IXTQ69N30P N-Channel MOSFET 300V 69A Equivalent & Substitute Parts

Part Overview

The IXTQ69N30P is an N-Channel MOSFET manufactured by IXYS, rated for 300V drain-to-source voltage with 69A continuous drain current at 25°C. This device is housed in a TO-3P package and is designed for high-power switching applications requiring through-hole mounting. The part is currently in active production status with 6385 units in stock.

Equivalent and substitute parts are identified when they share identical or compatible electrical ratings and mechanical specifications within the allowed parameters for this MOSFET category. Substitutes enable design flexibility, support supply chain alternatives, and provide options when the primary part becomes unavailable.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	300	V
Continuous Drain Current (Id) @ 25°C	69	A
Power Dissipation (Max)	500	W
Rds On (Max) @ 10V	49	mOhm
Gate Charge (Qg) @ 10V	180	nC
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package Type	TO-3P	—

Substitute Part Grouping Explanation

Substitution of the IXTQ69N30P is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 300V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package Type: TO-3P or compatible variant (TO-3PN)
Power Dissipation: 500W (Tc)
Operating Temperature Range: -55°C to 150°C

Allowable Variation Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 69A at 25°C
Rds On (Max): Substitute must not exceed 49mOhm at specified conditions
Gate Charge (Qg): Substitute specifications provided for reference; lower values indicate faster switching
Input Capacitance (Ciss): Substitute specifications provided for reference

The FDA59N30 manufactured by onsemi qualifies as a substitute based on matching voltage rating, package type, power dissipation, and operating temperature range. The continuous drain current of 59A is lower than the primary part; therefore, this substitute is suitable only for applications where 59A continuous current is sufficient.

Parameter Comparison

Parameter	IXTQ69N30P (IXYS)	FDA59N30 (onsemi)	Unit
Drain to Source Voltage (Vdss)	300	300	V
Continuous Drain Current (Id) @ 25°C	69	59	A
Power Dissipation (Max)	500	500	W
Rds On (Max) @ 10V	49 @ 500mA	56 @ 29.5A	mOhm
Gate Charge (Qg) @ 10V	180	100	nC
Vgs (Max)	±20	±30	V
Input Capacitance (Ciss) @ 25V	4960	4670	pF
Operating Temperature Range	-55 to 150	-55 to 150	°C
Mounting Type	Through Hole	Through Hole	—
Package Type	TO-3P	TO-3PN	—
FET Type	N-Channel	N-Channel	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

IXTQ69N30P (Primary Part): The IXTQ69N30P is the preferred selection for applications requiring 69A continuous drain current at 300V. This part is in active production status with substantial inventory availability (6385 units). It meets ROHS3 compliance and REACH unaffected status, suitable for regulated markets. The 49mOhm Rds On specification and 180nC gate charge support efficient power conversion in high-current switching applications.

FDA59N30 (Substitute Part): The FDA59N30 is a qualified substitute when the application current requirement does not exceed 59A continuous drain current. This part is manufactured by onsemi under the UniFET™ series and is in active production with higher inventory availability (17400 units). It provides equivalent voltage rating, power dissipation, and operating temperature range. The lower gate charge (100nC) and higher maximum gate voltage (±30V) may offer advantages in specific gate drive circuit designs. This part also meets ROHS3 compliance and REACH unaffected status.

Both parts are suitable for through-hole PCB assembly and share compatible TO-3P package footprints (TO-3P-3, SC-65-3).

Frequently Asked Questions (FAQ)

Q: Can the FDA59N30 replace the IXTQ69N30P in all applications?

A: The FDA59N30 is a suitable substitute only for applications where the continuous drain current requirement does not exceed 59A. The IXTQ69N30P is rated for 69A continuous current; therefore, applications requiring the full 69A rating must use the primary part or a higher-rated substitute.

Q: What is the difference between TO-3P and TO-3PN packages?

A: Both packages are through-hole mounted variants of the TO-3P family with compatible footprints (TO-3P-3, SC-65-3). The TO-3PN designation indicates a onsemi-specific package variant. Pin configuration and PCB layout compatibility are maintained across these variants.

Q: Are there differences in gate drive requirements between these parts?

A: The FDA59N30 has a lower gate charge (100nC versus 180nC) and higher maximum gate voltage rating (±30V versus ±20V). These differences may affect gate drive circuit design but do not prevent substitution. Gate drive circuits designed for the IXTQ69N30P will operate the FDA59N30 within specification.

Q: Do both parts meet the same regulatory compliance standards?

A: Yes. Both the IXTQ69N30P and FDA59N30 are ROHS3 compliant and REACH unaffected, meeting equivalent regulatory requirements for restricted substance use and environmental compliance.

Q: What is the impact of the Rds On difference between these parts?

A: The IXTQ69N30P has a lower Rds On specification (49mOhm at 500mA, 10V) compared to the FDA59N30 (56mOhm at 29.5A, 10V). Lower on-resistance reduces conduction losses and heat dissipation. Applications with tight thermal budgets or high-frequency switching may benefit from the lower Rds On of the primary part.

Q: Can these parts be used interchangeably in existing PCB designs?

A: Yes, provided the application current requirement does not exceed 59A. Both parts use through-hole TO-3P package variants with compatible footprints. No PCB layout modifications are required for substitution.

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