IXTT75N10 Equivalent & Substitute Parts

Part Overview

The IXTT75N10 is an N-Channel MOSFET rated for 100V drain-to-source voltage with 75A continuous drain current at 25°C. This device is housed in a TO-268AA surface mount package and is part of the MegaMOS™ series. The IXTT75N10 is designated as Last Time Buy, indicating that the original manufacturer has discontinued or will discontinue production. Identifying equivalent and substitute parts is necessary to ensure design continuity and maintain supply chain reliability for applications currently utilizing this component.

Substiute Parts

IXTT75N10

IXYSIn Stock: 1064IXTT75N10 Datasheet

Current PartRFQ

IXTT110N10P

IXYSIn Stock: 926IXTT110N10P Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTT75N10 is determined by strict electrical and mechanical compatibility criteria. The following parameters establish the substitution basis:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): Must equal or exceed 100V
• Package Type: Must be TO-268AA surface mount configuration
• FET Type: Must be N-Channel MOSFET technology
• Mounting Type: Must be surface mount

Performance Parameters (Allowable Variance):

• Continuous Drain Current (Id): Substitute must meet or exceed 75A at 25°C
• Power Dissipation: Substitute must meet or exceed 300W
• Operating Temperature Range: Substitute must cover the required application temperature window
• On-Resistance (Rds On): Lower values are acceptable and represent improved performance
• Gate Charge (Qg): Lower values are acceptable and represent improved switching characteristics

The IXTT110N10P qualifies as a substitute because it maintains identical voltage rating (100V Vdss), identical package configuration (TO-268AA), and exceeds the current and power dissipation requirements of the original part while maintaining N-Channel MOSFET technology.

Parameter Comparison

Engineering Selection Recommendations

The IXTT110N10P is a direct substitute for the IXTT75N10 based on the following engineering criteria:

Electrical Compatibility: Both devices share identical drain-to-source voltage ratings (100V) and drive voltage specifications (10V). The IXTT110N10P provides higher continuous drain current (110A versus 75A) and greater power dissipation capability (480W versus 300W), making it suitable for applications requiring equal or greater current handling.

Package and Mounting Compatibility: Both parts utilize the TO-268AA surface mount package configuration, ensuring mechanical and thermal compatibility with existing PCB layouts and thermal management solutions.

Regulatory and Compliance Status: Both the IXTT75N10 and IXTT110N10P are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. The IXTT110N10P maintains active product status, ensuring continued availability and supply chain support.

Performance Advantages: The IXTT110N10P demonstrates improved switching characteristics with lower gate charge (110 nC versus 260 nC) and reduced input capacitance (3550 pF versus 4500 pF), resulting in faster switching transitions and reduced drive circuit stress. The extended operating temperature range (-55°C to 175°C versus -55°C to 150°C) provides additional thermal margin for high-temperature applications.

Frequently Asked Questions (FAQ)

Q: Can the IXTT110N10P be used as a direct replacement for the IXTT75N10 in existing designs?

A: Yes. Both devices share identical voltage ratings (100V Vdss), identical drive voltage specifications (10V), and identical TO-268AA package configurations. The IXTT110N10P exceeds the current and power dissipation specifications of the original part, making it electrically and mechanically compatible for direct substitution.

Q: What are the key differences between the IXTT75N10 and IXTT110N10P?

A: The primary differences are continuous drain current (75A versus 110A), power dissipation capability (300W versus 480W), gate charge (260 nC versus 110 nC), and operating temperature range (-55°C to 150°C versus -55°C to 175°C). The IXTT110N10P also exhibits lower on-resistance and input capacitance, providing improved switching performance.

Q: Are there any thermal management considerations when substituting the IXTT110N10P for the IXTT75N10?

A: Both devices use the same TO-268AA package with identical thermal interface characteristics. Existing thermal management solutions designed for the IXTT75N10 remain valid for the IXTT110N10P. The higher power dissipation capability of the IXTT110N10P does not require enhanced cooling; it simply provides additional thermal margin.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both the IXTT75N10 and IXTT110N10P are ROHS3 compliant and REACH unaffected. Both carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Q: What is the significance of the IXTT75N10 being designated as Last Time Buy?

A: Last Time Buy status indicates that the manufacturer has ceased or will cease production of the IXTT75N10. The IXTT110N10P, which maintains active product status, ensures continued component availability and supply chain reliability for new designs and production continuity.

Q: Will the lower gate charge of the IXTT110N10P affect circuit design?

A: Lower gate charge (110 nC versus 260 nC) reduces the charge that must be supplied by the gate drive circuit, resulting in faster switching transitions and reduced drive circuit power consumption. Existing gate drive circuits designed for the IXTT75N10 will operate with improved performance characteristics when driving the IXTT110N10P.

Q: Are the packaging and pinout configurations identical between these devices?

A: Yes. Both devices use the TO-268AA package configuration with identical pinout and mechanical dimensions. No PCB layout modifications are required for substitution.