IXTQ30N60P N-Channel 600V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTQ30N60P is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage with 30A continuous drain current at 25°C. This device is packaged in a TO-3P through-hole configuration and is designed for high-voltage switching applications requiring substantial current handling capability. The part is currently in active production status with 1669 units in stock.

Substitute parts become necessary when the primary component experiences extended lead times, inventory constraints, or when design flexibility permits alternative configurations that meet the same electrical and mechanical requirements. Equivalent devices must maintain compatibility across critical parameters including voltage rating, current capacity, gate drive characteristics, and thermal performance.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	30	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	240	mOhm @ 15A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	5	V @ 250µA
Gate Charge (Qg) @ Vgs	82	nC @ 10V
Power Dissipation (Max)	540	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-3P	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXTQ30N60P is determined by the following critical parameters:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must support the application's current requirements
Gate Drive Voltage: Must be compatible with 10V drive voltage specification
Rds On (On-State Resistance): Must maintain acceptable power dissipation characteristics
Operating Temperature Range: Must span -55°C to 150°C minimum
Mounting Type: Through-hole configuration required
Regulatory Compliance: RoHS3 compliance mandatory

Substitution Logic: The provided substitute parts are grouped into two categories based on current rating and package configuration:

Direct Current-Rated Substitutes (23.5A–30A range): Parts maintaining similar or slightly reduced current capacity with comparable power dissipation in TO-3P or equivalent packages.
Reduced Current Substitutes (13A–18A range): Parts with lower current ratings and reduced power dissipation, suitable for applications where the full 30A capacity is not required, packaged in TO-247-3 configuration.

All substitute parts maintain the 600V voltage rating, compatible gate drive characteristics, and required temperature operating range.

Parameter Comparison

Parameter	IXTQ30N60P (Main)	FQA24N60	STW18N60M2	STW18NM60N	STW24N60M2
Manufacturer	IXYS	onsemi	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	600	600	600	600	600
Id @ 25°C (A)	30	23.5	13	13	18
Rds On (Max) @ 10V (mOhm)	240 @ 15A	240 @ 11.8A	280 @ 6.5A	285 @ 6.5A	190 @ 9A
Vgs(th) @ 250µA (V)	5	5	4	4	4
Gate Charge Qg @ 10V (nC)	82	145	21.5	35	29
Power Dissipation (Max) (W)	540	310	110	110	150
Package	TO-3P	TO-3PN	TO-247-3	TO-247-3	TO-247-3
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FQA24N60 (onsemi): This substitute provides the closest electrical match to the IXTQ30N60P with a 23.5A continuous drain current rating and identical 240mOhm on-state resistance specification at 10V drive voltage. The TO-3PN package maintains mechanical compatibility with TO-3P footprints. Both devices are ROHS3 compliant and rated for -55°C to 150°C operation. The FQA24N60 is suitable for applications where 23.5A capacity is sufficient and represents a direct form-fit-function alternative. Higher gate charge (145nC vs. 82nC) requires consideration in high-frequency switching circuits.

STW24N60M2 (STMicroelectronics): This device offers 18A continuous drain current with superior on-state resistance (190mOhm at 9A, 10V), resulting in lower conduction losses compared to the main part. The TO-247-3 package requires PCB layout modification but provides improved thermal management through enhanced lead configuration. Gate charge of 29nC enables faster switching transitions. Power dissipation rating of 150W is lower than the main part, limiting use to applications with reduced thermal requirements. ROHS3 compliance and -55°C to 150°C temperature range are maintained.

STW18N60M2 and STW18NM60N (STMicroelectronics): Both devices are rated for 13A continuous drain current with 110W maximum power dissipation. These parts are suitable only for applications where current requirements do not exceed 13A. The STW18NM60N (MDmesh™ II series) provides higher gate charge (35nC) compared to STW18N60M2 (21.5nC), affecting switching speed characteristics. Both maintain 600V voltage rating, -55°C to 150°C operation, and ROHS3 compliance. TO-247-3 packaging requires circuit board redesign.

Selection Criteria Summary:

Current Capacity Match Required: FQA24N60 for 23.5A applications; STW24N60M2 for 18A applications; STW18 series for 13A applications
Package Compatibility: FQA24N60 maintains TO-3P compatibility; STMicroelectronics parts require TO-247-3 footprint
Thermal Performance: Main part (540W) exceeds all substitutes; select based on actual application thermal budget
Switching Characteristics: Lower gate charge in STW18N60M2 (21.5nC) enables higher switching frequencies
Regulatory Compliance: All substitutes maintain ROHS3 compliance and required temperature range

Frequently Asked Questions (FAQ)

Q: Can the FQA24N60 directly replace the IXTQ30N60P without circuit modification?

A: The FQA24N60 maintains electrical compatibility across voltage rating (600V), gate drive voltage (10V), and on-state resistance (240mOhm). The TO-3PN package is mechanically compatible with TO-3P footprints. However, the reduced current rating (23.5A vs. 30A) and power dissipation (310W vs. 540W) require verification that the application does not exceed these limits. Gate charge is higher (145nC vs. 82nC), which may affect switching frequency performance in high-speed circuits.

Q: Why are the STMicroelectronics parts (STW18N60M2, STW18NM60N, STW24N60M2) listed as substitutes if they have lower current ratings?

A: These parts are included as substitutes for applications where the full 30A capacity of the IXTQ30N60P is not required. They maintain the critical 600V voltage rating and compatible gate drive characteristics. The STW24N60M2 (18A) provides a closer current match than the STW18 series (13A). These devices are suitable for designs with reduced current demands or where thermal constraints limit power dissipation to 110W–150W ranges.

Q: What is the impact of different gate charge values on circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXTQ30N60P has 82nC gate charge at 10V. The FQA24N60 (145nC) requires more gate drive energy, potentially increasing switching losses and reducing maximum switching frequency. The STW18N60M2 (21.5nC) and STW24N60M2 (29nC) have significantly lower gate charge, enabling higher switching frequencies and reduced driver power consumption. Circuit design must account for these differences in gate drive timing and power requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts—FQA24N60, STW18N60M2, STW18NM60N, and STW24N60M2—are ROHS3 compliant. The main part IXTQ30N60P is also ROHS3 compliant. This ensures compatibility with regulatory requirements across all substitution options.

Q: What package considerations apply when selecting a substitute?

A: The IXTQ30N60P uses TO-3P through-hole packaging. The FQA24N60 uses TO-3PN, which is mechanically compatible with existing TO-3P PCB layouts. The STMicroelectronics parts (STW18N60M2, STW18NM60N, STW24N60M2) use TO-247-3 packaging, which requires different PCB footprint and lead spacing. TO-247-3 substitution necessitates circuit board redesign and thermal management layout modification. Verify PCB layout compatibility before selecting a TO-247-3 alternative.

Q: Can the IXTQ30N60P be used in applications designed for lower-current substitutes?

A: Yes. The IXTQ30N60P can be used in any application designed for the lower-current substitutes (FQA24N60, STW24N60M2, STW18N60M2, STW18NM60N) because it exceeds their current and power dissipation ratings. However, the higher gate charge (82nC) may require gate driver adjustment compared to designs optimized for lower gate charge devices. Thermal management must accommodate the higher power dissipation capability of the main part.

Q: What is the difference between STW18N60M2 and STW18NM60N?

A: Both devices are rated for 13A continuous drain current at 600V with identical power dissipation (110W) and operating temperature range (-55°C to 150°C). The primary difference is gate charge: STW18N60M2 (MDmesh™ II Plus series) has 21.5nC, while STW18NM60N (MDmesh™ II series) has 35nC. The lower gate charge in STW18N60M2 enables faster switching transitions and reduced gate driver power consumption. Input capacitance also differs (791pF vs. 1000pF at different measurement voltages). Select based on switching frequency requirements and gate driver capabilities.

Q: Are there thermal management differences between TO-3P and TO-247-3 packages?

A: Yes. The TO-3P package (used by IXTQ30N60P and FQA24N60) provides a single mounting surface with integrated heat sink capability. The TO-247-3 package (used by STMicroelectronics parts) features three leads with improved thermal coupling through the center lead and mounting tab. TO-247-3 typically provides superior thermal performance per unit area due to enhanced lead configuration. However, the lower power dissipation ratings of STW series devices (110W–150W) result in lower absolute heat generation compared to the main part (540W), partially offsetting package thermal advantages.

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