IXTP7N60PM N-Channel 600V 4A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP7N60PM is an N-Channel 600V 4A MOSFET manufactured by IXYS in the Polar™ series, housed in a TO-220-3 through-hole package. This device is classified as obsolete, indicating discontinued production and limited availability for new procurement. The part operates across a temperature range of -55°C to 150°C and dissipates a maximum of 41W at the case temperature. Due to its obsolete status, identification of functionally equivalent substitute components is necessary for design continuity and ongoing system support.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	4	A
On-State Resistance (Rds On) @ 3.5A, 10V	1.1	Ω
Gate Threshold Voltage (Vgs(th)) @ 100µA	5.5	V
Gate Charge (Qg) @ 10V	20	nC
Input Capacitance (Ciss) @ 25V	1180	pF
Power Dissipation (Max)	41	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXTP7N60PM is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 4A minimum at 25°C
Gate Drive Voltage: 10V
Package Type: TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower or equivalent values ensure thermal performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching speed
Power Dissipation: Adequate thermal handling capability

Substitute parts are grouped into two categories: Direct Equivalents (matching 600V/4A specifications) and Enhanced Alternatives (higher voltage or current ratings that maintain backward compatibility within the same package footprint).

Parameter Comparison

Parameter	IXTP7N60PM	STF6N62K3	STP7N60M2	AOT4N60	STP6N60M2	IRFBC40APBF	CDM22010-650 SL
Vdss (V)	600	620	600	600	600	600	650
Id @ 25°C (A)	4	5.5	5	4	4.5	6.2	10
Rds On (Ω)	1.1	1.28	0.95	2.2	1.2	1.2	1
Vgs(th) (V)	5.5	4.5	4	4.5	4	4	4
Qg (nC)	20	34	8.8	18	8	42	20
Ciss (pF)	1180	875	271	615	232	1036	1168
Power Dissipation (W)	41	30	60	104	60	125	156
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220FP	TO-220-3	TO-220-3	TO-220-3	TO-220AB	TO-220-3
Product Status	Obsolete	Active	Active	Not For New Designs	Active	Active	Obsolete
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Product Status):

STP7N60M2 (STMicroelectronics MDmesh™ II Plus) is the preferred substitute for new designs. This part maintains the 600V/5A rating with superior electrical characteristics: 0.95Ω on-state resistance (versus 1.1Ω), reduced gate charge of 8.8nC, and significantly lower input capacitance of 271pF. The device is ROHS3 compliant and carries active product status with 15,465 units in stock. The TO-220-3 package provides direct mechanical compatibility.

STF6N62K3 (STMicroelectronics SuperMESH3™) offers a 620V/5.5A rating with active product status and ROHS3 compliance. The 1.28Ω on-state resistance and 875pF input capacitance provide acceptable performance margins. Inventory availability is substantial at 23,490 units. The TO-220FP package variant requires verification of PCB footprint compatibility.

STP6N60M2 (STMicroelectronics MDmesh™ II Plus) provides 600V/4.5A operation with 1.2Ω on-state resistance and active product status. ROHS3 compliance and 1,300 units in stock support procurement continuity.

IRFBC40APBF (Vishay Siliconix) delivers 600V/6.2A with active product status and ROHS3 compliance. The 1.2Ω on-state resistance and TO-220AB package provide functional equivalence. REACH compliance status is affected; verify regulatory requirements for your application.

Alternative Substitutes (Higher Voltage Rating):

CDM22010-650 SL (Central Semiconductor) and STP7LN80K5 (STMicroelectronics) provide 650V and 800V ratings respectively, offering enhanced voltage margin. Both maintain TO-220-3 compatibility and -55°C to 150°C operating range. CDM22010-650 SL is obsolete; STP7LN80K5 is active with ROHS3 compliance.

Not Recommended for New Designs:

AOT4N60 (Alpha & Omega Semiconductor) carries "Not For New Designs" status despite matching 600V/4A specifications. This designation indicates manufacturer discontinuation trajectory and should be avoided for new product development.

IPP80R1K2P7XKSA1 and IPP80R900P7XKSA1 (Infineon CoolMOS™ P7) operate at 800V with reduced gate charge (11nC and 15nC respectively) but require verification of thermal management requirements due to higher voltage stress. Both are active and ROHS3 compliant.

Frequently Asked Questions (FAQ)

Q: Can I use a higher voltage-rated MOSFET as a substitute for the IXTP7N60PM?

A: Yes. Higher voltage ratings (650V, 800V) are backward compatible with 600V applications. The device will operate safely at lower voltage stress. Verify that the on-state resistance, gate charge, and thermal dissipation characteristics meet your circuit requirements. Higher voltage devices typically exhibit increased on-state resistance and input capacitance, which may affect switching performance.

Q: What is the significance of the TO-220FP package variant used by STF6N62K3?

A: The TO-220FP (Full Pack) is mechanically compatible with standard TO-220-3 footprints but features an isolated tab design. Verify your PCB layout accommodates the isolated tab configuration. If your design requires a standard TO-220-3 with connected tab, select STP7N60M2 or STP6N60M2 instead.

Q: Why is AOT4N60 marked "Not For New Designs" despite matching specifications?

A: This designation indicates the manufacturer has announced end-of-life for this product line. While the part may still be available, procurement risk increases over time. Active alternatives such as STP7N60M2 or STF6N62K3 provide superior long-term supply security.

Q: How do gate charge and input capacitance differences affect circuit performance?

A: Lower gate charge (Qg) reduces the energy required to switch the transistor, decreasing switching losses and improving efficiency. Lower input capacitance (Ciss) increases switching speed and reduces gate drive circuit complexity. STP7N60M2 exhibits significantly lower values (8.8nC gate charge, 271pF capacitance) compared to the IXTP7N60PM (20nC, 1180pF), resulting in faster switching and reduced power dissipation in high-frequency applications.

Q: Is RoHS3 compliance mandatory for my application?

A: RoHS3 compliance is required for products sold in the European Union and many other markets. All recommended active substitutes (STP7N60M2, STF6N62K3, STP6N60M2, IRFBC40APBF) are ROHS3 compliant. Verify your regional regulatory requirements before final component selection.

Q: What thermal considerations apply when selecting a substitute?

A: Power dissipation ratings vary significantly among substitutes (30W to 156W). Select a device with power dissipation equal to or greater than your circuit's calculated thermal load. Devices with lower on-state resistance (Rds On) generate less heat at the same current level. Verify that your PCB thermal design (copper area, heatsink attachment) accommodates the selected device's thermal characteristics.

Q: Can I directly replace IXTP7N60PM with IRFBC40APBF without circuit modifications?

A: Direct replacement is mechanically and electrically feasible. Both devices operate at 600V with similar gate threshold voltages and maximum gate voltage ratings. The IRFBC40APBF exhibits higher gate charge (42nC versus 20nC) and input capacitance (1036pF versus 1180pF), which may require gate drive circuit adjustment for optimal switching performance. Verify gate drive current capability before implementation.

Q: What is the difference between Tc (case temperature) and Ta (ambient temperature) ratings?

A: Tc (case temperature) ratings assume direct thermal contact with a heatsink and represent the device's true thermal capability. Ta (ambient temperature) ratings assume free-air operation without heatsinking. CDM22010-650 SL specifies 2W at Ta and 156W at Tc, indicating significant thermal performance improvement with proper heatsinking. For your application, use Tc ratings when heatsinking is implemented.

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