeable without modification.

Q: Which substitute offers the best thermal performance?

A: The STD4N62K3 provides the highest power dissipation rating at 70W and the lowest on-resistance at 1.95Ohm, resulting in superior thermal performance. The IPD80R2K0P7ATMA1 has the lowest power dissipation at 24W, suitable for applications with strict thermal constraints.

Q: Do all parts meet the same compliance requirements?

A: Yes. All substitute parts (FDD5N60NZTM, IPD80R2K0P7ATMA1, and STD4N62K3) are RoHS3 compliant with MSL 1 rating and Active product status, matching the IXTY2N65X2's regulatory and environmental certifications.

Q: What is the primary trade-off when selecting the IPD80R2K0P7ATMA1?

A: The IPD80R2K0P7ATMA1 provides the highest voltage rating (800V) and lowest gate charge (9nC) for fast switching, but delivers lower continuous current (3A) and power dissipation (24W) compared to the main part. This makes it suitable for high-voltage, lower-current applications.

Q: Can the STD4N62K3 handle higher current loads than the IXTY2N65X2?

A: Yes. The STD4N62K3 is rated for 3.8A continuous drain current compared to the IXTY2N65X2's 2A, providing 90% higher current capacity. However, its 620V voltage rating is 30V below the main part's 650V rating.

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