IXTY1N80 N-Channel MOSFET 800V 750mA Equivalent & Substitute Parts

Part Overview

The IXTY1N80 is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 750mA continuous drain current at 25°C. The device is housed in a TO-252AA surface mount package and is designed for 40W power dissipation. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain electrical compatibility within the specified voltage, current, and thermal operating parameters while accommodating the same or compatible package footprints.

Substiute Parts

IXTY1N80

IXYSIn Stock: 737IXTY1N80 Datasheet

Current PartRFQ

RFD3055LESM9A

onsemiIn Stock: 29325RFD3055LESM9A Datasheet

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STD1NK80ZT4

STMicroelectronicsIn Stock: 19524STD1NK80ZT4 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTY1N80 is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

• FET Type: N-Channel topology required
• Technology: MOSFET (Metal Oxide) construction
• Drain-to-Source Voltage (Vdss): Minimum 800V rating (equal or greater)
• Continuous Drain Current (Id): Minimum 750mA at 25°C (equal or greater)
• Power Dissipation: Minimum 40W (equal or greater)
• Mounting Type: Surface Mount
• Package Compatibility: TO-252AA / DPAK footprint

Secondary Compatibility Parameters:

• Gate Threshold Voltage (Vgs(th)): Within ±1V of specified value
• On-State Resistance (Rds On): Lower or equal values preferred for thermal performance
• Operating Temperature Range: Minimum -55°C to 150°C overlap required
• Regulatory Compliance: ROHS3 compliance and REACH unaffected status

The substitute parts listed below satisfy these criteria and are suitable for direct replacement in applications where the IXTY1N80 was originally specified.

Parameter Comparison

Engineering Selection Recommendations

STD1NK80ZT4 (STMicroelectronics)

The STD1NK80ZT4 is the primary direct substitute for the IXTY1N80. Both devices share identical voltage ratings (800V Vdss), equivalent gate threshold voltage (4.5V), and compatible operating temperature ranges (-55°C to 150°C). The STD1NK80ZT4 provides superior continuous drain current (1A versus 750mA) and higher power dissipation capability (45W versus 40W), ensuring enhanced thermal headroom. The device is manufactured by STMicroelectronics under the SuperMESH™ series and maintains active product status with full ROHS3 compliance. The DPAK package is mechanically and electrically compatible with the TO-252AA footprint. This substitute is suitable for direct replacement without circuit modification.

RFD3055LESM9A (onsemi)

The RFD3055LESM9A is an alternative substitute with significantly different electrical characteristics. This device operates at 60V Vdss, which is substantially lower than the IXTY1N80 specification. The RFD3055LESM9A is suitable only for applications where the circuit voltage does not exceed 60V and where the higher current capability (11A) and lower on-state resistance (107mOhm) provide performance advantages. This part is not a direct replacement for 800V applications. The device is manufactured by onsemi, maintains active product status, and is ROHS3 compliant. The TO-252AA package is identical to the main part.

Product Status Consideration

Both substitute parts maintain active product status, ensuring long-term availability and supply chain stability. The IXTY1N80 obsolete status necessitates transition to one of these active alternatives for new designs and ongoing production support.

Frequently Asked Questions (FAQ)

Q: Can the STD1NK80ZT4 be used as a direct replacement for the IXTY1N80 in all applications?

A: The STD1NK80ZT4 is electrically and mechanically compatible with the IXTY1N80 for applications operating at 800V or lower. Both devices share the same Vdss rating, equivalent gate threshold voltage, and compatible operating temperature ranges. The STD1NK80ZT4 provides higher current and power dissipation ratings, making it suitable for direct substitution without circuit modification.

Q: Why is the RFD3055LESM9A listed as a substitute if it has a 60V Vdss rating?

A: The RFD3055LESM9A is listed as a substitute for applications where circuit voltage does not exceed 60V. It is not suitable for 800V applications. This part is included in the substitute list for reference in lower-voltage circuit designs where the IXTY1N80 was originally considered but where the RFD3055LESM9A offers superior current handling and lower on-state resistance.

Q: Are the package footprints of these substitutes identical?

A: The STD1NK80ZT4 uses a DPAK package, and the RFD3055LESM9A uses a TO-252AA package. Both packages are mechanically and electrically equivalent, with identical pin configurations and PCB footprints. The TO-252AA and DPAK designations refer to the same physical package format (SC-63).

Q: What is the impact of the different Rds On values between the IXTY1N80 and STD1NK80ZT4?

A: The STD1NK80ZT4 has a higher Rds On value (16 Ohm @ 500mA, 10V) compared to the IXTY1N80 (11 Ohm @ 500mA, 10V). This results in slightly higher on-state power dissipation. However, the STD1NK80ZT4 provides higher power dissipation capability (45W versus 40W), which compensates for this difference and maintains thermal performance within acceptable limits.

Q: Are both substitute parts ROHS3 compliant?

A: Yes, both the STD1NK80ZT4 and RFD3055LESM9A are ROHS3 compliant and REACH unaffected, matching the regulatory status of the IXTY1N80.

Q: What is the operating temperature difference between the main part and substitutes?

A: The IXTY1N80 and STD1NK80ZT4 both operate from -55°C to 150°C. The RFD3055LESM9A extends the upper temperature limit to 175°C, providing additional thermal margin in high-temperature applications.

Q: Can the gate charge difference between these devices affect circuit performance?

A: The gate charge values are similar across all three devices (8.5 nC for IXTY1N80, 7.7 nC for STD1NK80ZT4, and 11.3 nC for RFD3055LESM9A). These differences are within typical design tolerances and do not require circuit modification for gate drive timing or switching frequency adjustments.