IXTY2N60P N-Channel 600V 2A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTY2N60P is an N-Channel 600V 2A MOSFET manufactured by IXYS in the Polar™ series, housed in a TO-252AA (DPAK) surface mount package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. The IXTY2N60P serves applications requiring 600V drain-to-source voltage capability with 2A continuous drain current at 25°C and 55W maximum power dissipation.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	2	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ 1A, 10V	5.1	Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	7	nC
Input Capacitance (Ciss) @ 25V	240	pF
Power Dissipation (Max)	55	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252-3 DPAK	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IXTY2N60P is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V minimum (higher voltage ratings acceptable)
Continuous Drain Current (Id): 2A minimum at 25°C
Package Type: TO-252-3 DPAK (surface mount compatibility required)
Gate Drive Voltage: 10V maximum Rds On specification
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Factors:

Rds On (Max) @ 1A, 10V: Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching speed
Power Dissipation: 45W to 56.8W acceptable range

Substitute parts must maintain electrical compatibility within the application's voltage and current requirements while preserving the same physical footprint for PCB integration.

Parameter Comparison

Parameter	IXTY2N60P	IXTY2N65X2	AOD2N60	FQD2N60CTM	STD2HNK60Z	STD2LN60K3
Manufacturer	IXYS	IXYS	Alpha & Omega	onsemi	STMicroelectronics	STMicroelectronics
Vdss (V)	600	650	600	600	600	600
Id @ 25°C (A)	2	2	2	1.9	2	2
Rds On (Max) @ 1A, 10V (Ohm)	5.1	2.3	4.4	4.7	4.8	4.5
Vgs(th) @ 250µA (V)	5	5	4.5	4	4.5	4.5
Gate Charge (Qg) @ 10V (nC)	7	4.3	11	12	15	12
Ciss @ 25V (pF)	240	180	325	235	280	235
Power Dissipation (Max) (W)	55	55	56.8	44	45	45
Operating Temperature (°C)	-55 to 150	-55 to 150	-50 to 150	-55 to 150	-55 to 150	150
Package	TO-252AA	TO-252AA	TO-252 DPAK	TO-252AA	DPAK	DPAK
Product Status	Obsolete	Active	Not For New Designs	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IXTY2N65X2

The IXTY2N65X2 is the preferred substitute for the obsolete IXTY2N60P. Both devices are manufactured by IXYS and share the same TO-252AA package footprint. The IXTY2N65X2 offers superior electrical performance with 650V Vdss rating (50V margin above the original specification), reduced Rds On of 2.3Ohm (55% improvement), and lower gate charge of 4.3nC (39% reduction). The device maintains identical 2A continuous drain current and 55W power dissipation. The IXTY2N65X2 carries Active product status and ROHS3 compliance, ensuring long-term availability and regulatory alignment.

Secondary Recommendation: STD2LN60K3

The STD2LN60K3 from STMicroelectronics provides a cost-effective alternative with exact electrical specifications matching the IXTY2N60P (600V, 2A, 45W). This device features improved Rds On of 4.5Ohm and reduced gate charge of 12nC. The STD2LN60K3 is ROHS3 compliant and carries Active product status. The DPAK package is mechanically compatible with the original TO-252AA footprint.

Alternative Option: STD2HNK60Z

The STD2HNK60Z from STMicroelectronics offers equivalent electrical performance with 600V, 2A rating and 45W power dissipation. This device features Rds On of 4.8Ohm and gate charge of 15nC. Active product status and ROHS3 compliance support production continuity.

Not Recommended for New Designs: AOD2N60

The AOD2N60 carries "Not For New Designs" product status and is therefore unsuitable for new applications despite electrical compatibility.

Limited Suitability: FQD2N60CTM

The FQD2N60CTM from onsemi presents a marginal substitute due to reduced continuous drain current of 1.9A (5% below specification). While electrically compatible at 600V and featuring Active product status with ROHS3 compliance, this device operates at the lower boundary of current requirements and may not satisfy all application demands.

Frequently Asked Questions (FAQ)

Q: Can the IXTY2N65X2 directly replace the IXTY2N60P without circuit modifications?

A: Yes. The IXTY2N65X2 maintains identical package geometry (TO-252AA), gate drive voltage (10V), operating temperature range (-55°C to 150°C), and continuous drain current (2A). The higher Vdss rating (650V vs. 600V) provides additional voltage margin without requiring design changes. The improved Rds On and reduced gate charge enhance overall circuit performance.

Q: What is the significance of the Rds On parameter in substitute selection?

A: Rds On (on-state resistance) directly affects power dissipation and heat generation during device operation. Lower Rds On values reduce conduction losses. The IXTY2N60P specifies 5.1Ohm maximum at 1A, 10V. Substitute devices with lower Rds On values (such as IXTY2N65X2 at 2.3Ohm) improve efficiency and reduce thermal stress on the component and PCB.

Q: Why is gate charge (Qg) important for MOSFET substitution?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. The IXTY2N60P specifies 7nC at 10V. Substitutes with higher gate charge (such as AOD2N60 at 11nC or STD2HNK60Z at 15nC) require more drive energy but remain functionally compatible.

Q: Are all substitute parts ROHS3 compliant?

A: The IXTY2N60P does not specify RoHS status. All recommended substitute parts (IXTY2N65X2, STD2LN60K3, STD2HNK60Z, FQD2N60CTM) carry ROHS3 compliance certification, ensuring compatibility with current environmental regulations and supply chain requirements.

Q: What is the difference between TO-252AA and DPAK packaging?

A: TO-252AA and DPAK are equivalent designations for the same physical package: a three-lead surface mount component with two signal leads and one tab lead. All substitute parts listed use this identical package footprint, ensuring direct PCB compatibility without layout modifications.

Q: Can the FQD2N60CTM be used as a substitute despite its 1.9A rating?

A: The FQD2N60CTM operates at 1.9A continuous drain current, which is 5% below the IXTY2N60P specification of 2A. This device is suitable only for applications where the actual circuit current demand does not exceed 1.9A. For designs requiring the full 2A specification, alternative substitutes with 2A ratings are required.

Q: Why is the AOD2N60 not recommended despite electrical compatibility?

A: The AOD2N60 carries "Not For New Designs" product status, indicating the manufacturer has discontinued active support and development. While electrically compatible, this designation signals potential future availability constraints and lack of manufacturer support for new applications.

Q: What is the operating temperature significance for the STD2LN60K3?

A: The STD2LN60K3 specifies a maximum operating temperature of 150°C (Tj), matching the IXTY2N60P upper limit. However, the STD2LN60K3 does not specify a minimum temperature, whereas the IXTY2N60P guarantees operation from -55°C. For applications requiring full -55°C to 150°C operation, the IXTY2N65X2, STD2HNK60Z, or FQD2N60CTM are preferred.

Q: How does input capacitance (Ciss) affect circuit performance?

A: Input capacitance affects gate drive circuit design and switching speed. The IXTY2N60P specifies 240pF at 25V. Substitute devices range from 180pF (IXTY2N65X2, improved switching) to 325pF (AOD2N60, slower switching). Lower Ciss values reduce gate drive requirements and improve high-frequency switching performance.

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