IXTV22N60P N-Channel 600V 22A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTV22N60P is an N-Channel 600V 22A MOSFET manufactured by IXYS in the PolarHV™ series, housed in a PLUS220 through-hole package. This device is rated for 400W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing system support and new design considerations.

Substitute parts are required when the IXTV22N60P reaches end-of-life status or when inventory becomes unavailable. Equivalent devices must maintain compatibility across critical electrical parameters including drain-source voltage rating, continuous drain current capability, on-resistance characteristics, and gate charge specifications.

Key Parameters

Parameter	IXTV22N60P Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	22	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	350 mOhm @ 11A, 10V	—
Gate Charge (Qg) @ Vgs	62	nC @ 10V
Power Dissipation (Max)	400	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3, Short Tab	—

Substitute Part Grouping Explanation

Substitution of the IXTV22N60P is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must support the application's current requirements
Drive Voltage: Must operate at 10V gate drive
On-Resistance (Rds On): Must not exceed specifications at rated current and gate voltage
Gate Charge (Qg): Lower values indicate faster switching characteristics
Power Dissipation: Must accommodate thermal requirements
Operating Temperature: Must span -55°C to 150°C
Mounting Type: Through-hole configuration required
Package Compatibility: TO-220-3 or equivalent footprint

Substitution Logic: The IXTV22N60P operates at 22A continuous drain current with 600V Vdss rating. Substitute parts are grouped into two categories:

Direct Current-Rated Substitutes (17A–22A range): Parts maintaining similar current handling and power dissipation characteristics, suitable for applications requiring minimal design modification.
Lower Current Substitutes (10A–12A range): Parts with reduced current ratings but equivalent voltage and thermal characteristics, applicable to designs with reduced current demands or where thermal management is enhanced.

All substitute parts maintain the 600V Vdss rating, through-hole mounting, and TO-220-3 package compatibility. Gate charge and on-resistance values are provided to enable switching performance assessment.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Package	Status
IXTV22N60P	IXYS	600	22	350 @ 11A, 10V	62 @ 10V	400	TO-220-3, Short Tab	Obsolete
FDPF17N60NT	onsemi	600	17	340 @ 8.5A, 10V	65 @ 10V	62.5	TO-220-3 Full Pack	Active
SIHA12N60E-E3	Vishay Siliconix	600	12	380 @ 6A, 10V	58 @ 10V	33	TO-220-3 Full Pack	Active
STP13N60M2	STMicroelectronics	600	11	380 @ 5.5A, 10V	17 @ 10V	110	TO-220-3	Active
STP13NM60ND	STMicroelectronics	600	11	380 @ 5.5A, 10V	24.5 @ 10V	109	TO-220-3	Active
FCP11N60	onsemi	600	11	380 @ 5.5A, 10V	52 @ 10V	125	TO-220-3	Not For New Designs
FCP380N60E	Fairchild Semiconductor	600	10.2	380 @ 5A, 10V	45 @ 10V	106	TO-220-3	Active
AOT11S60L	Alpha & Omega Semiconductor Inc.	600	11	399 @ 3.8A, 10V	11 @ 10V	178	TO-220-3	Not For New Designs
SPP11N60C3XKSA1	Infineon Technologies	650	11	380 @ 7A, 10V	60 @ 10V	125	TO-220-3	Active

Engineering Selection Recommendations

For Direct Current Replacement (17A–22A Applications):

The FDPF17N60NT (onsemi, UniFET™ series) is the primary substitute for applications requiring sustained current levels near the IXTV22N60P rating. This part maintains 600V Vdss, delivers 17A continuous drain current, and exhibits comparable on-resistance (340 mOhm vs. 350 mOhm). The device is actively manufactured and RoHS3 compliant. Gate charge of 65 nC is marginally higher than the original part, resulting in slightly increased switching losses. Power dissipation is significantly lower (62.5W vs. 400W), indicating enhanced thermal efficiency. This part is suitable for designs where the original 22A rating can be reduced to 17A without system performance degradation.

For Lower Current Applications (10A–12A Range):

Multiple active alternatives exist for applications operating below 15A continuous current:

SIHA12N60E-E3 (Vishay Siliconix): Rated for 12A continuous current with 380 mOhm on-resistance. RoHS3 compliant and actively produced. Gate charge of 58 nC provides efficient switching. Suitable for designs with moderate current requirements and enhanced thermal management.
STP13N60M2 (STMicroelectronics, MDmesh™ II Plus): Delivers 11A continuous current with exceptionally low gate charge (17 nC), enabling rapid switching transitions. RoHS3 compliant and actively manufactured. Recommended for applications prioritizing switching speed and efficiency.
STP13NM60ND (STMicroelectronics, FDmesh™ II): Rated for 11A continuous current with moderate gate charge (24.5 nC). RoHS3 compliant and actively produced. Provides balanced switching and conduction characteristics.
FCP380N60E (Fairchild Semiconductor, SuperFET® II): Rated for 10.2A continuous current with 380 mOhm on-resistance. Actively manufactured. Suitable for applications with reduced current demands.

For Voltage-Rated Substitution (650V Applications):

The SPP11N60C3XKSA1 (Infineon Technologies, CoolMOS™ series) provides 650V Vdss rating, exceeding the original 600V specification. Rated for 11A continuous current with 380 mOhm on-resistance. RoHS3 compliant and actively produced. This part is applicable to designs requiring enhanced voltage margin or operating in higher-voltage environments.

Product Status Considerations:

Parts marked "Active" are recommended for new designs and ongoing production. Parts marked "Not For New Designs" (FCP11N60, AOT11S60L) are suitable only for legacy system support and should not be selected for new development. The IXTV22N60P is obsolete and should be replaced in all new designs.

Frequently Asked Questions (FAQ)

Q: Can the IXTV22N60P be directly replaced with a lower-current rated part such as the STP13N60M2 (11A)?

A: Direct replacement depends on application current requirements. If the system operates at or below 11A continuous current, the STP13N60M2 is electrically compatible. The 600V Vdss rating, 10V gate drive, and TO-220-3 package are identical. However, if the original design requires the full 22A capability, a lower-rated part will not function adequately. System current profile analysis is required before substitution.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (e.g., STP13N60M2 at 17 nC) results in faster switching transitions and reduced switching losses, improving efficiency. Higher gate charge (e.g., FDPF17N60NT at 65 nC) requires more energy to switch but may provide improved noise immunity. Selection depends on the gate driver circuit capability and switching frequency requirements.

Q: Are all substitute parts compatible with the original PLUS220 package footprint?

A: No. The IXTV22N60P uses a PLUS220 package with short tab configuration. Most substitute parts use standard TO-220-3 or TO-220-3 Full Pack packages. While pin assignments are identical (Gate, Drain, Source), mechanical dimensions and mounting hole spacing may differ. PCB layout verification is required before substitution. The FDPF17N60NT uses a TO-220F-3 (full pack) variant, which has different mechanical dimensions than the short-tab original.

Q: Which substitute part offers the best thermal performance?

A: The FDPF17N60NT exhibits the lowest power dissipation rating (62.5W) among 17A-rated alternatives, indicating superior thermal efficiency. For lower-current applications, the SIHA12N60E-E3 (33W) provides the best thermal characteristics. However, power dissipation ratings reflect maximum device capability under specific test conditions. Actual thermal performance depends on junction temperature, case temperature, and thermal interface materials in the application.

Q: Can substitute parts with higher Vdss ratings (e.g., SPP11N60C3XKSA1 at 650V) be used in 600V applications?

A: Yes. A higher Vdss rating provides additional voltage margin and is electrically compatible with 600V applications. The SPP11N60C3XKSA1 (650V, 11A) can be substituted in any circuit designed for the IXTV22N60P (600V, 22A) where current requirements do not exceed 11A. The higher voltage rating does not degrade performance in lower-voltage applications.

Q: What is the difference between "Not For New Designs" and "Active" product status?

A: "Active" parts are currently manufactured and recommended for new product development. "Not For New Designs" parts are in production but designated for legacy system support only. These parts may have limited availability, extended lead times, or planned discontinuation. For new designs, only "Active" status parts should be selected. The IXTV22N60P is "Obsolete," indicating production has ceased and no new inventory is being manufactured.

Q: How do on-resistance (Rds On) variations affect circuit performance?

A: On-resistance determines conduction losses and heat generation during operation. The IXTV22N60P specifies 350 mOhm at 11A and 10V gate drive. Most substitute parts specify 380–399 mOhm at comparable conditions. Higher on-resistance increases power dissipation and heat generation. For high-frequency switching applications or designs with tight thermal budgets, lower on-resistance values (e.g., FDPF17N60NT at 340 mOhm) are preferred. For low-frequency or low-duty-cycle applications, on-resistance differences have minimal impact.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed are RoHS3 compliant except where not applicable (e.g., FCP11N60, FCP380N60 do not specify RoHS status in provided data). RoHS3 compliance ensures absence of restricted substances (lead, cadmium, mercury, hexavalent chromium, PBBs, PBDEs) and is required for most commercial and industrial applications. Verify RoHS status with the manufacturer if compliance is a system requirement.

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