IXTT30N60P N-Channel 600V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTT30N60P is an N-Channel 600V 30A MOSFET manufactured by IXYS in the Polar series, housed in a TO-268AA surface mount package. This device is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance. The part delivers 540W maximum power dissipation and operates across a temperature range of -55°C to 150°C (TJ).

Substiute Parts

IXTT30N60P
IXYSIn Stock: 1134IXTT30N60P Datasheet
IXTT30N60P
Current Part
IXTT26N60P
IXYSIn Stock: 880IXTT26N60P Datasheet
IXTT26N60P
MFR Recommended
APT28F60S
Microsemi CorporationIn Stock: 743APT28F60S Datasheet
APT28F60S
Direct

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 30 A (Tc)
On-State Resistance (Rds On Max) 240 mOhm @ 15A, 10V
Gate Threshold Voltage (Vgs(th) Max) 5 V @ 250µA
Gate Charge (Qg Max) 82 nC @ 10V
Input Capacitance (Ciss Max) 5050 pF @ 25V
Power Dissipation (Max) 540 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-268-3, D³Pak Surface Mount
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the IXTT30N60P is determined by alignment across the following critical electrical and mechanical parameters:

Voltage Rating: All substitute parts must maintain the 600V Drain to Source Voltage (Vdss) specification to ensure safe operation in the target application circuit.

Current Capability: Substitute parts are grouped by continuous drain current rating. Parts with equal or greater current capacity (30A or higher) provide direct functional equivalence. Parts with reduced current capacity (26A) function as reduced-performance alternatives suitable only for applications with lower current demands.

On-State Resistance (Rds On): This parameter directly affects power dissipation and thermal performance. Lower Rds On values indicate improved efficiency and reduced heat generation.

Gate Charge (Qg): This parameter influences switching speed and gate drive requirements. Variations in gate charge affect circuit performance in high-frequency switching applications.

Package Compatibility: All substitute parts use the TO-268-3 D³Pak surface mount package, ensuring mechanical and thermal interface compatibility with the original design.

Compliance and Status: Substitute parts must maintain ROHS3 compliance and active or equivalent product status to ensure supply chain availability and regulatory adherence.

Parameter Comparison

Parameter IXTT30N60P (Main) IXTT26N60P (Substitute) APT28F60S (Substitute)
Manufacturer IXYS IXYS Microsemi Corporation
Drain to Source Voltage (Vdss) 600V 600V 600V
Continuous Drain Current (Id) @ 25°C 30A (Tc) 26A (Tc) 30A (Tc)
Rds On (Max) 240 mOhm @ 15A, 10V 270 mOhm @ 500mA, 10V 220 mOhm @ 14A, 10V
Gate Threshold Voltage (Vgs(th) Max) 5V @ 250µA 5V @ 250µA 5V @ 1mA
Gate Charge (Qg Max) 82 nC @ 10V 72 nC @ 10V 140 nC @ 10V
Input Capacitance (Ciss Max) 5050 pF @ 25V 4150 pF @ 25V 5575 pF @ 25V
Power Dissipation (Max) 540W (Tc) 460W (Tc) 520W (Tc)
Operating Temperature Range -55 to 150°C (TJ) -55 to 150°C (TJ) -55 to 150°C (TJ)
Package Type TO-268-3, D³Pak TO-268-3, D³Pak TO-268-3, D³Pak
Product Status Obsolete Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IXTT26N60P (IXYS Polar Series): This part is the manufacturer-recommended substitute from IXYS. It maintains the same 600V voltage rating, operates within the identical temperature range, and uses the same TO-268-3 D³Pak package. The part is currently in active production status with 806 units in stock. The reduced continuous drain current (26A versus 30A) and lower power dissipation rating (460W versus 540W) restrict this substitute to applications where the circuit current demand does not exceed 26A. The lower gate charge (72 nC versus 82 nC) provides improved switching characteristics. This substitute is suitable for direct replacement in current-limited applications or as a cost-optimized alternative where full 30A capacity is not required.

APT28F60S (Microsemi POWER MOS 8™ Series): This part provides electrical equivalence with the original IXTT30N60P, matching both the 30A continuous drain current and 600V voltage rating. The APT28F60S is in active production status with 661 units in stock. The superior on-state resistance (220 mOhm versus 240 mOhm) delivers improved thermal efficiency. The higher gate charge (140 nC versus 82 nC) requires increased gate drive capability but does not preclude substitution in standard gate drive circuits. The slightly higher input capacitance (5575 pF versus 5050 pF) has minimal impact on circuit performance. This substitute provides full functional equivalence and is suitable for direct replacement in applications requiring the complete 30A current capability.

Both substitute parts maintain ROHS3 compliance and are available from active production inventory, ensuring supply chain continuity for the obsolete IXTT30N60P.

Frequently Asked Questions (FAQ)

Q: Can the IXTT26N60P be used as a direct replacement for the IXTT30N60P in all applications?

A: The IXTT26N60P functions as a direct replacement only in applications where the continuous drain current requirement does not exceed 26A. The reduced current rating (26A versus 30A) and lower power dissipation capability (460W versus 540W) limit its use to lower-power circuit designs. Applications requiring the full 30A current capacity must use the APT28F60S or equivalent 30A-rated substitute.

Q: What are the key differences between the IXTT26N60P and APT28F60S substitutes?

A: Both parts maintain the 600V voltage rating and TO-268-3 D³Pak package. The IXTT26N60P provides 26A continuous current with 72 nC gate charge, while the APT28F60S delivers 30A continuous current with 140 nC gate charge. The APT28F60S offers superior on-state resistance (220 mOhm versus 270 mOhm) and matches the original 30A current capacity. The IXTT26N60P is suitable for reduced-current applications, while the APT28F60S provides full functional equivalence to the original part.

Q: Are the substitute parts compatible with the original PCB layout and thermal management design?

A: Yes. Both substitute parts use the identical TO-268-3 D³Pak surface mount package with the same lead configuration and thermal tab interface. PCB footprints and thermal management designs developed for the IXTT30N60P are directly compatible with both substitute parts without modification.

Q: What is the impact of higher gate charge in the APT28F60S on circuit performance?

A: The APT28F60S gate charge of 140 nC (versus 82 nC in the original part) requires proportionally higher gate drive current to achieve the same switching speed. Standard gate drive circuits designed for the IXTT30N60P will function with the APT28F60S but may exhibit slightly slower switching transitions. Gate drive circuits with adequate current sourcing capability (typically 1-2A minimum) accommodate this difference without performance degradation.

Q: Do all substitute parts maintain the same operating temperature range?

A: Yes. The IXTT26N60P and APT28F60S both operate across the identical temperature range of -55°C to 150°C (TJ), matching the original IXTT30N60P specification.

Q: Are the substitute parts RoHS compliant?

A: Yes. Both the IXTT26N60P and APT28F60S are ROHS3 compliant, maintaining regulatory compliance with the original part.

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