IXTQ26N60P N-Channel 600V 26A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTQ26N60P is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage with 26A continuous drain current at 25°C. This device is packaged in a TO-3P through-hole configuration and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts with active product availability are necessary for new designs and ongoing production requirements. Substitute devices must maintain electrical compatibility across critical parameters including voltage rating, current capacity, gate characteristics, and thermal performance while accommodating packaging variations.

Substiute Parts

IXTQ26N60P

IXYSIn Stock: 22920IXTQ26N60P Datasheet

Current PartRFQ

IXTQ30N60P

IXYSIn Stock: 1724IXTQ30N60P Datasheet

MFR RecommendedRFQ

APT28F60B

Microsemi CorporationIn Stock: 1118APT28F60B Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTQ26N60P is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) must equal or exceed 600V
• Continuous Drain Current (Id) must meet or exceed 26A at 25°C
• Gate Threshold Voltage (Vgs(th)) must be compatible at specified test conditions
• Maximum Gate Voltage (Vgs Max) must be ±30V or greater
• Operating Temperature Range must span -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole
• Package compatibility: TO-3P or equivalent footprint

Substitute parts are grouped into two categories:

Category 1: Manufacturer Recommended Substitute (IXYS Series) The IXTQ30N60P represents the direct manufacturer-recommended upgrade within the same IXYS Polar series. This device maintains identical voltage rating and package type while providing enhanced current capacity (30A vs. 26A) and improved thermal performance (540W vs. 460W).

Category 2: Similar Alternative (Cross-Manufacturer) The APT28F60B from Microsemi Corporation provides electrical equivalence with identical voltage and current ratings but uses a different through-hole package (TO-247 [B] vs. TO-3P). This substitution requires PCB layout modification.

Parameter Comparison

Engineering Selection Recommendations

Primary Recommendation: IXTQ30N60P

The IXTQ30N60P is the preferred substitute for the obsolete IXTQ26N60P. This device is manufactured by IXYS within the same Polar series and maintains identical package configuration (TO-3P). The IXTQ30N60P is classified as Active product status, ensuring long-term availability and supply chain continuity. All electrical parameters are compatible or superior to the original device: voltage rating remains 600V, continuous drain current increases from 26A to 30A, and maximum power dissipation increases from 460W to 540W. Gate characteristics (Vgs(th), Vgs Max) remain identical. Both devices carry ROHS3 compliance, unlimited moisture sensitivity rating, and REACH Unaffected status. No PCB layout modifications are required for this substitution.

Secondary Recommendation: APT28F60B

The APT28F60B from Microsemi Corporation provides electrical equivalence with identical 600V voltage rating and 30A continuous drain current. This device is Active product status. The primary distinction is packaging: the APT28F60B uses TO-247 [B] configuration instead of TO-3P, requiring PCB footprint redesign. Gate charge (Qg) is higher at 140 nC compared to 72 nC for the original device, and input capacitance (Ciss) is higher at 5575 pF compared to 4150 pF. These differences may affect gate drive circuit performance. The APT28F60B carries identical compliance certifications (ROHS3, REACH Unaffected, MSL 1). This option is suitable only when PCB layout modification is feasible.

Frequently Asked Questions (FAQ)

Q: Why is the IXTQ26N60P obsolete and what does this mean for existing designs?

A: The IXTQ26N60P is classified as obsolete by the manufacturer, indicating it is no longer in active production. Existing inventory remains available, but long-term supply cannot be guaranteed. New designs and production runs should transition to active alternatives such as the IXTQ30N60P to ensure sustained component availability.

Q: Can the IXTQ30N60P directly replace the IXTQ26N60P without PCB modifications?

A: Yes. The IXTQ30N60P uses the identical TO-3P package and through-hole mounting configuration as the IXTQ26N60P. No PCB layout changes are required. The device footprint, pin spacing, and mounting holes are compatible.

Q: What are the key electrical differences between IXTQ26N60P and IXTQ30N60P?

A: Both devices share identical 600V voltage rating and ±30V gate voltage limits. The primary differences are: continuous drain current increases from 26A to 30A; maximum power dissipation increases from 460W to 540W; on-resistance (Rds On) decreases from 270 mOhm to 240 mOhm; gate charge increases from 72 nC to 82 nC; and input capacitance increases from 4150 pF to 5050 pF. These changes represent performance improvements suitable for higher current applications.

Q: Is the APT28F60B a direct replacement for the IXTQ26N60P?

A: The APT28F60B provides electrical equivalence in voltage rating (600V) and current capacity (30A), but uses a different package (TO-247 [B] instead of TO-3P). Direct PCB substitution is not possible without footprint redesign. Additionally, gate charge and input capacitance are higher, which may require gate drive circuit evaluation.

Q: What compliance certifications apply to all three devices?

A: All three devices (IXTQ26N60P, IXTQ30N60P, and APT28F60B) carry ROHS3 compliance, REACH Unaffected status, and Moisture Sensitivity Level 1 (Unlimited). These certifications ensure environmental and regulatory compliance across all substitution options.

Q: How does gate charge affect device selection?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXTQ26N60P has 72 nC gate charge, the IXTQ30N60P has 82 nC, and the APT28F60B has 140 nC. Higher gate charge requires more drive current from the gate driver circuit. If gate drive capability is limited, the lower gate charge of the original device may be advantageous, but the IXTQ30N60P increase (82 nC) is typically manageable in standard gate drive designs.

Q: What is the significance of on-resistance (Rds On) differences?

A: On-resistance directly affects power dissipation during conduction. Lower Rds On reduces heat generation. The IXTQ30N60P (240 mOhm) has lower on-resistance than the IXTQ26N60P (270 mOhm), resulting in improved thermal efficiency. The APT28F60B (250 mOhm) falls between these values. For high-current applications, the IXTQ30N60P provides superior thermal performance.

Q: Are there any thermal management considerations when substituting these devices?

A: All three devices operate across the same temperature range (-55°C to 150°C TJ). The IXTQ30N60P and APT28F60B both support higher maximum power dissipation (540W and 520W respectively) compared to the original IXTQ26N60P (460W). Thermal management requirements depend on application duty cycle and ambient conditions. The improved power dissipation ratings of substitute devices provide additional thermal margin.

Q: Can I use the IXTQ30N60P in applications originally designed for the IXTQ26N60P?

A: Yes. The IXTQ30N60P is a performance upgrade suitable for all applications designed for the IXTQ26N60P. The identical voltage rating, compatible gate characteristics, and superior current and thermal ratings make it a direct functional replacement. No circuit redesign is required.