IXTT50P085 P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTT50P085 is a P-Channel MOSFET manufactured by IXYS, rated for 85V drain-to-source voltage with 50A continuous drain current at 25°C. This device is housed in a TO-268AA surface mount package and dissipates up to 300W at the case temperature. The part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance.

Substitute parts are selected based on matching or exceeding the electrical and mechanical specifications of the original component while maintaining compatibility with the TO-268AA package footprint and surface mount assembly process.

Substiute Parts

IXTT50P085

IXYSIn Stock: 1073IXTT50P085 Datasheet

Current PartRFQ

IXTT50P10

IXYSIn Stock: 815IXTT50P10 Datasheet

DirectRFQ

IXTT90P10P

IXYSIn Stock: 1648IXTT90P10P Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXTT50P085 is determined by the following criteria:

Mandatory Compatibility Parameters:

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Package: TO-268AA surface mount
• Mounting Type: Surface mount

Electrical Performance Parameters:

• Drain-to-Source Voltage (Vdss): Equal to or greater than 85V
• Continuous Drain Current (Id): Equal to or greater than 50A at 25°C
• Power Dissipation: Equal to or greater than 300W at case temperature
• Operating Temperature Range: Must encompass -55°C to 150°C

Allowable Variations: Substitute parts may exceed the original specifications in voltage rating, current capacity, power dissipation, and on-resistance performance. These enhancements provide design margin and improved thermal characteristics without compromising circuit compatibility.

Parameter Comparison

Engineering Selection Recommendations

IXTT50P10 Selection Criteria:

The IXTT50P10 is an active production part that maintains electrical equivalence to the IXTT50P085 across all critical parameters. It provides a 100V voltage rating compared to the original 85V specification, delivering enhanced overvoltage margin. On-resistance, gate charge, and power dissipation remain identical to the original part. This substitute is suitable for direct replacement in applications where the original 85V rating is adequate and additional voltage headroom is beneficial. The IXTT50P10 carries ROHS3 compliance and REACH unaffected status, meeting current regulatory requirements.

IXTT90P10P Selection Criteria:

The IXTT90P10P is an active production part from the IXYS PolarP™ series offering enhanced performance characteristics. It provides 100V voltage rating, 90A continuous drain current (versus 50A original), and 462W power dissipation (versus 300W original). On-resistance is reduced to 25 mOhm at 45A, and gate charge is minimized at 120 nC. This substitute is appropriate for applications requiring higher current capacity, improved thermal performance, or reduced switching losses. The IXTT90P10P also carries ROHS3 compliance and REACH unaffected status.

Both substitute parts maintain identical package geometry (TO-268AA), mounting type (surface mount), and operating temperature range (-55°C to 150°C), ensuring mechanical and thermal compatibility with existing PCB designs and assembly processes.

Frequently Asked Questions (FAQ)

Q: Can the IXTT50P10 be used as a direct replacement for the IXTT50P085?

A: Yes. The IXTT50P10 maintains identical electrical performance at the specified operating points (50A continuous drain current, 55 mOhm on-resistance at 10V drive, 300W power dissipation) while providing a higher voltage rating (100V versus 85V). The TO-268AA package footprint and surface mount assembly requirements are identical, enabling direct PCB substitution.

Q: What is the primary advantage of selecting the IXTT90P10P over the IXTT50P10?

A: The IXTT90P10P provides higher current capacity (90A versus 50A), lower on-resistance (25 mOhm versus 55 mOhm), and greater power dissipation capability (462W versus 300W). These characteristics reduce thermal stress and switching losses in high-current applications. Selection depends on whether the application requires this enhanced performance or if the IXTT50P10 specifications are sufficient.

Q: Are there package compatibility concerns when substituting these parts?

A: No. All three parts use the TO-268AA package (D³Pak with 2 leads plus tab), ensuring identical PCB footprint, lead spacing, and thermal interface characteristics. Surface mount assembly processes require no modification.

Q: What compliance certifications apply to the substitute parts?

A: Both IXTT50P10 and IXTT90P10P are ROHS3 compliant and REACH unaffected. These certifications meet current environmental and regulatory requirements for electronic component manufacturing and use.

Q: Does the higher gate charge of the IXTT90P10P affect gate drive circuit design?

A: The IXTT90P10P has a gate charge of 120 nC compared to 150 nC for the IXTT50P085. This represents a reduction in gate charge, which decreases gate drive power requirements and switching time. No gate drive circuit redesign is necessary; the substitute part operates within the same gate voltage range (±20V maximum).

Q: Can these parts be used in applications rated for the original 85V specification?

A: Yes. Both substitute parts are rated for 100V, which exceeds the 85V requirement. Applications designed for 85V operation are fully compatible with these higher-rated devices. The additional voltage margin provides design safety without compromising performance.

Q: What is the moisture sensitivity level for these parts?

A: All three parts carry MSL 1 (Unlimited) classification, indicating no moisture sensitivity restrictions during storage, handling, or assembly processes.