IXTP8N70X2M N-Channel 700V 4A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP8N70X2M is an N-Channel MOSFET manufactured by IXYS in the Ultra X2 series, rated for 700V drain-to-source voltage with 4A continuous drain current at 25°C. The device is packaged in TO-220 Isolated Tab configuration and is designed for through-hole mounting applications requiring high-voltage switching capability. This part maintains Active product status with 736 units in current inventory.

Substitute parts are identified based on functional equivalence within the N-Channel MOSFET category, maintaining compatibility with TO-220 package configurations and operating temperature ranges. Substitution becomes necessary when the primary part reaches end-of-life status, inventory constraints occur, or design requirements permit operation within the electrical parameter ranges of alternative devices.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	700	V
Current - Continuous Drain (Id) @ 25°C	4	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	550 mOhm @ 500 mA, 10V	—
Vgs(th) (Max) @ Id	5	V @ 250 µA
Gate Charge (Qg) (Max) @ Vgs	12	nC @ 10 V
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	800	pF @ 10 V
Power Dissipation (Max)	32	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack, Isolated Tab	—
RoHS Status	ROHS3 Compliant	—
Product Status	Active	—

Substitute Part Grouping Explanation

Substitute parts for the IXTP8N70X2M are selected based on the following substitution criteria:

Primary Electrical Parameters:

FET Type: N-Channel (mandatory match)
Package Configuration: TO-220 through-hole mounting (mandatory match)
Operating Temperature Range: -55°C to 150°C (mandatory match)
Drain-to-Source Voltage (Vdss): 600V to 800V (acceptable range for applications designed for 700V operation)
Continuous Drain Current (Id): 4A minimum (devices rated 4A or higher are functionally equivalent)
Gate Threshold Voltage (Vgs(th)): 4V to 5V @ 250µA (compatible gate drive characteristics)
Maximum Gate Voltage (Vgs): ±25V to ±30V (compatible gate voltage ratings)

Secondary Compliance Parameters:

RoHS3 Compliance (mandatory match)
REACH Unaffected status (mandatory match)
Moisture Sensitivity Level (MSL): 1 (Unlimited) preferred

Substitute parts are grouped into two categories: Direct Voltage Equivalents (600V-650V rated devices suitable for applications where 700V rating is not critical) and Higher Voltage Equivalents (800V rated devices providing enhanced voltage margin). All substitute parts maintain N-Channel MOSFET topology, TO-220 package configuration, and compatible gate drive voltage specifications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Vgs Max (V)	Power Dissipation (W)	Package	Product Status
IXTP8N70X2M	IXYS	700	4	550 @ 500mA, 10V	5 @ 250µA	12 @ 10V	±30	32	TO-220-3	Active
FCP7N60	onsemi	600	7	600 @ 3.5A, 10V	5 @ 250µA	30 @ 10V	±30	83	TO-220-3	Not For New Designs
STP10N60M2	STMicroelectronics	600	7.5	600 @ 3A, 10V	4 @ 250µA	13.5 @ 10V	±25	85	TO-220-3	Active
STP10NM60N	STMicroelectronics	600	10	550 @ 4A, 10V	4 @ 250µA	19 @ 10V	±25	70	TO-220-3	Active
STP10NM60ND	STMicroelectronics	600	8	600 @ 4A, 10V	5 @ 250µA	20 @ 10V	±25	70	TO-220-3	Obsolete
STP11N60DM2	STMicroelectronics	600	10	420 @ 5A, 10V	5 @ 250µA	16.5 @ 10V	±25	110	TO-220-3	Active
STP11NM60FD	STMicroelectronics	600	11	450 @ 5.5A, 10V	5 @ 250µA	40 @ 10V	±30	160	TO-220-3	Active
STP12N65M5	STMicroelectronics	650	8.5	430 @ 4.3A, 10V	5 @ 250µA	22 @ 10V	±25	70	TO-220-3	Active
STP13N80K5	STMicroelectronics	800	12	450 @ 6A, 10V	5 @ 100µA	29 @ 10V	±30	190	TO-220-3	Active

Engineering Selection Recommendations

Active Product Status Preference: Substitute parts with Active product status are preferred for new designs and ongoing production. The following parts maintain Active status and full manufacturer support:

STP10N60M2 (STMicroelectronics): 600V, 7.5A, Active status. Suitable for applications where 700V rating is not critical and higher current capability is beneficial.
STP10NM60N (STMicroelectronics): 600V, 10A, Active status. Provides equivalent Rds On performance with higher current rating.
STP11N60DM2 (STMicroelectronics): 600V, 10A, Active status. Lower Rds On (420 mOhm) provides improved efficiency.
STP11NM60FD (STMicroelectronics): 600V, 11A, Active status. Higher power dissipation capability (160W) for demanding applications.
STP12N65M5 (STMicroelectronics): 650V, 8.5A, Active status. Intermediate voltage rating between 600V and 700V.
STP13N80K5 (STMicroelectronics): 800V, 12A, Active status. Higher voltage margin for applications requiring enhanced overvoltage protection.

Compliance Verification: All recommended substitute parts maintain ROHS3 compliance and REACH Unaffected status, matching the regulatory requirements of the IXTP8N70X2M. Moisture Sensitivity Level (MSL) 1 (Unlimited) is maintained across all substitute options.

Obsolete Part Avoidance: The STP10NM60ND (Obsolete status) should not be selected for new designs or long-term production applications despite electrical compatibility.

Not For New Designs Status: The FCP7N60 (onsemi) carries "Not For New Designs" status and should be used only for legacy system maintenance or repair applications where the original part specification is mandatory.

Frequently Asked Questions (FAQ)

Q: Can the IXTP8N70X2M be directly replaced with a 600V-rated substitute?

A: Yes, provided the application circuit design does not require the full 700V voltage margin. Devices rated 600V, 650V, or 800V are electrically compatible with the IXTP8N70X2M when gate drive voltage, continuous current requirements, and thermal dissipation specifications are satisfied. The 600V-rated substitutes (STP10N60M2, STP10NM60N, STP11N60DM2, STP11NM60FD) are suitable for applications where transient overvoltage protection is provided by external circuitry or where the maximum operating voltage does not exceed 600V.

Q: What is the significance of the Rds On parameter in selecting a substitute?

A: Rds On (on-state resistance) directly affects power dissipation and thermal performance. The IXTP8N70X2M specifies 550 mOhm @ 500 mA, 10V. Substitute parts with lower Rds On values (such as STP11N60DM2 at 420 mOhm) reduce conduction losses and heat generation, improving efficiency. Substitute parts with higher Rds On values increase power dissipation and may require enhanced thermal management. Selection depends on the application's current profile and thermal budget.

Q: Are all substitute parts compatible with the same PCB layout and thermal management design?

A: All substitute parts use the TO-220-3 package configuration and are mechanically compatible with existing PCB layouts designed for the IXTP8N70X2M. However, power dissipation varies significantly across substitutes (32W for IXTP8N70X2M to 190W for STP13N80K5). Applications utilizing higher-power-dissipation substitutes may require enhanced heatsinking or thermal interface materials to maintain junction temperature within the -55°C to 150°C operating range.

Q: What is the impact of gate charge (Qg) differences on circuit performance?

A: Gate charge affects the speed and energy required to switch the MOSFET on and off. The IXTP8N70X2M specifies 12 nC @ 10V, while substitutes range from 13.5 nC to 40 nC. Higher gate charge values require longer switching times and increased gate driver current capability. Applications with high-frequency switching or current-limited gate drivers may experience performance degradation with substitutes having significantly higher gate charge. Verify gate driver specifications before selecting substitutes with Qg values exceeding 25 nC.

Q: Can the STP13N80K5 (800V) be used in place of the IXTP8N70X2M (700V)?

A: Yes. The STP13N80K5 provides a higher voltage rating (800V) and is suitable for applications where enhanced overvoltage margin is beneficial. The 800V rating does not degrade performance in 700V applications; it provides additional protection against transient overvoltage events. However, the STP13N80K5 exhibits higher gate charge (29 nC) and significantly higher power dissipation capability (190W), requiring verification of gate driver compatibility and thermal management adequacy.

Q: Why is the FCP7N60 marked "Not For New Designs"?

A: The "Not For New Designs" status indicates that the manufacturer (onsemi) has designated this part for legacy support only. While the FCP7N60 remains electrically compatible with the IXTP8N70X2M, it should not be selected for new product development or long-term production applications. This status typically reflects manufacturer transition to newer technology generations or product line consolidation. Use FCP7N60 only for repair and maintenance of existing systems where the original part specification is mandatory.

Q: What is the difference between TO-220 and TO-220-3 package designations?

A: TO-220 and TO-220-3 refer to the same three-lead through-hole package configuration used for power MOSFETs. The "3" designation explicitly indicates three leads (Gate, Drain, Source). The IXTP8N70X2M specifies "TO-220-3 Full Pack, Isolated Tab," indicating the drain tab is electrically isolated from the mounting surface. All substitute parts use standard TO-220-3 configuration and are mechanically interchangeable.

Q: How should I verify thermal compatibility when substituting to a higher-power-dissipation device?

A: Calculate the junction temperature (Tj) using the formula: Tj = Ta + (Pd × θJA), where Ta is ambient temperature, Pd is power dissipation, and θJA is the thermal resistance from junction to ambient. Ensure the calculated Tj remains within the -55°C to 150°C operating range. If the original design uses a heatsink, verify that the heatsink's thermal resistance is adequate for the substitute part's maximum power dissipation. Consult the substitute part's datasheet for thermal resistance specifications and derating curves.

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