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IXTP90N075T2 N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IXTP90N075T2 is an N-Channel 75V 90A MOSFET manufactured by IXYS in the TrenchT2™ series, housed in a TO-220-3 through-hole package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production support. The part delivers 180W maximum power dissipation at case temperature and operates across the industrial temperature range of -55°C to 175°C.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 75 | V |
| Continuous Drain Current (Id) @ 25°C | 90 | A (Tc) |
| On-State Resistance (Rds On) @ 25A, 10V | 10 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 54 | nC |
| Input Capacitance (Ciss) @ 25V | 3290 | pF |
| Power Dissipation (Max) | 180 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-220-3 | Through Hole |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitution of the IXTP90N075T2 is determined by the following critical electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain to Source Voltage (Vdss): 75V or higher
- Continuous Drain Current (Id): 90A or higher at case temperature
- On-State Resistance (Rds On): 10mOhm or lower at specified gate voltage
- Package Type: TO-220-3 through-hole configuration
- Operating Temperature Range: -55°C to 175°C minimum
- Gate Threshold Voltage: Compatible with 10V drive voltage
Secondary Compatibility Factors:
- Gate Charge (Qg): Lower values preferred for faster switching
- Input Capacitance (Ciss): Lower values reduce gate drive requirements
- Power Dissipation: 180W or higher at case temperature
- RoHS and regulatory compliance alignment
Substitute parts are grouped into two categories: Direct Voltage Class Substitutes (75V rated) and Lower Voltage Alternatives (60V rated, suitable only where application voltage permits). Lower voltage devices offer superior current handling and reduced on-state resistance but require circuit voltage verification before selection.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ Tc (A) | Rds On (mOhm) | Qg (nC) | Ciss (pF) | Pd Max (W) | Status | Package |
|---|---|---|---|---|---|---|---|---|---|
| IXTP90N075T2 | IXYS | 75 | 90 | 10 @ 25A, 10V | 54 @ 10V | 3290 @ 25V | 180 | Obsolete | TO-220-3 |
| IRFB3607PBF | Infineon | 75 | 80 | 9 @ 46A, 10V | 84 @ 10V | 3070 @ 50V | 140 | Not For New Designs | TO-220-3 |
| STP75NF75 | STMicroelectronics | 75 | 80 | 11 @ 40A, 10V | 160 @ 10V | 3700 @ 25V | 300 | Active | TO-220-3 |
| AOT470 | Alpha & Omega Semiconductor | 75 | 100 | 10.5 @ 30A, 10V | 136 @ 10V | 5640 @ 30V | 268 | Active | TO-220-3 |
| STP100N8F6 | STMicroelectronics | 80 | 100 | 9 @ 50A, 10V | 100 @ 10V | 5955 @ 25V | 176 | Active | TO-220-3 |
| CSD18534KCS | Texas Instruments | 60 | 100 | 9.5 @ 40A, 10V | 24 @ 10V | 1880 @ 30V | 107 | Active | TO-220-3 |
| DMNH6008SCT | Diodes Incorporated | 60 | 130 | 8 @ 20A, 10V | 21 @ 10V | 2596 @ 30V | 210 | Active | TO-220-3 |
| DMNH6008SCTQ | Diodes Incorporated | 60 | 130 | 8 @ 20A, 10V | 21 @ 10V | 2596 @ 30V | 210 | Active | TO-220-3 |
| IRL3705ZPBF | International Rectifier | 55 | 75 | 8 @ 52A, 10V | 60 @ 5V | 2880 @ 25V | 130 | Active | TO-220-3 |
| IRL3705NPBF | Infineon | 55 | 89 | 10 @ 46A, 10V | 98 @ 5V | 3600 @ 25V | 170 | Active | TO-220-3 |
| IRL2505PBF | Infineon | 55 | 104 | 8 @ 54A, 10V | 130 @ 5V | 5000 @ 25V | 200 | Not For New Designs | TO-220-3 |
Engineering Selection Recommendations
Primary Recommendation: STP75NF75 (STMicroelectronics)
The STP75NF75 is the preferred direct substitute for the IXTP90N075T2. Both devices share identical 75V Vdss rating and TO-220-3 package configuration. The STP75NF75 maintains 80A continuous drain current, comparable on-state resistance of 11mOhm, and superior power dissipation capability at 300W. The device carries Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating. Inventory availability exceeds 364,000 units, ensuring supply continuity.
Secondary Recommendation: AOT470 (Alpha & Omega Semiconductor)
The AOT470 provides enhanced current handling at 100A continuous drain current while maintaining the 75V voltage class. On-state resistance of 10.5mOhm remains within acceptable tolerance of the original specification. Power dissipation reaches 268W at case temperature. Active product status and extensive inventory (15,100 units) support production requirements. This device is suitable for applications where higher current capacity provides design margin.
Alternative for Voltage-Flexible Applications: DMNH6008SCT / DMNH6008SCTQ (Diodes Incorporated)
For applications where 60V operation is acceptable, the DMNH6008 series offers superior electrical performance with 130A continuous drain current and 8mOhm on-state resistance. Both standard and automotive-qualified (AEC-Q101) variants are available. The automotive-qualified DMNH6008SCTQ is recommended for automotive and industrial applications requiring formal qualification documentation. Power dissipation of 210W supports thermal requirements. Active status and strong inventory levels (2,000+ units) ensure availability.
Lower Voltage Alternative: CSD18534KCS (Texas Instruments NexFET™)
The CSD18534KCS operates at 60V Vdss and delivers 100A continuous drain current with 9.5mOhm on-state resistance. Gate charge of only 24nC provides superior switching performance compared to the original device. Input capacitance of 1,880pF is significantly lower, reducing gate drive power requirements. Active product status with 10,265 units in inventory supports new designs. This device is suitable for 60V-rated applications where switching efficiency is prioritized.
Devices Not Recommended for New Designs:
IRFB3607PBF and IRL2505PBF carry "Not For New Designs" status and should be avoided for new product development despite electrical compatibility. These devices remain available for legacy system support and repair applications only.
Frequently Asked Questions (FAQ)
Q: Can the STP75NF75 directly replace the IXTP90N075T2 without circuit modifications?
A: Yes. Both devices share identical 75V Vdss rating, TO-220-3 package, and compatible gate threshold voltage specifications. The STP75NF75 maintains equivalent on-state resistance and operates across the same temperature range. No circuit modifications are required for direct substitution in existing designs.
Q: What is the difference between the DMNH6008SCT and DMNH6008SCTQ variants?
A: Both devices are electrically identical with 60V Vdss, 130A continuous drain current, and 8mOhm on-state resistance. The DMNH6008SCTQ carries AEC-Q101 automotive qualification, making it suitable for automotive applications requiring formal qualification documentation. The standard DMNH6008SCT is appropriate for industrial and general-purpose applications.
Q: Can I use a 60V-rated device in a 75V application?
A: No. Devices rated at 60V Vdss (CSD18534KCS, DMNH6008SCT, DMNH6008SCTQ, IRL3705ZPBF, IRL3705NPBF, IRL2505PBF) must not be used in circuits where the drain-source voltage may exceed 60V. Exceeding the Vdss rating causes device failure. Use only 75V or higher-rated devices for 75V applications.
Q: Why does the AOT470 show higher gate charge than the IXTP90N075T2?
A: The AOT470 exhibits 136nC gate charge compared to 54nC for the IXTP90N075T2. This reflects the AOT470's higher current capability (100A vs. 90A) and larger die size. Higher gate charge requires proportionally greater gate drive current but does not prevent substitution. Gate drive circuits must be verified for adequate current sourcing capability.
Q: Is the STP100N8F6 suitable as a substitute despite its 80V rating?
A: The STP100N8F6 operates at 80V Vdss, which exceeds the original 75V specification. This provides additional voltage margin and is acceptable for 75V applications. The device delivers 100A continuous drain current and 9mOhm on-state resistance, both superior to the original specification. Active product status and high inventory availability (105,100 units) support production use.
Q: What is the significance of the "Not For New Designs" status on IRFB3607PBF and IRL2505PBF?
A: "Not For New Designs" indicates that the manufacturer has discontinued active development and recommends alternative devices for new product development. These devices remain available for legacy system support and repair applications. For new designs, select devices with "Active" product status such as STP75NF75, AOT470, or CSD18534KCS.
Q: How do I determine which substitute is best for my application?
A: Selection depends on three factors: (1) Required drain-source voltage—use 75V or higher-rated devices for 75V applications; (2) Required continuous drain current—select devices rated at or above 90A; (3) Thermal requirements—verify that power dissipation capability meets application needs. The STP75NF75 satisfies all criteria for direct replacement. For enhanced current capability, select AOT470. For 60V applications, select DMNH6008SCT or CSD18534KCS based on switching performance requirements.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed carry RoHS3 compliance certification. The original IXTP90N075T2 also maintains RoHS3 compliance. All devices are suitable for applications requiring RoHS compliance.
Q: What is the difference between TO-220 and TO-220-3 package designations?
A: TO-220 and TO-220-3 refer to the same three-lead through-hole package configuration. Both designations are equivalent and interchangeable. All substitute parts in this reference use the TO-220-3 package, ensuring mechanical compatibility with the original device.
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