IXTQ170N10P N-Channel MOSFET 100V 170A Equivalent & Substitute Parts

Part Overview

The IXTQ170N10P is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage with 170A continuous drain current at 25°C. This device is housed in a TO-3P package and is designed for high-current switching applications requiring through-hole mounting. The part is currently active in production with full RoHS3 compliance and unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified when alternative components meet the core electrical specifications and operational requirements while maintaining compatibility with the application's thermal, voltage, and current demands. Substitutes may differ in package configuration, power dissipation capability, or gate charge characteristics while preserving the fundamental switching performance parameters.

Substiute Parts

IXTQ170N10P

IXYSIn Stock: 1517IXTQ170N10P Datasheet

Current PartRFQ

IRFP4110PBF

Infineon TechnologiesIn Stock: 15572IRFP4110PBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXTQ170N10P is determined by the following core electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Operating Temperature Range: Must encompass -55°C to 175°C
• Gate Voltage Rating (Vgs): Must support ±20V maximum
• RoHS3 Compliance: Required for regulatory alignment

Secondary Compatibility Factors:

• Continuous Drain Current (Id): Substitute must support minimum 170A at 25°C, or application must tolerate reduced current capacity
• Rds On (Max): Lower values indicate improved efficiency; higher values acceptable if thermal design accommodates increased dissipation
• Package Type: Through-hole mounting required; physical footprint differences require PCB layout verification
• Power Dissipation: Substitute with lower rating requires thermal management review

The IRFP4110PBF meets all primary substitution criteria. However, its continuous drain current rating of 120A is below the IXTQ170N10P specification of 170A, requiring application-level assessment of current demand.

Parameter Comparison

Engineering Selection Recommendations

IXTQ170N10P (Primary Selection)

The IXTQ170N10P remains the primary component choice when the application requires the full 170A continuous drain current specification. This device is active in production with confirmed RoHS3 compliance and REACH unaffected status. The TO-3P package provides established thermal performance with 715W maximum power dissipation capability. Current inventory of 1481 pieces supports immediate procurement.

IRFP4110PBF (Substitute Selection)

The IRFP4110PBF is a valid substitute when application current requirements do not exceed 120A continuous drain current at 25°C. This device meets all primary substitution criteria: identical 100V Vdss rating, N-Channel configuration, MOSFET technology, and full operating temperature range compatibility (-55°C to 175°C). RoHS3 compliance and REACH unaffected status align with regulatory requirements.

Key Differences Requiring Application Assessment:

The IRFP4110PBF exhibits lower on-resistance (4.5 mOhm at 75A versus 9 mOhm at 500mA), resulting in reduced conduction losses but lower maximum power dissipation (370W versus 715W). The TO-247AC package differs physically from the TO-3P, requiring PCB layout modification. Input capacitance is higher (9620 pF at 50V versus 6000 pF at 25V), affecting gate drive circuit design. Gate charge is marginally higher (210 nC versus 198 nC at 10V).

Both devices are active in production with unlimited moisture sensitivity rating (MSL 1) and identical compliance certifications.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4110PBF directly replace the IXTQ170N10P in all applications?

A: Direct replacement is possible only when the application current demand does not exceed 120A continuous drain current. The IRFP4110PBF is rated for 120A at 25°C, compared to the IXTQ170N10P at 170A. If the circuit operates at or near 170A, the substitute will operate outside its rated specification. Package differences (TO-247AC versus TO-3P) require PCB layout modification.

Q: What are the thermal implications of substituting the IRFP4110PBF?

A: The IRFP4110PBF has lower maximum power dissipation (370W versus 715W). At equivalent current levels, the lower on-resistance (4.5 mOhm versus 9 mOhm) reduces conduction losses. However, the reduced power dissipation rating limits thermal headroom. Thermal design must account for the lower maximum rating and verify that junction temperature remains within the -55°C to 175°C operating range under worst-case conditions.

Q: Are there package compatibility concerns?

A: Yes. The IXTQ170N10P uses TO-3P packaging, while the IRFP4110PBF uses TO-247AC. These packages have different physical dimensions, pin configurations, and thermal characteristics. PCB layout, heatsink mounting, and gate drive connections require redesign. Mechanical fit verification is mandatory before implementation.

Q: Do both devices meet the same compliance standards?

A: Yes. Both the IXTQ170N10P and IRFP4110PBF are RoHS3 compliant and REACH unaffected. Both carry ECCN EAR99 classification and identical HTSUS codes (8541.29.0095). Regulatory requirements are satisfied by either device.

Q: How do gate charge differences affect circuit design?

A: Gate charge is 198 nC for the IXTQ170N10P and 210 nC for the IRFP4110PBF at 10V. This 6% difference is minor and typically does not require gate drive circuit redesign. However, input capacitance differs more significantly (6000 pF at 25V versus 9620 pF at 50V), which affects switching speed and gate drive current requirements. Gate drive circuit performance should be verified under actual operating conditions.

Q: What is the inventory status for each device?

A: The IXTQ170N10P has 1481 pieces in stock. The IRFP4110PBF has 15532 pieces in stock. Availability favors the substitute part; however, component selection must be based on electrical and thermal requirements, not inventory levels alone.

Q: Can the IRFP4110PBF handle the same voltage stress as the IXTQ170N10P?

A: Yes. Both devices are rated for 100V drain-to-source voltage (Vdss) and ±20V maximum gate voltage (Vgs). Voltage stress capability is identical. The operating temperature range is also identical (-55°C to 175°C). Voltage and temperature compatibility are fully maintained.