IXTQ16N50P N-Channel 500V 16A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTQ16N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 16A continuous drain current at 25°C. This device is packaged in TO-3P and operates across a temperature range of -55°C to 150°C. The part is Active status and RoHS3 compliant, with 2100 units currently in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified voltage and current ratings, while maintaining compatibility with the through-hole mounting requirement and thermal specifications.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	16	A
On-State Resistance (Rds On) @ 8A, 10V	400	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5.5	V
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-3P	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXTQ16N50P is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must support 16A or greater at 25°C
Mounting Type: Must be Through Hole compatible
Package Compatibility: TO-3P or equivalent footprint

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Threshold Voltage (Vgs(th)): Must fall within acceptable gate drive specifications
Power Dissipation: Must support thermal requirements of the application
Operating Temperature: Must encompass the -55°C to 150°C range or application-specific subset
Compliance Status: RoHS3 compliance required for regulated applications

The substitute parts listed below meet the primary substitution criteria with varying degrees of secondary parameter alignment.

Parameter Comparison

Parameter	IXTQ16N50P (Main)	2SK1317-E	STW14NK50Z	STW20NK50Z
Manufacturer	IXYS	Renesas Electronics	STMicroelectronics	STMicroelectronics
Vdss (V)	500	1500	500	500
Id @ 25°C (A)	16	2.5	14	17
Rds On (mOhm)	400 @ 8A, 10V	12000 @ 2A, 15V	380 @ 6A, 10V	270 @ 8.5A, 10V
Vgs(th) (V)	5.5 @ 250µA	—	4.5 @ 100µA	4.5 @ 100µA
Gate Charge Qg (nC)	43 @ 10V	—	92 @ 10V	119 @ 10V
Ciss (pF)	2250 @ 25V	990 @ 10V	2000 @ 25V	2600 @ 25V
Power Dissipation (W)	300	100	150	190
Operating Temperature (°C)	-55 to 150	—	-55 to 150	—
Package	TO-3P	TO-3P	TO-247-3	TO-247-3
RoHS3 Compliance	Yes	Yes	Yes	Yes
Inventory Status	2100 Pcs	32765 Pcs	5447 Pcs	7794 Pcs

Engineering Selection Recommendations

STW20NK50Z (STMicroelectronics)

The STW20NK50Z is the primary substitute for the IXTQ16N50P. Both devices share identical Vdss (500V) and comparable continuous drain current ratings (17A vs. 16A). The STW20NK50Z demonstrates superior on-state resistance performance (270 mOhm vs. 400 mOhm), resulting in lower conduction losses. Both parts are RoHS3 compliant and Active status. The primary difference is package format: STW20NK50Z uses TO-247-3 instead of TO-3P. This substitution is suitable when PCB layout can accommodate the TO-247-3 footprint.

STW14NK50Z (STMicroelectronics)

The STW14NK50Z provides an alternative with matching Vdss (500V) and near-equivalent continuous drain current (14A vs. 16A). On-state resistance is comparable (380 mOhm vs. 400 mOhm). This device is RoHS3 compliant and Active status. The 14A rating represents a 12.5% reduction in current capacity relative to the IXTQ16N50P. This substitution is applicable in applications where the 14A rating satisfies design requirements. Package format is TO-247-3.

2SK1317-E (Renesas Electronics Corporation)

The 2SK1317-E is not recommended as a direct substitute. Although it shares the TO-3P package and through-hole mounting, the device is rated for 1500V Vdss and only 2.5A continuous drain current. The 2.5A rating is insufficient for applications requiring 16A operation. The on-state resistance specification (12 Ohm @ 2A, 15V) is not directly comparable to the IXTQ16N50P due to different measurement conditions. This part is suitable only for high-voltage, low-current applications.

Compliance and Status Considerations

All substitute parts maintain Active product status and RoHS3 compliance, ensuring long-term availability and regulatory alignment with the original IXTQ16N50P.

Frequently Asked Questions (FAQ)

Q: Can the STW20NK50Z directly replace the IXTQ16N50P without circuit modifications?

A: Electrical substitution is feasible due to matching Vdss (500V) and comparable current ratings (17A vs. 16A). However, the package change from TO-3P to TO-247-3 requires PCB layout modification. Gate drive characteristics differ slightly (Vgs(th) 4.5V vs. 5.5V), which may require gate resistor adjustment in high-frequency switching applications.

Q: Why is the 2SK1317-E listed as a substitute if the current rating is only 2.5A?

A: The 2SK1317-E is included in the substitute list based on the provided input parameters. However, the 2.5A continuous drain current rating is substantially lower than the IXTQ16N50P 16A rating. This part is not suitable for applications requiring the full 16A capacity and should be selected only for high-voltage, low-current designs.

Q: What are the thermal implications of switching from IXTQ16N50P (300W) to STW20NK50Z (190W)?

A: The STW20NK50Z has a lower maximum power dissipation rating (190W vs. 300W). In applications operating near the thermal limits of the IXTQ16N50P, the STW20NK50Z may require enhanced thermal management or reduced operating current to maintain equivalent junction temperature margins.

Q: Are there package footprint compatibility issues between TO-3P and TO-247-3?

A: TO-3P and TO-247-3 are distinct package formats with different pin configurations and PCB footprints. Direct socket substitution is not possible. PCB redesign is required to accommodate TO-247-3 devices. Both packages are through-hole mounted and suitable for high-current applications.

Q: Do all substitute parts support the full -55°C to 150°C operating temperature range?

A: The IXTQ16N50P and STW14NK50Z both specify -55°C to 150°C operating temperature range. The STW20NK50Z specifies only 150°C maximum junction temperature without a minimum temperature specification in the provided data. The 2SK1317-E does not include operating temperature range data. Verify temperature specifications against application requirements before selection.

Q: What is the significance of gate charge (Qg) differences between these devices?

A: Gate charge affects switching speed and gate drive power requirements. The IXTQ16N50P has the lowest gate charge (43 nC @ 10V), resulting in faster switching and lower gate drive losses. The STW20NK50Z (119 nC) and STW14NK50Z (92 nC) require higher gate drive energy. In high-frequency switching applications, this difference impacts overall circuit efficiency.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXTQ16N50P, STW20NK50Z, STW14NK50Z, and 2SK1317-E are all RoHS3 compliant, meeting regulatory requirements for restricted substance elimination.

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