IXTY1R4N100P N-Channel 1000V 1.4A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTY1R4N100P is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 1.4A continuous drain current at 25°C. This device is housed in a Surface Mount TO-252AA package and is designed for high-voltage switching applications. The part is currently Active in product status with 1037 pieces in stock inventory.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across critical parameters including drain-to-source voltage rating, continuous drain current capability, gate charge characteristics, and identical package configuration. Substitution becomes necessary when the primary part reaches end-of-life status, inventory constraints occur, or alternative sourcing is required for supply chain optimization.

Substiute Parts

IXTY1R4N100P

IXYSIn Stock: 1094IXTY1R4N100P Datasheet

Current PartRFQ

FQD2N100TM

onsemiIn Stock: 40231FQD2N100TM Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXTY1R4N100P is determined by strict alignment of the following critical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 1000V drain-to-source voltage (Vdss) rating to ensure safe operation in the intended high-voltage application circuit.

Current Capability: The substitute part must support continuous drain current (Id) at or above 1.4A at 25°C to handle the design load requirements without thermal derating.

On-State Resistance (Rds On): The substitute part must maintain comparable on-state resistance characteristics to ensure switching efficiency and thermal performance remain within design specifications.

Gate Charge (Qg): The substitute part must exhibit gate charge values within acceptable range to maintain gate drive circuit compatibility and switching speed performance.

Package Configuration: The substitute part must utilize the identical TO-252AA surface mount package to ensure mechanical and thermal interface compatibility with the printed circuit board layout and thermal management design.

Temperature Range: The substitute part must support the full operating temperature range of -55°C to 150°C (TJ) to maintain performance across all environmental conditions.

Compliance Status: The substitute part must maintain equivalent RoHS3 compliance and REACH unaffected status to satisfy regulatory and supply chain requirements.

The FQD2N100TM from onsemi meets all substitution criteria for the IXTY1R4N100P.

Parameter Comparison

Engineering Selection Recommendations

Primary Part Selection: The IXTY1R4N100P remains the preferred selection when available. This part is currently Active in product status with substantial inventory (1037 pieces) and carries full ROHS3 compliance and REACH unaffected certification.

Substitute Part Selection: The FQD2N100TM from onsemi is a qualified substitute when the IXTY1R4N100P is unavailable. This part maintains identical voltage rating, package configuration, and operating temperature range. The FQD2N100TM demonstrates superior continuous drain current capability (1.6A versus 1.4A) and lower on-state resistance (9 Ohm versus 11 Ohm), resulting in improved thermal performance. Gate charge is reduced (15.5 nC versus 17.8 nC), enabling faster switching characteristics. The substitute part carries equivalent ROHS3 compliance and REACH unaffected status, satisfying all regulatory requirements.

Compliance Verification: Both parts maintain ROHS3 compliance and REACH unaffected status, ensuring compatibility with current environmental and supply chain regulations. Moisture sensitivity level is rated at MSL 1 (Unlimited) for both parts, indicating no special moisture control requirements during storage or handling.

Inventory Considerations: The FQD2N100TM maintains significantly higher inventory availability (40200 pieces) compared to the IXTY1R4N100P (1037 pieces), providing enhanced supply chain security for long-term production requirements.

Frequently Asked Questions (FAQ)

Q: Can the FQD2N100TM directly replace the IXTY1R4N100P in existing circuit designs?

A: Yes. Both parts share identical drain-to-source voltage rating (1000V), identical package configuration (TO-252AA), and identical operating temperature range (-55°C to 150°C). The FQD2N100TM exhibits superior electrical characteristics including higher continuous drain current (1.6A versus 1.4A) and lower on-state resistance (9 Ohm versus 11 Ohm), making it functionally compatible without circuit modification.

Q: What are the key electrical differences between these two parts?

A: The FQD2N100TM provides improved performance across multiple parameters. Continuous drain current is 14% higher (1.6A versus 1.4A). On-state resistance is 18% lower (9 Ohm versus 11 Ohm at comparable test conditions). Gate charge is 13% lower (15.5 nC versus 17.8 nC), enabling faster switching. Input capacitance is slightly higher (520 pF versus 450 pF). These differences result in lower power dissipation and improved thermal efficiency in the substitute part.

Q: Are there any package or mounting differences between these parts?

A: No. Both parts utilize identical Surface Mount TO-252AA packaging (TO-252-3, DPAK with 2 leads plus tab, SC-63 designation). PCB layout, thermal interface design, and mounting procedures remain unchanged between the two parts.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both the IXTY1R4N100P and FQD2N100TM carry ROHS3 compliance and REACH unaffected status. Moisture sensitivity level is MSL 1 (Unlimited) for both parts. ECCN classification is EAR99 for both parts. HTSUS code is 8541.29.0095 for both parts.

Q: What is the gate charge difference and how does it affect circuit performance?

A: The FQD2N100TM exhibits 15.5 nC gate charge versus 17.8 nC for the IXTY1R4N100P. This 2.3 nC reduction (13% lower) enables faster gate charging and discharging cycles, resulting in improved switching speed and reduced gate drive power requirements. This characteristic is beneficial in high-frequency switching applications.

Q: How do the on-state resistance values compare and what is the practical impact?

A: The FQD2N100TM provides 9 Ohm on-state resistance (measured at 800mA, 10V gate voltage) versus 11 Ohm for the IXTY1R4N100P (measured at 500mA, 10V gate voltage). The lower on-state resistance in the substitute part reduces conduction losses and heat generation during switching operation, improving overall circuit efficiency and thermal performance.

Q: Is the higher input capacitance of the FQD2N100TM a concern?

A: The FQD2N100TM exhibits 520 pF input capacitance versus 450 pF for the IXTY1R4N100P, representing a 70 pF increase. This higher capacitance requires slightly more gate drive current during switching transitions but does not prevent direct substitution. Gate drive circuits designed for the IXTY1R4N100P will operate with the FQD2N100TM without modification.

Q: What inventory advantages does the FQD2N100TM provide?

A: The FQD2N100TM maintains 40200 pieces in stock inventory compared to 1037 pieces for the IXTY1R4N100P. This 39-fold inventory advantage provides enhanced supply chain security and reduced lead time risk for production requirements.

Q: Are there any thermal performance differences between these parts?

A: The FQD2N100TM exhibits lower maximum power dissipation (50W at Tc versus 63W at Tc for the IXTY1R4N100P). Combined with lower on-state resistance, the substitute part generates less heat during operation, resulting in improved thermal efficiency and reduced thermal management requirements.