IXTR90P10P MOSFET P-Channel Equivalent & Substitute Parts

Part Overview

The IXTR90P10P is a P-Channel MOSFET manufactured by IXYS in the PolarP™ series, rated for 100V drain-to-source voltage with 57A continuous drain current at 25°C. The device is packaged in the ISOPLUS247™ (TO-247-3) through-hole configuration and is designed for high-power switching applications requiring robust thermal performance up to 190W at the case temperature.

This part is classified as obsolete. Locating equivalent or substitute components is necessary to support ongoing system maintenance, design updates, or production continuity where the IXTR90P10P is no longer readily available from primary sources.

Substiute Parts

IXTR90P10P
IXYSIn Stock: 1108IXTR90P10P Datasheet
IXTR90P10P
Current Part
IXTR170P10P
IXYSIn Stock: 948IXTR170P10P Datasheet
IXTR170P10P
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 57 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 27 mOhm @ 45A, 10V
Power Dissipation (Max) 190 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case TO-247-3
Mounting Type Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IXTR90P10P is based on strict electrical and mechanical compatibility criteria. The following parameters must remain constant or be exceeded in the substitute component:

Fixed Parameters (Must Match Exactly):

  • FET Type: P-Channel
  • Drain to Source Voltage (Vdss): 100V
  • Drive Voltage (Max Rds On): 10V
  • Package / Case: TO-247-3
  • Mounting Type: Through Hole
  • Operating Temperature Range: -55°C to 150°C (TJ)

Allowable Parameter Ranges (Substitute May Equal or Exceed):

  • Current - Continuous Drain (Id) @ 25°C: ≥ 57A
  • Power Dissipation (Max): ≥ 190W
  • Rds On (Max): ≤ 27mOhm (lower is acceptable)

The IXTR170P10P meets all fixed parameter requirements and exceeds the allowable ranges for current, power dissipation, and on-resistance, making it a valid substitute for the IXTR90P10P.

Parameter Comparison

Parameter IXTR90P10P IXTR170P10P Unit
FET Type P-Channel P-Channel
Drain to Source Voltage (Vdss) 100 100 V
Current - Continuous Drain (Id) @ 25°C 57 108 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 27 @ 45A, 10V 13 @ 85A, 10V mOhm
Vgs(th) (Max) @ Id 4 @ 250µA 4 @ 1mA V
Gate Charge (Qg) (Max) @ Vgs 120 @ 10V 240 @ 10V nC
Input Capacitance (Ciss) (Max) @ Vds 5800 @ 25V 12600 @ 25V pF
Power Dissipation (Max) 190 312 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package / Case TO-247-3 TO-247-3
Mounting Type Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

The IXTR170P10P is a direct substitute for the IXTR90P10P based on the following criteria:

Electrical Compatibility: Both devices share identical voltage ratings (100V Vdss), gate drive voltage (10V), and operating temperature range (-55°C to 150°C). The IXTR170P10P provides superior performance with doubled continuous drain current (108A versus 57A) and increased power dissipation capability (312W versus 190W), while maintaining lower on-resistance (13mOhm versus 27mOhm).

Mechanical Compatibility: Both components use the TO-247-3 package in through-hole mounting configuration, ensuring identical PCB footprint and thermal interface requirements.

Regulatory Compliance: Both parts are ROHS3 compliant, REACH unaffected, and carry the same ECCN and HTSUS classifications, meeting identical regulatory requirements.

Product Status: The IXTR170P10P is classified as active, ensuring continued availability and supply chain support, whereas the IXTR90P10P is obsolete.

Frequently Asked Questions (FAQ)

Q: Can the IXTR170P10P be used as a direct replacement for the IXTR90P10P in existing designs?

A: Yes. The IXTR170P10P is electrically and mechanically compatible with the IXTR90P10P. Both devices share identical voltage ratings, gate drive specifications, and package geometry. The IXTR170P10P provides enhanced performance characteristics without requiring circuit modifications.

Q: What are the key differences between these two parts?

A: The IXTR170P10P exceeds the IXTR90P10P in three primary areas: continuous drain current (108A versus 57A), power dissipation (312W versus 190W), and on-resistance efficiency (13mOhm versus 27mOhm). Gate charge and input capacitance are higher in the IXTR170P10P due to its larger die size, which may require gate driver adjustment in high-frequency switching applications.

Q: Are there any thermal considerations when substituting the IXTR170P10P?

A: The IXTR170P10P has a larger thermal capacity (312W versus 190W) and lower on-resistance, resulting in reduced junction temperature rise under identical load conditions. This provides improved thermal margin in applications operating near the original part's power limits.

Q: Do both parts require the same PCB layout and mounting hardware?

A: Yes. Both the IXTR90P10P and IXTR170P10P use the TO-247-3 package with identical pin configuration and through-hole mounting requirements. Existing PCB layouts and thermal interface hardware are fully compatible.

Q: What is the impact of higher gate charge in the IXTR170P10P?

A: The IXTR170P10P has doubled gate charge (240nC versus 120nC) due to its larger silicon die. In applications with fixed gate drive current, this results in longer switching times. Gate driver circuits with sufficient current capacity will not experience performance degradation.

Q: Are both parts available in the same packaging format?

A: The IXTR90P10P is supplied in standard through-hole format. The IXTR170P10P is supplied in tube packaging. Both use the identical TO-247-3 component package. Tube packaging does not affect electrical or mechanical compatibility.

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