IXTV26N60P N-Channel 600V 26A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTV26N60P is an N-Channel 600V 26A power MOSFET manufactured by IXYS in the PolarHV™ series, housed in a TO-220-3 Short Tab through-hole package. This device is rated for 460W maximum power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently classified as obsolete, making identification of functionally equivalent alternatives essential for design continuity, maintenance, and new production applications where the original component is no longer available from primary sources.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	26	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	270	mOhm @ 500mA, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	4150	pF @ 25V
Power Dissipation (Max)	460	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3, Short Tab	—

Substitute Part Grouping Explanation

Substitution of the IXTV26N60P is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 600V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Mounting Type: Must be Through Hole
Package / Case: Must be TO-220-3 or compatible TO-220 variant

Secondary Compatibility Parameters:

Continuous Drain Current (Id) @ 25°C: Substitute must meet or exceed application current requirements
Rds On (Max) @ 10V: Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Operating Temperature Range: Must encompass -55°C to 150°C
Power Dissipation (Max): Must support thermal requirements of the application

The substitute parts listed below satisfy the primary criteria. Differences in secondary parameters reflect design trade-offs between current capacity, on-resistance, gate charge, and power dissipation across different manufacturer technologies and product series.

Parameter Comparison

Parameter	IXTV26N60P (Main)	FCP260N60E	IPP60R280C6XKSA1	IPP60R280E6XKSA1	SPP15N60C3XKSA1	STP18N60M2	STP18NM60N	STP22NM60N
Manufacturer	IXYS	Fairchild Semiconductor	Infineon Technologies	Infineon Technologies	Infineon Technologies	STMicroelectronics	STMicroelectronics	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	600	600	600	600	650	600	600	600
Id @ 25°C (A)	26	15	13.8	13.8	15	13	13	16
Rds On (Max) @ 10V (mOhm)	270 @ 500mA	260 @ 7.5A	280 @ 6.5A	280 @ 6.5A	280 @ 9.4A	280 @ 6.5A	285 @ 6.5A	220 @ 8A
Vgs(th) (Max) @ Id (V)	5 @ 250µA	3.5 @ 250µA	3.5 @ 430µA	3.5 @ 430µA	3.9 @ 675µA	4 @ 250µA	4 @ 250µA	4 @ 100µA
Gate Charge Qg (Max) @ 10V (nC)	72	62	43	43	63	21.5	35	44
Vgs (Max) (V)	±30	±20	±20	±20	±20	±25	±25	±30
Ciss (Max) @ Vds (pF)	4150 @ 25V	2500 @ 25V	950 @ 100V	950 @ 100V	1660 @ 25V	791 @ 100V	1000 @ 50V	1300 @ 50V
Power Dissipation (Max) (W)	460	156	104	104	156	110	110	125
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package / Case	TO-220-3, Short Tab	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Last Time Buy	Obsolete	Active	Active	Active	Active
RoHS Status	Not specified	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Active Product Status Substitutes:

The following parts are classified as Active and represent the most suitable long-term substitutes for new designs and ongoing production:

FCP260N60E (Fairchild Semiconductor): Active status with 15A continuous drain current and 156W power dissipation. Suitable for applications where the IXTV26N60P's 26A rating is not fully utilized. Rds On of 260 mOhm at 10V provides efficient switching characteristics.
SPP15N60C3XKSA1 (Infineon Technologies, CoolMOS™ series): Active status with 15A continuous drain current and 650V Vdss rating. Offers superior gate charge performance (63 nC) and ROHS3 compliance. The elevated voltage rating provides additional design margin.
STP18N60M2 (STMicroelectronics, MDmesh™ II Plus series): Active status with 13A continuous drain current and 110W power dissipation. Delivers the lowest gate charge (21.5 nC) among all substitutes, reducing switching losses and driver requirements. ROHS3 compliant.
STP18NM60N (STMicroelectronics, MDmesh™ II series): Active status with 13A continuous drain current and 110W power dissipation. Provides 35 nC gate charge with high inventory availability (24,200 units). ROHS3 compliant.
STP22NM60N (STMicroelectronics, MDmesh™ II series): Active status with 16A continuous drain current and 125W power dissipation. Offers the lowest on-resistance (220 mOhm at 8A) among all substitutes, enabling reduced conduction losses. ROHS3 compliant with ±30V maximum gate voltage matching the original part.

Last Time Buy Status:

IPP60R280C6XKSA1 (Infineon Technologies, CoolMOS™ series): Last Time Buy status with 13.8A continuous drain current. Provides excellent gate charge performance (43 nC) and ROHS3 compliance. Suitable for applications where extended supply availability is not critical.

Obsolete Status (Not Recommended for New Designs):

IPP60R280E6XKSA1 (Infineon Technologies, CoolMOS™ series): Obsolete status. Electrically equivalent to IPP60R280C6XKSA1 but no longer in active production. Use only for legacy system maintenance.

Frequently Asked Questions (FAQ)

Q: Can I directly replace the IXTV26N60P with any of these substitute parts?

A: Direct mechanical replacement is possible for all listed substitutes due to identical TO-220-3 through-hole packaging. However, electrical performance differs significantly. The IXTV26N60P is rated for 26A continuous drain current, while most substitutes are rated between 13A and 16A. Applications requiring the full 26A rating must use STP22NM60N (16A maximum) or verify that actual operating current is within the substitute's rating. All substitutes meet the 600V Vdss requirement and -55°C to 150°C operating temperature range.

Q: What is the primary difference between these substitute parts?

A: The main trade-offs are continuous drain current capacity, on-resistance, gate charge, and power dissipation. The IXTV26N60P provides 26A at 270 mOhm, while STP22NM60N offers 16A at 220 mOhm (lower on-resistance but lower current). STP18N60M2 provides the lowest gate charge (21.5 nC), reducing switching losses and driver power requirements. IPP60R280C6XKSA1 and IPP60R280E6XKSA1 offer the lowest gate charge among Infineon options (43 nC) but are limited to 13.8A.

Q: Which substitute is best for new designs?

A: For new designs, prioritize Active status parts: FCP260N60E, SPP15N60C3XKSA1, STP18N60M2, STP18NM60N, or STP22NM60N. STP22NM60N is recommended when current capacity closest to the original part is required (16A vs. 26A). STP18N60M2 is recommended when minimizing switching losses is critical due to its 21.5 nC gate charge. All Active status parts are ROHS3 compliant.

Q: Are there thermal considerations when substituting?

A: Yes. The IXTV26N60P is rated for 460W maximum power dissipation. Substitute parts have lower ratings: FCP260N60E and SPP15N60C3XKSA1 (156W), STP18N60M2 and STP18NM60N (110W), STP22NM60N (125W), and IPP60R280 variants (104W). Verify that the application's actual power dissipation (calculated as I²R + switching losses) does not exceed the substitute's rating. Lower current ratings may require thermal design review.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge determines the energy required to switch the MOSFET on and off. The IXTV26N60P requires 72 nC, while STP18N60M2 requires only 21.5 nC. Lower gate charge reduces driver power consumption and enables faster switching. If the existing gate driver is current-limited, a substitute with lower gate charge (such as STP18N60M2 at 21.5 nC or IPP60R280 variants at 43 nC) may improve performance. Conversely, if the driver is oversized, gate charge differences are less critical.

Q: Can I use SPP15N60C3XKSA1 in a 600V application?

A: Yes. SPP15N60C3XKSA1 is rated for 650V Vdss, which exceeds the 600V requirement. The higher voltage rating provides additional design margin and does not degrade performance in 600V applications. This part is suitable for designs requiring enhanced voltage headroom.

Q: What does "Last Time Buy" status mean for IPP60R280C6XKSA1?

A: Last Time Buy indicates that Infineon has announced end-of-life for this part. Existing inventory may be available, but no new production is planned. This part is suitable for immediate replacement needs but not recommended for designs with long production lifecycles. Use Active status parts (FCP260N60E, SPP15N60C3XKSA1, STP18N60M2, STP18NM60N, STP22NM60N) for designs requiring extended availability.

Q: How do I verify compatibility with my existing circuit?

A: Verify the following: (1) Continuous drain current requirement does not exceed the substitute's Id rating; (2) Maximum gate voltage does not exceed ±20V for Infineon and Fairchild parts, or ±25V to ±30V for STMicroelectronics parts; (3) Thermal design accommodates the substitute's lower power dissipation rating if applicable; (4) Gate driver can supply the required gate charge within specified rise/fall times; (5) PCB layout and thermal management remain unchanged due to identical TO-220-3 packaging.

Q: Are all substitutes ROHS3 compliant?

A: All listed substitutes are ROHS3 compliant except the main part (IXTV26N60P), for which RoHS status is not specified. All substitutes carry REACH Unaffected status and EAR99 export classification, matching the original part's regulatory profile.

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