IXTT16N10D2 Equivalent & Substitute Parts

Part Overview

The IXTT16N10D2 is an N-Channel depletion-mode MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage and 16A continuous drain current in a surface-mount TO-268AA package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Substiute Parts

IXTT16N10D2

IXYSIn Stock: 3690IXTT16N10D2 Datasheet

Current PartRFQ

IXTT16N20D2

IXYSIn Stock: 2290IXTT16N20D2 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTT16N10D2 is determined by the following critical electrical and mechanical parameters:

Mandatory Compatibility Criteria:

• FET Type: N-Channel depletion-mode MOSFET
• Continuous Drain Current: 16A (Tc) minimum
• Package: TO-268AA surface mount
• Gate-Source Voltage Range: ±20V
• Moisture Sensitivity Level: 1 (Unlimited)
• RoHS3 Compliance and REACH Unaffected status

Allowable Parameter Variations:

• Drain-to-Source Voltage (Vdss): Equal to or greater than 100V
• On-State Resistance (Rds On): Equal to or less than 64mOhm @ 8A, 0V
• Gate Charge (Qg): Equal to or less than 225nC @ 5V
• Input Capacitance (Ciss): Equal to or less than 5700pF @ 25V
• Power Dissipation: Equal to or greater than 830W (Tc)
• Operating Temperature: Minimum -55°C to maximum 175°C (TJ)

The IXTT16N20D2 qualifies as a substitute based on these criteria, with enhanced voltage rating and maintained current capability within the same package footprint.

Parameter Comparison

Engineering Selection Recommendations

IXTT16N20D2 as Primary Substitute:

The IXTT16N20D2 is the manufacturer-recommended substitute for the obsolete IXTT16N10D2. Both devices maintain identical N-Channel depletion-mode MOSFET architecture, continuous drain current rating of 16A, and TO-268AA surface-mount packaging. The substitute provides enhanced voltage capability (200V vs. 100V Vdss), enabling operation in higher-voltage applications while maintaining backward compatibility in lower-voltage circuits.

Compliance and Status Considerations:

The IXTT16N20D2 holds Active product status, ensuring ongoing availability and manufacturing support. Both parts maintain ROHS3 compliance and REACH Unaffected designation, satisfying regulatory requirements for industrial and commercial applications. The substitute's RoHS3 certification and unlimited moisture sensitivity level (MSL 1) align with the original part's environmental and handling specifications.

Electrical Performance Trade-offs:

The substitute exhibits a marginal increase in on-state resistance (73mOhm vs. 64mOhm @ 8A, 0V), resulting in approximately 14% higher conduction losses. This trade-off is offset by reduced gate charge (208nC vs. 225nC) and input capacitance (5500pF vs. 5700pF), improving switching performance. Maximum power dissipation decreases to 695W from 830W, reflecting the higher voltage rating's thermal characteristics. Operating temperature range reduces to -55°C to 150°C (from -55°C to 175°C), which remains suitable for standard industrial temperature environments.

Frequently Asked Questions (FAQ)

Q: Can the IXTT16N20D2 directly replace the IXTT16N10D2 in existing designs?

A: Direct replacement is permissible when the application circuit operates at or below 100V drain-to-source voltage. The IXTT16N20D2's higher voltage rating (200V) provides design margin in lower-voltage applications. Verification of thermal management is required due to the 14% increase in on-state resistance, which may affect power dissipation in high-current continuous-operation scenarios.

Q: What are the key differences between these two depletion-mode MOSFETs?

A: The primary differences are drain-to-source voltage rating (100V vs. 200V), on-state resistance (64mOhm vs. 73mOhm), and maximum operating temperature (175°C vs. 150°C). Gate charge and input capacitance are slightly lower in the substitute, improving switching speed. Both devices maintain identical 16A continuous drain current and TO-268AA packaging.

Q: Are there any package or pinout differences between these parts?

A: Both the IXTT16N10D2 and IXTT16N20D2 use the TO-268AA surface-mount package with identical pinout configuration (2 leads plus tab). No PCB layout modifications are required for substitution.

Q: What is the significance of the depletion-mode FET classification?

A: Depletion-mode FETs conduct current in the absence of gate-source voltage, differing from enhancement-mode devices that require positive gate bias for conduction. This characteristic determines gate drive circuit design and is not interchangeable with enhancement-mode alternatives. Both substitute parts maintain this depletion-mode operation.

Q: How does the increased on-state resistance affect circuit performance?

A: The 9mOhm increase in Rds On (64mOhm to 73mOhm) results in proportionally higher conduction losses at rated current. In a 16A application, this represents approximately 14.4W additional power dissipation at maximum current. Thermal design review is necessary for applications operating continuously at or near rated current levels.

Q: Are both parts suitable for high-temperature applications?

A: The IXTT16N10D2 supports operation to 175°C junction temperature, while the IXTT16N20D2 is rated to 150°C. For applications requiring operation above 150°C, the original part specification must be maintained. Standard industrial applications operating below 150°C are compatible with the substitute.

Q: What compliance certifications apply to both parts?

A: Both the IXTT16N10D2 and IXTT16N20D2 are ROHS3 compliant and REACH Unaffected. Moisture sensitivity level is 1 (Unlimited) for both devices, indicating no special moisture-control handling requirements during storage or assembly.