IXTQ150N15P N-Channel 150V 150A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTQ150N15P is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by IXYS, rated for 150V drain-to-source voltage and 150A continuous drain current at 25°C. This device is packaged in a TO-3P through-hole configuration and is designed for high-power switching applications requiring robust thermal performance and reliable gate control characteristics. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified when alternative MOSFETs meet or exceed the electrical specifications and operational requirements of the primary device while maintaining compatibility with the intended application circuit topology and thermal management design.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	150	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	13	mOhm @ 500mA, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	5	V @ 250µA
Gate Charge (Qg Max) @ Vgs	190	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss Max) @ Vds	5800	pF @ 25V
Power Dissipation (Max)	714	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-3P	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the IXTQ150N15P are identified based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain a Vdss rating equal to or greater than 150V to ensure safe operation under maximum applied drain-to-source voltage conditions.

Current Capability: The substitute part must support a continuous drain current (Id) rating equal to or greater than 150A at 25°C to handle the intended load current without thermal derating.

On-State Resistance: The substitute part must demonstrate acceptable Rds On characteristics to ensure comparable conduction losses and thermal performance within the application circuit.

Gate Control Characteristics: The substitute part must operate within compatible gate threshold voltage (Vgs(th)) and maximum gate voltage (Vgs Max) ranges to ensure proper gate drive circuit integration.

Thermal Performance: The substitute part must provide adequate power dissipation capability to manage heat generation in the target application.

Package and Mounting: The substitute part must be compatible with the through-hole mounting requirement and circuit board layout constraints.

Compliance Status: The substitute part must maintain active product status and equivalent regulatory compliance certifications (RoHS3, REACH, ECCN).

Parameter Comparison

Parameter	IXTQ150N15P (Main Part)	IRFP4568PBF (Substitute)	Compatibility Assessment
Manufacturer	IXYS	Infineon Technologies	Different manufacturers; equivalent specifications
FET Type	N-Channel	N-Channel	Compatible
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Compatible
Drain-to-Source Voltage (Vdss)	150 V	150 V	Equivalent
Continuous Drain Current (Id) @ 25°C	150 A (Tc)	171 A (Tc)	Substitute exceeds requirement
On-State Resistance (Rds On Max)	13 mOhm @ 500mA, 10V	5.9 mOhm @ 103A, 10V	Substitute provides lower resistance
Gate Threshold Voltage (Vgs(th) Max) @ Id	5 V @ 250µA	5 V @ 250µA	Equivalent
Gate Charge (Qg Max) @ Vgs	190 nC @ 10V	227 nC @ 10V	Substitute requires higher gate charge
Maximum Gate Voltage (Vgs Max)	±20 V	±30 V	Substitute provides wider gate voltage range
Input Capacitance (Ciss Max) @ Vds	5800 pF @ 25V	10470 pF @ 50V	Substitute has higher input capacitance
Power Dissipation (Max)	714 W (Tc)	517 W (Tc)	Substitute has lower rated dissipation
Operating Temperature Range	-55 to 175 °C (TJ)	-55 to 175 °C (TJ)	Equivalent
Mounting Type	Through Hole	Through Hole	Compatible
Package Type	TO-3P	TO-247AC	Different package; both through-hole
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Equivalent
Product Status	Active	Active	Both in active production

Engineering Selection Recommendations

Electrical Compatibility: The IRFP4568PBF substitute part meets the core voltage and current requirements of the IXTQ150N15P application. Both devices are rated for 150V Vdss and support continuous drain currents at or above 150A. The substitute part's higher current rating (171A) provides operational margin above the primary part's 150A specification.

On-State Performance: The IRFP4568PBF exhibits lower on-state resistance (5.9 mOhm) compared to the IXTQ150N15P (13 mOhm), resulting in reduced conduction losses and improved efficiency in switching applications.

Gate Drive Considerations: Both parts share identical gate threshold voltage specifications (5V @ 250µA), ensuring compatible gate drive circuit design. The IRFP4568PBF requires higher gate charge (227 nC versus 190 nC), which may necessitate verification of gate drive current capacity in existing circuit designs.

Thermal Management: The IXTQ150N15P provides higher maximum power dissipation rating (714W) compared to the IRFP4568PBF (517W). Circuit thermal design must account for this difference when selecting between these parts.

Package Considerations: The IXTQ150N15P uses TO-3P packaging while the IRFP4568PBF uses TO-247AC packaging. Both are through-hole configurations but have different mechanical footprints and mounting hole patterns. PCB layout modification is required for substitution.

Regulatory Compliance: Both parts maintain active product status, RoHS3 compliance, REACH unaffected status, and EAR99 ECCN classification, ensuring equivalent regulatory standing for procurement and deployment.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4568PBF directly replace the IXTQ150N15P without circuit modification?

A: The IRFP4568PBF meets the electrical specifications for voltage, current, and gate control characteristics. However, the different package type (TO-247AC versus TO-3P) requires PCB layout modification. Gate drive circuits must be verified to supply the higher gate charge requirement (227 nC versus 190 nC).

Q: What is the significance of the lower on-state resistance in the IRFP4568PBF?

A: Lower on-state resistance (5.9 mOhm versus 13 mOhm) reduces conduction losses during the on-state, resulting in lower heat generation and improved overall circuit efficiency. This characteristic makes the IRFP4568PBF suitable for applications where thermal management is critical.

Q: Does the higher gate charge of the IRFP4568PBF affect gate drive circuit design?

A: The IRFP4568PBF requires 227 nC of gate charge compared to 190 nC for the IXTQ150N15P. Gate drive circuits must supply sufficient current to charge the gate within the required switching time. Existing gate drive circuits designed for the IXTQ150N15P must be evaluated to confirm adequate current capacity.

Q: Are there package compatibility issues when substituting the IRFP4568PBF for the IXTQ150N15P?

A: Yes. The IXTQ150N15P uses TO-3P packaging while the IRFP4568PBF uses TO-247AC packaging. Both are through-hole configurations but have different mechanical dimensions, mounting hole spacing, and lead configurations. PCB redesign is required for physical substitution.

Q: How does the higher input capacitance of the IRFP4568PBF impact circuit performance?

A: The IRFP4568PBF has higher input capacitance (10470 pF @ 50V versus 5800 pF @ 25V). This increases the capacitive load on the gate drive circuit, potentially affecting switching speed and gate drive power consumption. Gate drive circuit performance should be verified under actual operating conditions.

Q: What is the thermal implication of the lower power dissipation rating in the IRFP4568PBF?

A: The IRFP4568PBF has a maximum power dissipation rating of 517W compared to 714W for the IXTQ150N15P. While the lower on-state resistance reduces conduction losses, the lower dissipation rating indicates different thermal characteristics. Thermal design calculations must account for this specification when selecting between these parts.

Q: Are both parts suitable for the same operating temperature range?

A: Yes. Both the IXTQ150N15P and IRFP4568PBF operate across the identical temperature range of -55°C to 175°C (TJ), ensuring equivalent thermal performance specifications across the full operating envelope.

Q: Do both parts meet the same regulatory compliance requirements?

A: Yes. Both parts are RoHS3 compliant, REACH unaffected, and classified as EAR99 under ECCN regulations. Both maintain active product status with unlimited moisture sensitivity rating (MSL 1), ensuring equivalent regulatory standing for procurement and deployment.

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