IXTV30N60P N-Channel MOSFET 600V 30A Equivalent & Substitute Parts

Part Overview

The IXTV30N60P is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage with 30A continuous drain current at 25°C. This device is packaged in a PLUS220 (TO-220-3 Short Tab) through-hole configuration and is designed for high-voltage switching applications requiring robust power dissipation up to 540W.

The IXTV30N60P is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

IXTV30N60P
IXYSIn Stock: 996IXTV30N60P Datasheet
IXTV30N60P
Current Part
STP18N60M2
STMicroelectronicsIn Stock: 2287STP18N60M2 Datasheet
STP18N60M2
Similar

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 30 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 240 mOhm @ 15A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 5 V @ 250µA
Gate Charge (Qg Max) @ Vgs 82 nC @ 10V
Power Dissipation (Max) 540 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-220-3, Short Tab
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the IXTV30N60P is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 600V Vdss rating to ensure safe operation within the same voltage domain.

Current Handling Capability: The substitute part must support continuous drain current sufficient for the application. The IXTV30N60P delivers 30A; substitute parts with lower current ratings require circuit-level evaluation to confirm adequacy.

On-State Resistance (Rds On): This parameter directly affects power dissipation and thermal performance. Substitute parts with higher Rds On values will generate increased heat and may require thermal management adjustments.

Gate Charge (Qg): Lower gate charge values reduce switching losses and driver circuit stress, representing an improvement in substitute parts.

Package and Mounting: The substitute part must be compatible with the through-hole mounting footprint and thermal requirements of the original design.

Product Status and Compliance: Active substitute parts with current manufacturing status and compliance certifications (RoHS, REACH) are preferred for long-term supply assurance.

Parameter Comparison

Parameter IXTV30N60P (Main Part) STP18N60M2 (Substitute) Compatibility Notes
Manufacturer IXYS STMicroelectronics Different manufacturer; both established semiconductor suppliers
Drain-to-Source Voltage (Vdss) 600 V 600 V Matched voltage rating
Continuous Drain Current (Id) @ 25°C 30 A (Tc) 13 A (Tc) Substitute has lower current rating; requires application verification
On-State Resistance (Rds On Max) @ Id, Vgs 240 mOhm @ 15A, 10V 280 mOhm @ 6.5A, 10V Substitute has higher Rds On; increased power dissipation at equivalent current levels
Gate Threshold Voltage (Vgs(th) Max) @ Id 5 V @ 250µA 4 V @ 250µA Substitute has lower threshold; improved gate drive margin
Gate Charge (Qg Max) @ Vgs 82 nC @ 10V 21.5 nC @ 10V Substitute has significantly lower gate charge; reduced switching losses
Power Dissipation (Max) 540 W (Tc) 110 W (Tc) Substitute has lower power dissipation rating; thermal design must be verified
Operating Temperature Range -55 to 150 °C (TJ) -55 to 150 °C (TJ) Matched operating temperature range
Package Type TO-220-3, Short Tab (PLUS220) TO-220-3 Both through-hole TO-220-3 packages; footprint compatible
Mounting Type Through Hole Through Hole Matched mounting type
Product Status Obsolete Active Substitute is in active production; supports long-term availability
RoHS Status Not specified ROHS3 Compliant Substitute meets current environmental compliance standards
REACH Status REACH Unaffected REACH Unaffected Both parts comply with REACH regulations

Engineering Selection Recommendations

Primary Consideration: Current Rating Differential

The STP18N60M2 substitute part is rated for 13A continuous drain current, compared to the IXTV30N60P's 30A rating. This represents a 57% reduction in current capacity. Selection of this substitute is contingent upon the application's actual current requirements. Applications operating at or below 13A continuous current are suitable for direct substitution. Applications requiring sustained currents between 13A and 30A require detailed thermal and circuit analysis to confirm adequate performance margins.

Voltage Rating Alignment

Both parts maintain identical 600V Vdss ratings, ensuring compatibility within the same voltage domain without circuit modification.

Thermal Performance

The STP18N60M2 is rated for 110W maximum power dissipation compared to the IXTV30N60P's 540W. The substitute part's lower power dissipation rating reflects its lower current capacity. Thermal design verification is required to ensure the substitute part's thermal characteristics are adequate for the specific application environment and duty cycle.

Gate Drive Characteristics

The STP18N60M2 exhibits lower gate charge (21.5 nC versus 82 nC) and lower gate threshold voltage (4V versus 5V), representing improvements in gate drive efficiency and switching performance. Existing gate driver circuits designed for the IXTV30N60P will operate effectively with the STP18N60M2 without modification.

Product Status and Supply Chain

The STP18N60M2 is classified as active production status with RoHS3 compliance certification, providing assurance of long-term availability and environmental regulatory alignment. The IXTV30N60P's obsolete status necessitates transition to an active substitute part for sustained production support.

Package Compatibility

Both parts utilize through-hole TO-220-3 packaging with identical mounting footprints, enabling direct mechanical substitution without PCB redesign.

Frequently Asked Questions (FAQ)

Q: Can the STP18N60M2 directly replace the IXTV30N60P in all applications?

A: Direct replacement is possible only in applications where the continuous drain current requirement does not exceed 13A. The STP18N60M2's 13A rating is 57% lower than the IXTV30N60P's 30A rating. Applications operating at higher sustained currents require circuit-level analysis to confirm adequate performance margins and thermal management.

Q: What is the impact of the higher on-state resistance in the STP18N60M2?

A: The STP18N60M2 exhibits 280 mOhm Rds On (measured at 6.5A, 10V) compared to the IXTV30N60P's 240 mOhm (measured at 15A, 10V). At equivalent current levels, the higher Rds On in the substitute part results in increased power dissipation and heat generation. Thermal design must account for this difference to maintain safe operating temperatures.

Q: Are the gate drive requirements different between these two parts?

A: Gate drive requirements are compatible. The STP18N60M2 has a lower gate threshold voltage (4V versus 5V) and significantly lower gate charge (21.5 nC versus 82 nC). Existing gate driver circuits designed for the IXTV30N60P will operate effectively with the STP18N60M2, with the benefit of reduced switching losses in the substitute part.

Q: Is the TO-220-3 package footprint identical between both parts?

A: Yes. Both the IXTV30N60P (PLUS220 variant) and the STP18N60M2 utilize TO-220-3 through-hole packaging with identical pin configurations and mounting footprints. No PCB modification is required for mechanical substitution.

Q: What compliance certifications does the STP18N60M2 carry?

A: The STP18N60M2 is RoHS3 compliant and REACH unaffected. Both parts carry EAR99 export classification and identical HTSUS codes (8541.29.0095), confirming regulatory alignment for environmental and trade compliance.

Q: Why is the STP18N60M2's power dissipation rating significantly lower?

A: The STP18N60M2's 110W maximum power dissipation rating reflects its lower continuous current capacity (13A versus 30A). Power dissipation is a function of current and on-state resistance; the substitute part's lower current rating directly results in a lower absolute power dissipation ceiling. This does not indicate inferior thermal design, but rather reflects the part's intended current operating range.

Q: Can the STP18N60M2 be used in high-current applications by operating it at reduced duty cycle?

A: Duty cycle reduction may allow operation in higher-current applications, but this requires detailed thermal analysis. Peak current handling capability and thermal time constants must be evaluated against the specific application's switching frequency and thermal environment. Sustained operation above the part's continuous current rating is not recommended without comprehensive thermal modeling.

Q: What is the inventory status of these parts?

A: The IXTV30N60P has 985 pieces in stock (new original). The STP18N60M2 has 2260 pieces in stock (new original, tube packaging). The substitute part's higher inventory level and active production status support long-term supply continuity.

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