IXTP8N65X2 N-Channel MOSFET 650V 8A TO-220 Equivalent & Substitute Parts

Part Overview

The IXTP8N65X2 is an N-Channel MOSFET manufactured by IXYS in the Ultra X2 series, rated for 650V drain-to-source voltage and 8A continuous drain current at 25°C. This device is packaged in a TO-220-3 through-hole configuration and is designed for high-voltage switching applications requiring moderate current handling and thermal management up to 150W. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified when alternative MOSFETs meet or exceed the electrical performance requirements while maintaining compatible mechanical packaging and thermal characteristics. Substitution analysis focuses on drain-to-source voltage rating, continuous drain current capacity, on-resistance characteristics, gate charge, and thermal dissipation limits.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Current - Continuous Drain (Id) @ 25°C	8	A (Tc)
Rds On (Max) @ Id, Vgs	500	mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs	12	nC @ 10V
Power Dissipation (Max)	150	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-220-3	Through Hole
Vgs(th) (Max) @ Id	5	V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds	800	pF @ 25V

Substitute Part Grouping Explanation

Substitute parts for the IXTP8N65X2 are identified based on the following substitution criteria:

Voltage Rating Compatibility: Substitute devices must have a Vdss rating equal to or greater than 650V to ensure safe operation in the same circuit topology without voltage stress.

Current Capacity: Substitute devices must support continuous drain current (Id) at or above 8A at 25°C to handle equivalent or higher load conditions.

On-Resistance Performance: Rds(on) characteristics must be comparable or superior to enable equivalent or improved efficiency and thermal performance.

Gate Charge: Gate charge values determine switching speed and driver requirements; substitutes with similar or lower gate charge maintain compatible gate drive circuits.

Thermal Dissipation: Power dissipation rating must support the thermal load of the application; higher ratings provide design margin.

Package Compatibility: All substitutes must use TO-220-3 through-hole packaging to ensure mechanical and thermal interface compatibility.

Compliance and Status: All substitute parts must maintain Active product status and RoHS3 compliance to ensure long-term availability and regulatory alignment.

Parameter Comparison

Parameter	IXTP8N65X2 (Main)	STP13N80K5 (Substitute)	Unit
Manufacturer	IXYS	STMicroelectronics	—
Series	Ultra X2	SuperMESH5™	—
Drain to Source Voltage (Vdss)	650	800	V
Current - Continuous Drain (Id) @ 25°C	8	12	A (Tc)
Rds On (Max) @ Id, Vgs	500 @ 4A, 10V	450 @ 6A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	12 @ 10V	29 @ 10V	nC
Power Dissipation (Max)	150	190	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Vgs(th) (Max) @ Id	5 @ 250µA	5 @ 100µA	V
Input Capacitance (Ciss) (Max) @ Vds	800 @ 25V	870 @ 100V	pF
Package / Case	TO-220-3	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Product Status	Active	Active	—

Engineering Selection Recommendations

STP13N80K5 as Primary Substitute:

The STP13N80K5 from STMicroelectronics qualifies as a direct substitute for the IXTP8N65X2 based on the following engineering criteria:

Voltage Margin: The STP13N80K5 provides 800V Vdss rating, exceeding the 650V requirement by 150V. This higher voltage rating ensures safe operation in circuits designed for the IXTP8N65X2 without voltage derating concerns.

Current Capacity: The STP13N80K5 delivers 12A continuous drain current, surpassing the 8A specification of the IXTP8N65X2. This increased current capacity accommodates higher load demands or provides design margin for thermal management.

On-Resistance: The STP13N80K5 exhibits 450mOhm on-resistance at 6A and 10V gate voltage, compared to 500mOhm at 4A and 10V for the IXTP8N65X2. Superior on-resistance reduces conduction losses and improves overall circuit efficiency.

Thermal Performance: The STP13N80K5 supports 190W maximum power dissipation, exceeding the 150W rating of the IXTP8N65X2 by 40W. Enhanced thermal capacity provides additional design margin for high-frequency or high-current switching applications.

Package Compatibility: Both devices use identical TO-220-3 through-hole packaging, ensuring direct mechanical and thermal interface compatibility without PCB redesign.

Compliance Alignment: Both parts maintain Active product status, RoHS3 compliance, and unlimited moisture sensitivity rating (MSL 1), ensuring regulatory alignment and long-term supply continuity.

Gate Charge Consideration: The STP13N80K5 exhibits higher gate charge (29nC versus 12nC), requiring verification that existing gate drive circuits provide sufficient current and voltage to meet switching speed requirements in the target application.

Frequently Asked Questions (FAQ)

Q: Can the STP13N80K5 be used as a direct replacement for the IXTP8N65X2 in existing designs?

A: The STP13N80K5 is electrically compatible for applications designed around the IXTP8N65X2 specifications. Both devices share identical TO-220-3 packaging and operating temperature range. However, the higher gate charge of the STP13N80K5 (29nC versus 12nC) may require gate drive circuit evaluation to ensure adequate switching speed. Verify that the gate driver provides sufficient current at the required switching frequency.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are voltage rating (800V versus 650V), current capacity (12A versus 8A), on-resistance (450mOhm versus 500mOhm), power dissipation (190W versus 150W), and gate charge (29nC versus 12nC). The STP13N80K5 offers higher performance margins across all parameters, making it suitable for applications requiring enhanced thermal or electrical headroom.

Q: Does the higher gate charge of the STP13N80K5 affect circuit performance?

A: Gate charge directly influences switching speed and gate drive power consumption. The STP13N80K5 requires approximately 2.4 times more gate charge than the IXTP8N65X2. In high-frequency applications, this may increase switching losses and gate driver current demand. Evaluate gate driver specifications to confirm compatibility with the higher gate charge requirement.

Q: Are both parts suitable for the same thermal management approach?

A: Both devices use TO-220-3 packaging with identical mechanical interfaces, allowing the same heatsink and thermal management strategy. However, the STP13N80K5 supports higher power dissipation (190W versus 150W), providing additional thermal margin. Existing thermal designs for the IXTP8N65X2 remain valid for the STP13N80K5 with improved thermal performance.

Q: What compliance certifications apply to both parts?

A: Both the IXTP8N65X2 and STP13N80K5 are RoHS3 compliant, REACH unaffected, and classified under ECCN EAR99. Both maintain Active product status, ensuring regulatory alignment and supply continuity. Moisture sensitivity level (MSL 1) indicates unlimited shelf life under standard storage conditions.

Q: Can the STP13N80K5 be used in lower-voltage applications originally designed for the IXTP8N65X2?

A: Yes. The STP13N80K5 is rated for 800V operation, making it suitable for any application operating at or below 650V. The higher voltage rating does not degrade performance in lower-voltage circuits; it simply provides additional voltage margin and design flexibility.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message