IXTY1R6N50P Equivalent & Substitute Parts

Part Overview

The IXTY1R6N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 1.6A continuous drain current. This device is housed in a TO-252AA surface mount package and is part of the PolarHV™ series. The part is currently listed as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	1.6	A
Rds On (Max) @ 500mA, 10V	6.5	Ohm
Gate Threshold Voltage (Vgs(th)) @ 25µA	5.5	V
Power Dissipation (Max)	43	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252AA	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IXTY1R6N50P is determined by electrical and mechanical compatibility within the following criteria:

Primary Substitution Parameters:

Drain-to-Source Voltage (Vdss) rating must equal or exceed 500V
Continuous drain current (Id) must meet or exceed 1.6A at 25°C
On-state resistance (Rds On) must not exceed the original specification to maintain circuit performance
Gate threshold voltage (Vgs(th)) must be compatible with existing drive circuitry
Package type must be TO-252AA to ensure mechanical and thermal compatibility
Operating temperature range must encompass -55°C to 150°C

Substitute Parts Identified:

The IXTY2N65X2 (IXYS, Ultra X2 series) meets the voltage and current requirements with improved specifications. This part is rated for 650V Vdss and 2A continuous drain current, providing margin above the original 500V/1.6A rating. The part is active and available in production quantities.

The RFD3055LESM9A (onsemi) does not meet the primary voltage requirement, as it is rated for only 60V Vdss. This part is listed for reference only and is not suitable as a direct substitute for applications requiring 500V operation.

Parameter Comparison

Parameter	IXTY1R6N50P	IXTY2N65X2	RFD3055LESM9A
Manufacturer	IXYS	IXYS	onsemi
Vdss (V)	500	650	60
Id @ 25°C (A)	1.6	2	11
Rds On (Max) (Ohm)	6.5 @ 500mA, 10V	2.3 @ 1A, 10V	0.107 @ 8A, 5V
Vgs(th) (Max) (V)	5.5 @ 25µA	5 @ 250µA	3 @ 250µA
Gate Charge (Qg) @ 10V (nC)	3.9	4.3	11.3
Power Dissipation (Max) (W)	43	55	38
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 175
Package	TO-252AA	TO-252AA	TO-252AA
Product Status	Obsolete	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXTY2N65X2 (Recommended Substitute)

The IXTY2N65X2 is the primary substitute for the IXTY1R6N50P. This part is manufactured by IXYS and maintains the same package format (TO-252AA). The IXTY2N65X2 is rated for 650V Vdss, which exceeds the original 500V requirement, and provides 2A continuous drain current compared to the original 1.6A. The on-state resistance is improved at 2.3 Ohm versus 6.5 Ohm, resulting in lower power dissipation and improved thermal performance. The part is currently in active production status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1). Inventory availability is confirmed at 758 pieces.

RFD3055LESM9A (Not Recommended for Direct Substitution)

The RFD3055LESM9A is not suitable as a direct substitute for the IXTY1R6N50P due to insufficient voltage rating. The RFD3055LESM9A is rated for 60V Vdss, which is inadequate for applications requiring 500V operation. This part is included in the reference list but should not be selected for circuits designed around the original 500V specification. The RFD3055LESM9A is appropriate only for low-voltage applications with different design requirements.

Frequently Asked Questions (FAQ)

Q: Can the IXTY2N65X2 be used as a direct replacement for the IXTY1R6N50P?

A: Yes. The IXTY2N65X2 meets all electrical and mechanical requirements for substitution. Both parts are housed in TO-252AA packages, operate across the same temperature range (-55°C to 150°C), and share compatible gate drive characteristics. The IXTY2N65X2 provides higher voltage and current ratings, making it suitable for the original application.

Q: Why is the RFD3055LESM9A listed if it cannot substitute the IXTY1R6N50P?

A: The RFD3055LESM9A is included in the reference documentation because it shares the same package format (TO-252AA) and is manufactured by a major semiconductor supplier. However, its 60V voltage rating makes it unsuitable for 500V applications. This part is listed to prevent accidental selection and to clarify that package compatibility alone does not determine substitution suitability.

Q: What are the key differences between the IXTY1R6N50P and IXTY2N65X2?

A: The primary differences are voltage rating (500V versus 650V), current rating (1.6A versus 2A), and on-state resistance (6.5 Ohm versus 2.3 Ohm). The IXTY2N65X2 offers improved performance characteristics while maintaining package and temperature range compatibility. Both parts use the same drive voltage (10V) and share similar gate threshold voltages.

Q: Are there any compliance or regulatory differences between these parts?

A: The IXTY2N65X2 is ROHS3 compliant, while the IXTY1R6N50P compliance status is not specified in the available documentation. Both parts are REACH unaffected and carry EAR99 ECCN classification. Both maintain MSL 1 (unlimited) moisture sensitivity level. The IXTY2N65X2 is the recommended choice for new designs requiring regulatory compliance documentation.

Q: What is the impact of the lower on-state resistance in the IXTY2N65X2?

A: The IXTY2N65X2 exhibits lower on-state resistance (2.3 Ohm at 1A, 10V versus 6.5 Ohm at 500mA, 10V). This results in reduced power dissipation during conduction, lower junction temperatures, and improved overall circuit efficiency. The lower resistance also reduces voltage drop across the device during operation.

Q: Can the IXTY1R6N50P be used in applications designed for the IXTY2N65X2?

A: No. The IXTY1R6N50P has lower voltage and current ratings than the IXTY2N65X2. Using the original part in a circuit designed for the higher-rated substitute would result in inadequate performance and potential device failure. Substitution must proceed from lower-rated to higher-rated parts only.

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