IXTV18N60P N-Channel 600V 18A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTV18N60P is an N-Channel 600V 18A MOSFET manufactured by IXYS in the PolarHV™ series, housed in a PLUS220 package (TO-220-3 Short Tab). This device is rated for 360W maximum power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXTV18N60P

IXYSIn Stock: 1006IXTV18N60P Datasheet

Current PartRFQ

STP13N60M2

STMicroelectronicsIn Stock: 1425STP13N60M2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTV18N60P is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 600V minimum required
• FET Type: N-Channel topology
• Mounting Type: Through Hole configuration
• Package Compatibility: TO-220 family packages

Performance Consideration Parameters:

• Continuous Drain Current (Id): Substitute must support the application's current requirements
• On-State Resistance (Rds On): Lower values indicate improved efficiency
• Gate Charge (Qg): Affects switching speed and drive circuit requirements
• Power Dissipation Rating: Must accommodate thermal load

The STP13N60M2 substitute meets the critical voltage, channel type, and mounting requirements. However, the continuous drain current rating differs (11A versus 18A), requiring circuit-level evaluation to confirm suitability for the specific application.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The IXTV18N60P is classified as obsolete, while the STP13N60M2 is active and in production. Active product status ensures ongoing availability, supply chain stability, and manufacturer support.

Compliance and Certifications: Both parts maintain REACH Unaffected status and carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, confirming regulatory equivalence for export and trade purposes.

Current Rating Differential: The primary distinction between these devices is the continuous drain current specification: IXTV18N60P rated at 18A versus STP13N60M2 rated at 11A. Selection of the STP13N60M2 is appropriate only when the application's maximum sustained drain current does not exceed 11A at 25°C. Applications requiring the full 18A rating of the original part require alternative solutions outside this substitute pairing.

Thermal Performance: The IXTV18N60P dissipates 360W maximum, while the STP13N60M2 dissipates 110W maximum. Thermal design margins must account for this reduction in power handling capability.

Gate Charge and Switching Characteristics: The STP13N60M2 exhibits significantly lower gate charge (17 nC versus 49 nC), resulting in faster switching transitions and reduced drive circuit power consumption. This represents an improvement in switching performance characteristics.

Frequently Asked Questions (FAQ)

Q: Can the STP13N60M2 directly replace the IXTV18N60P in all applications?

A: Direct replacement is limited by current rating. The STP13N60M2 is suitable only for applications where continuous drain current does not exceed 11A. Applications requiring the full 18A rating of the IXTV18N60P require alternative parts or circuit redesign.

Q: Are the TO-220-3 packages mechanically interchangeable?

A: Both devices use TO-220-3 through-hole packages and are mechanically compatible for PCB mounting. The IXTV18N60P uses a short tab variant, while the STP13N60M2 uses standard TO-220-3. Pin configuration and lead spacing are identical, permitting direct physical substitution.

Q: What impact does the lower gate charge of the STP13N60M2 have on circuit design?

A: Lower gate charge (17 nC versus 49 nC) reduces the charge that must be supplied by the gate drive circuit, enabling faster switching transitions and lower drive circuit power dissipation. Existing gate drive circuits designed for the IXTV18N60P will operate with improved performance characteristics when driving the STP13N60M2.

Q: Is the STP13N60M2 suitable for high-temperature applications?

A: Both devices operate across the identical temperature range of -55°C to 150°C (TJ). Temperature performance is equivalent between the two parts.

Q: What are the supply chain implications of using the STP13N60M2?

A: The STP13N60M2 is an active product with 1376 units in current inventory, compared to the obsolete IXTV18N60P. Active product status ensures long-term availability and supply continuity.

Q: How do the on-state resistance specifications compare?

A: The IXTV18N60P specifies 420 mOhm at 9A and 10V gate voltage, while the STP13N60M2 specifies 380 mOhm at 5.5A and 10V gate voltage. Direct comparison is limited by different measurement conditions; however, the STP13N60M2 demonstrates lower on-state resistance at its rated current level, indicating improved conduction efficiency within its current rating.