IXTP86N20T N-Channel 200V 86A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP86N20T is an N-Channel MOSFET manufactured by IXYS, designed for high-current switching applications requiring 200V drain-to-source voltage capability. This device operates in the Trench series and is rated for continuous drain current of 86A at 25°C with maximum power dissipation of 480W. The component is mounted in a TO-220-3 through-hole package and maintains Active product status with full RoHS3 compliance.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining compatible mechanical packaging and thermal characteristics. Alternative devices may be required due to inventory availability, supply chain considerations, or application-specific thermal management requirements.

Substiute Parts

IXTP86N20T

IXYSIn Stock: 1374IXTP86N20T Datasheet

Current PartRFQ

IRFB4227PBF

Infineon TechnologiesIn Stock: 34068IRFB4227PBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXTP86N20T is determined by the following critical parameters:

Voltage Rating: The substitute device must maintain a Drain to Source Voltage (Vdss) rating of 200V or greater to ensure safe operation in the target application circuit.

Current Capability: The continuous drain current rating must support the application requirements. Devices with lower current ratings may be acceptable in current-limited applications, while higher ratings provide design margin.

On-State Resistance (Rds On): Lower on-state resistance values indicate improved efficiency and reduced power dissipation during conduction. Substitute devices with comparable or lower Rds On values maintain thermal performance characteristics.

Gate Charge (Qg): Gate charge affects switching speed and driver circuit requirements. Comparable gate charge values ensure compatible gate drive circuitry.

Package Compatibility: The TO-220-3 through-hole package format must be maintained for mechanical and thermal interface compatibility.

Thermal Rating: Power dissipation capability and operating temperature range must support the application thermal environment.

Compliance Status: RoHS3 compliance and REACH status must be maintained for regulatory requirements.

Parameter Comparison

Engineering Selection Recommendations

IRFB4227PBF Substitution Criteria

The IRFB4227PBF from Infineon Technologies qualifies as a functional substitute for the IXTP86N20T based on the following engineering parameters:

Both devices share identical Drain to Source Voltage (Vdss) ratings of 200V, ensuring equivalent voltage withstand capability in the target circuit topology.

The IRFB4227PBF exhibits lower on-state resistance (24 mOhm versus 29 mOhm), resulting in reduced conduction losses and improved thermal efficiency during operation.

Gate threshold voltage specifications are identical at 5V, ensuring compatible gate drive requirements and switching characteristics.

Gate charge values are comparable (98 nC versus 90 nC), maintaining compatibility with existing gate driver circuits.

Input capacitance values are nearly equivalent (4600 pF versus 4500 pF), preserving switching speed characteristics.

Both devices maintain RoHS3 compliance and Active product status, satisfying regulatory and supply chain continuity requirements.

Application Considerations

The IRFB4227PBF operates with a reduced continuous drain current rating of 65A compared to the IXTP86N20T's 86A specification. Applications requiring the full 86A continuous current capability must retain the IXTP86N20T.

The IRFB4227PBF exhibits lower maximum power dissipation (330W versus 480W), requiring thermal design verification in high-power applications.

The IRFB4227PBF operating temperature minimum is -40°C, compared to the IXTP86N20T's -55°C. Applications requiring operation below -40°C must use the IXTP86N20T.

Both devices utilize compatible TO-220 through-hole packages, permitting direct mechanical substitution on printed circuit boards.

Frequently Asked Questions (FAQ)

Q: Can the IRFB4227PBF replace the IXTP86N20T in all applications?

A: The IRFB4227PBF is functionally equivalent for applications requiring continuous drain current of 65A or less. Applications requiring the full 86A continuous current rating or operation below -40°C must use the IXTP86N20T. Thermal design verification is required for applications approaching the 330W power dissipation limit of the IRFB4227PBF.

Q: What are the key electrical differences between these devices?

A: The primary differences are continuous drain current (86A versus 65A), on-state resistance (29 mOhm versus 24 mOhm), maximum power dissipation (480W versus 330W), and minimum operating temperature (-55°C versus -40°C). Voltage ratings, gate threshold voltage, and gate charge specifications are equivalent.

Q: Are the packages mechanically compatible?

A: Both devices use TO-220 through-hole packages. The IXTP86N20T uses TO-220-3 and the IRFB4227PBF uses TO-220AB. These packages are mechanically compatible for printed circuit board mounting and thermal interface applications.

Q: Do both devices meet current compliance requirements?

A: Both the IXTP86N20T and IRFB4227PBF are RoHS3 compliant and REACH unaffected, satisfying current regulatory requirements for electronic component procurement.

Q: Which device should be selected for new designs?

A: Device selection depends on application current requirements, thermal environment, and operating temperature range. For applications requiring 65A or less continuous current with operating temperatures above -40°C, either device is acceptable. For applications requiring higher current capability or extended low-temperature operation, the IXTP86N20T is required.

Q: How do gate charge specifications affect circuit design?

A: Gate charge values of 90 nC and 98 nC are comparable and do not require gate driver circuit modifications. Both values fall within the typical range for TO-220 package MOSFETs and support standard gate driver implementations.