IXTY1N80P N-Channel 800V 1A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTY1N80P is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 1A continuous drain current at 25°C. This device is housed in a TO-252AA surface mount package and is designed for high-voltage switching applications. The part is currently Active in product status with 1080 units in stock.

Equivalent and substitute parts are identified when alternative components meet or exceed the electrical and mechanical specifications of the primary device, enabling design flexibility, supply chain alternatives, and inventory optimization without compromising circuit performance.

Substiute Parts

IXTY1N80P

IXYSIn Stock: 1158IXTY1N80P Datasheet

Current PartRFQ

STD1NK80ZT4

STMicroelectronicsIn Stock: 19524STD1NK80ZT4 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTY1N80P is determined by equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 800V
• Continuous Drain Current (Id): Must equal or exceed 1A at 25°C
• Gate Threshold Voltage (Vgs(th)): Must be within acceptable operating range (4V nominal)
• On-State Resistance (Rds On): Must not significantly exceed 14 Ohm at specified conditions
• Operating Temperature Range: Must support -55°C to 150°C
• Gate Charge (Qg): Lower values indicate improved switching performance

Mechanical Equivalence Criteria:

• Package Type: TO-252-3 DPAK surface mount configuration
• Pin Configuration: 2 Leads + Tab (drain, gate, source)
• Mounting Type: Surface mount compatibility

The STD1NK80ZT4 from STMicroelectronics meets these substitution criteria with equivalent voltage and current ratings, compatible package geometry, and overlapping thermal specifications.

Parameter Comparison

Engineering Selection Recommendations

Both the IXTY1N80P and STD1NK80ZT4 are Active products with full RoHS3 compliance and REACH unaffected status, meeting current regulatory requirements for electronic component manufacturing and use.

IXTY1N80P Selection Basis:

• Lower on-state resistance (14 Ohm vs. 16 Ohm) reduces conduction losses
• Lower gate charge (9 nC vs. 7.7 nC) indicates slightly higher switching losses but established IXYS Polar series performance
• Gate voltage rating of ±20V is suitable for standard gate drive circuits
• Current inventory of 1080 units supports immediate availability

STD1NK80ZT4 Selection Basis:

• Lower gate charge (7.7 nC) provides improved switching efficiency
• Higher power dissipation rating (45W vs. 42W) offers thermal margin
• Extended gate voltage rating (±30V) accommodates wider gate drive specifications
• Lower input capacitance (160 pF vs. 250 pF) reduces gate drive current requirements
• Higher inventory availability (19508 units) supports extended supply chain requirements
• STMicroelectronics SuperMESH™ technology platform

Both devices operate across the identical temperature range (-55°C to 150°C) and share TO-252-3 DPAK surface mount packaging with equivalent pinout configurations.

Frequently Asked Questions (FAQ)

Q: Can the STD1NK80ZT4 directly replace the IXTY1N80P in existing designs?

A: Yes. Both devices share identical voltage (800V) and current (1A) ratings, equivalent operating temperature ranges, and compatible TO-252-3 DPAK surface mount packages with identical pinout. The STD1NK80ZT4 exhibits slightly higher on-state resistance (16 Ohm vs. 14 Ohm) and lower gate charge (7.7 nC vs. 9 nC), which may require thermal and gate drive circuit verification in high-frequency or high-power applications.

Q: What are the key differences between these two devices?

A: The primary differences are on-state resistance (IXTY1N80P: 14 Ohm; STD1NK80ZT4: 16 Ohm), gate charge (IXTY1N80P: 9 nC; STD1NK80ZT4: 7.7 nC), input capacitance (IXTY1N80P: 250 pF; STD1NK80ZT4: 160 pF), and maximum gate voltage rating (IXTY1N80P: ±20V; STD1NK80ZT4: ±30V). Power dissipation ratings differ slightly (42W vs. 45W). These differences reflect different technology platforms (IXYS Polar vs. STMicroelectronics SuperMESH™).

Q: Are both parts RoHS and REACH compliant?

A: Yes. Both the IXTY1N80P and STD1NK80ZT4 are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory standards for electronic components.

Q: What is the significance of the lower gate charge in the STD1NK80ZT4?

A: Lower gate charge (7.7 nC vs. 9 nC) reduces the total charge required to switch the device on and off, resulting in lower gate drive power consumption and potentially faster switching transitions. This is beneficial in high-frequency switching applications.

Q: Are the packages physically identical?

A: Both devices use TO-252-3 DPAK surface mount packages with 2 leads plus tab configuration. The pinout is identical: drain (tab), gate, and source. PCB footprints are compatible.

Q: Which device should be selected for new designs?

A: Selection depends on application requirements. The IXTY1N80P offers lower on-state resistance for reduced conduction losses. The STD1NK80ZT4 offers lower gate charge and input capacitance for improved switching efficiency and wider gate voltage tolerance. Both are Active products with full compliance certifications.

Q: What is the moisture sensitivity level for both parts?

A: Both devices are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling.