IXTY18P10T Equivalent & Substitute Parts

Part Overview

The IXTY18P10T is a P-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage with 18A continuous drain current at 25°C. This device is housed in a TO-252AA surface mount package and is part of the TrenchP™ series. The component is Active in product status and fully RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be achieved within the specified parameter ranges. The IXTY18P10T operates as a P-Channel device; therefore, direct substitution requires matching channel type, voltage rating, current capability, and package form factor.

Substiute Parts

IXTY18P10T

IXYSIn Stock: 664IXTY18P10T Datasheet

Current PartRFQ

STD10NF10T4

STMicroelectronicsIn Stock: 24083STD10NF10T4 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTY18P10T is constrained by the following critical parameters:

Channel Type: The IXTY18P10T is a P-Channel MOSFET. Direct substitutes must maintain P-Channel configuration to preserve circuit polarity and gate drive requirements.

Voltage Rating (Vdss): The 100V rating establishes the maximum drain-to-source voltage the device can withstand. Substitute parts must meet or exceed this specification.

Current Capability (Id): The 18A continuous drain current at 25°C defines the current-handling capacity. Substitutes must support equivalent or higher current ratings to maintain circuit performance.

On-State Resistance (Rds On): The 120 mOhm specification at 9A, 10V determines conduction losses and thermal behavior. Lower Rds On values indicate improved efficiency.

Package Form Factor: The TO-252AA surface mount package (DPAK, SC-63) is mechanically and electrically compatible with devices specified in the same package family.

Compliance Status: RoHS3 compliance and REACH unaffected status are mandatory for equivalent substitution in regulated applications.

Based on the provided input data, the STD10NF10T4 is listed as a substitute part. However, this device is an N-Channel MOSFET, which represents a channel-type mismatch with the P-Channel IXTY18P10T. N-Channel and P-Channel MOSFETs have fundamentally different gate drive polarities and circuit applications. This substitution is not electrically compatible for direct replacement in circuits designed for P-Channel operation.

Parameter Comparison

Engineering Selection Recommendations

Primary Consideration: The IXTY18P10T is an Active product with full RoHS3 compliance and REACH unaffected status. Both certifications are current and applicable for new designs and production environments.

Substitution Feasibility: The STD10NF10T4, while listed in the provided substitute data, exhibits a fundamental channel-type incompatibility. The IXTY18P10T operates as a P-Channel device, whereas the STD10NF10T4 is an N-Channel device. These channel types require opposite gate drive polarities and are not interchangeable in circuit applications.

Compliance Alignment: Both devices maintain RoHS3 compliance and REACH unaffected status, satisfying regulatory requirements for equivalent substitution. However, compliance status alone does not establish electrical compatibility.

Current and Power Ratings: The IXTY18P10T delivers 18A continuous drain current and 83W maximum power dissipation. The STD10NF10T4 provides 13A continuous drain current and 50W maximum power dissipation. These reductions in current and power handling capacity further preclude direct substitution in applications requiring the full performance envelope of the IXTY18P10T.

Package Compatibility: Both devices use the TO-252-3 DPAK surface mount package, establishing mechanical and PCB layout compatibility. However, mechanical compatibility does not override electrical incompatibility.

Frequently Asked Questions (FAQ)

Q: Can the STD10NF10T4 replace the IXTY18P10T in my circuit?

A: No. The STD10NF10T4 is an N-Channel MOSFET, while the IXTY18P10T is a P-Channel MOSFET. These devices have opposite gate drive polarities and cannot be directly substituted. N-Channel and P-Channel MOSFETs serve different circuit roles and require different biasing schemes.

Q: What is the primary difference between P-Channel and N-Channel MOSFETs?

A: P-Channel MOSFETs conduct when the gate voltage is negative relative to the source, while N-Channel MOSFETs conduct when the gate voltage is positive relative to the source. This fundamental difference in gate drive polarity makes them incompatible for direct substitution.

Q: Are the packages compatible between these two devices?

A: Yes. Both the IXTY18P10T and STD10NF10T4 use the TO-252-3 DPAK surface mount package. This means they have identical PCB footprints and can be mounted using the same assembly process. However, package compatibility does not establish electrical compatibility.

Q: What parameters must match for a valid MOSFET substitution?

A: Valid substitution requires matching channel type (P-Channel or N-Channel), drain-to-source voltage rating (Vdss), continuous drain current capability (Id), on-state resistance (Rds On), and package form factor. Compliance certifications such as RoHS and REACH status must also align.

Q: Why is the current rating different between these two devices?

A: The IXTY18P10T is rated for 18A continuous drain current, while the STD10NF10T4 is rated for 13A. This difference reflects different semiconductor designs and thermal characteristics. The lower current rating of the STD10NF10T4 makes it unsuitable for applications requiring the full 18A capability of the IXTY18P10T.

Q: Are both devices RoHS3 compliant?

A: Yes. Both the IXTY18P10T and STD10NF10T4 are RoHS3 compliant and REACH unaffected. This ensures compliance with environmental and regulatory requirements in applicable markets.

Q: What is the significance of the Rds On specification?

A: Rds On (on-state resistance) determines the voltage drop across the MOSFET when conducting current. Lower Rds On values result in reduced conduction losses and lower heat generation. The IXTY18P10T specifies 120 mOhm at 9A, 10V, while the STD10NF10T4 specifies 130 mOhm at 5A, 10V. These specifications are measured at different current levels and cannot be directly compared.

Q: Can I use the STD10NF10T4 in a complementary circuit design?

A: The STD10NF10T4 may be used in circuit topologies that require N-Channel MOSFETs, such as complementary push-pull stages paired with P-Channel devices. However, this represents a different circuit application, not a direct substitution of the IXTY18P10T.