IXTP8N50PM N-Channel 500V 4A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP8N50PM is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage and 4A continuous drain current in a Through Hole TO-220-3 package. This device is classified as Obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement.

The IXTP8N50PM belongs to the PolarHV™ series and is designed for high-voltage switching applications requiring 500V blocking capability with moderate current handling. Due to its obsolete status, alternative components with compatible electrical and mechanical characteristics are required for new procurement and design continuity.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	500	V
Current - Continuous Drain (Id) @ 25°C	4	A
Rds On (Max) @ Id, Vgs	800	mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	5.5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20	nC @ 10V
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	1050	pF @ 25V
Power Dissipation (Max)	41	W
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the IXTP8N50PM is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must be ≥500V to maintain blocking capability
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Mounting Type: Must be Through Hole
Package: Must be TO-220-3 or compatible TO-220 variant
Operating Temperature Range: Must support -55°C to 150°C (TJ)
Gate Voltage (Vgs Max): Must support ±30V or greater

Secondary Compatibility Parameters:

Current - Continuous Drain (Id): Substitute parts may exceed 4A rating; lower ratings are not acceptable
Rds On (Max): Substitute parts with lower on-resistance are acceptable; higher values require thermal analysis
Gate Charge (Qg): Lower values are acceptable; higher values require driver capability verification
Input Capacitance (Ciss): Variations are acceptable within driver capability limits
Power Dissipation (Max): Higher ratings provide thermal margin; lower ratings require thermal analysis

Substitute parts are grouped based on voltage class (500V or higher), current capability (4A or higher), and package compatibility (TO-220 family).

Parameter Comparison

Parameter	IXTP8N50PM	IXTP12N65X2M	AOT9N50	IRF840LC	STP8NM50N
Manufacturer	IXYS	IXYS	Alpha & Omega Semiconductor Inc.	Vishay Siliconix	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V	650V	500V	500V	500V
Current - Continuous Drain (Id) @ 25°C	4A	12A	9A	8A	5A
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	800mOhm @ 4A, 10V	300mOhm @ 6A, 10V	850mOhm @ 4.5A, 10V	850mOhm @ 4.8A, 10V	790mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA	4.5V @ 250µA	4.5V @ 250µA	4V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V	17.7nC @ 10V	28nC @ 10V	39nC @ 10V	14nC @ 10V
Vgs (Max)	±30V	±30V	±30V	±30V	±25V
Input Capacitance (Ciss) (Max) @ Vds	1050pF @ 25V	1100pF @ 25V	1042pF @ 25V	1100pF @ 25V	364pF @ 50V
Power Dissipation (Max)	41W	40W	192W	125W	45W
Operating Temperature	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3 Full Pack, Isolated Tab	TO-220-3	TO-220-3	TO-220-3
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

IXTP12N65X2M (IXYS Ultra X2 Series)

The IXTP12N65X2M is an Active product offering higher voltage (650V) and current (12A) ratings compared to the IXTP8N50PM. This part is ROHS3 Compliant and maintains the same operating temperature range. The isolated tab variant of the TO-220 package provides thermal and isolation advantages. Selection of this part is appropriate for applications requiring higher voltage margin or increased current capacity. The lower on-resistance (300mOhm @ 6A, 10V) and reduced gate charge (17.7nC) provide improved switching efficiency.

AOT9N50 (Alpha & Omega Semiconductor Inc.)

The AOT9N50 maintains the same 500V voltage rating and provides 9A continuous drain current, exceeding the IXTP8N50PM specification. This part is classified as Not For New Designs, limiting its suitability for new development. The significantly higher power dissipation rating (192W) indicates enhanced thermal capability. ROHS3 Compliance is confirmed. This part is suitable for replacement applications where existing designs can accommodate the higher current rating.

IRF840LC (Vishay Siliconix)

The IRF840LC is an Active product rated for 500V and 8A continuous drain current, providing a 2x current margin over the IXTP8N50PM. The TO-220AB package is mechanically compatible. This part is RoHS non-compliant, which may restrict use in regulated applications. The higher gate charge (39nC) and power dissipation (125W) indicate different switching characteristics. Selection is appropriate for applications where RoHS compliance is not required and higher current capacity is beneficial.

STP8NM50N (STMicroelectronics MDmesh™ II Series)

The STP8NM50N maintains the same 500V voltage rating with 5A continuous drain current, providing minimal current margin. This part is Active and ROHS3 Compliant. The significantly lower input capacitance (364pF @ 50V) compared to the IXTP8N50PM indicates improved high-frequency switching performance. The reduced gate charge (14nC) provides lower driver power requirements. The maximum gate voltage specification (±25V) is 5V lower than the IXTP8N50PM, requiring verification in applications using higher gate drive voltages. Selection is appropriate for applications prioritizing switching efficiency and RoHS compliance.

Frequently Asked Questions (FAQ)

Q: Can the IXTP12N65X2M replace the IXTP8N50PM in all applications?

A: The IXTP12N65X2M has higher voltage (650V vs. 500V) and current (12A vs. 4A) ratings, making it suitable for applications where the IXTP8N50PM was used. The isolated tab variant provides additional thermal and isolation benefits. Verify that the application circuit can accommodate the different on-resistance and gate charge characteristics.

Q: What is the difference between the TO-220-3 and TO-220 Isolated Tab packages?

A: Both packages are Through Hole TO-220 variants with three leads. The Isolated Tab variant provides electrical isolation between the tab and the drain lead, enabling independent thermal management. Standard TO-220-3 packages have the tab connected to the drain. Mechanical compatibility is maintained; verify PCB layout and thermal design requirements.

Q: Is the AOT9N50 suitable for new designs?

A: The AOT9N50 is classified as Not For New Designs. This designation indicates the manufacturer does not recommend this part for new development. Use this part only for replacement or continuation of existing designs. For new designs, select from Active status parts: IXTP12N65X2M, IRF840LC, or STP8NM50N.

Q: Why does the STP8NM50N have a lower maximum gate voltage (±25V) than the IXTP8N50PM (±30V)?

A: The STP8NM50N is specified with a ±25V maximum gate voltage, which is 5V lower than the IXTP8N50PM. Applications using gate drive voltages above ±25V must verify compatibility or select an alternative part. The IXTP12N65X2M, AOT9N50, and IRF840LC all support ±30V gate voltage.

Q: What does RoHS compliance status mean for part selection?

A: RoHS (Restriction of Hazardous Substances) compliance indicates the part meets environmental regulations restricting lead, cadmium, mercury, and other hazardous materials. ROHS3 Compliant parts (IXTP12N65X2M, AOT9N50, STP8NM50N) are suitable for regulated applications. The IRF840LC is RoHS non-compliant and may not be acceptable in applications subject to RoHS requirements.

Q: Can I use a substitute part with lower on-resistance than the IXTP8N50PM?

A: Yes. Lower on-resistance values reduce power dissipation and heat generation, providing improved efficiency. All substitute parts listed have on-resistance values within acceptable ranges. Verify that the application circuit design accommodates the different switching characteristics and thermal behavior.

Q: What is the significance of gate charge (Qg) differences between these parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (STP8NM50N at 14nC) reduces driver power requirements and enables faster switching. Higher gate charge (IRF840LC at 39nC) requires more driver capability but may provide other performance benefits. Select based on driver circuit specifications and switching frequency requirements.

Q: Are all substitute parts available in the same packaging?

A: All substitute parts use Through Hole TO-220 family packages. The IXTP12N65X2M offers an Isolated Tab variant, while others use standard TO-220-3. Mechanical compatibility is maintained across all options. Verify PCB layout and thermal management design for the specific package variant selected.

Q: What is the operating temperature range difference for STP8NM50N?

A: The STP8NM50N specifies a maximum junction temperature of 150°C (TJ) without a minimum temperature specification in the provided data. The IXTP8N50PM specifies -55°C to 150°C (TJ). Verify the complete operating temperature range in the STP8NM50N datasheet if operation below room temperature is required.

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