IXTP76N075T Equivalent & Substitute Parts

Part Overview

The IXTP76N075T is an N-Channel MOSFET manufactured by IXYS, rated for 75V drain-to-source voltage with 76A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is part of the TrenchMV™ series. The product status is obsolete, necessitating identification of equivalent and substitute components for ongoing applications and new designs. Substitute parts are selected based on matching or exceeding critical electrical parameters while maintaining compatible packaging and thermal characteristics.

Substiute Parts

IXTP76N075T
IXYSIn Stock: 50052IXTP76N075T Datasheet
IXTP76N075T
Current Part
IXTP70N075T2
IXYSIn Stock: 1021IXTP70N075T2 Datasheet
IXTP70N075T2
MFR Recommended
CSD18537NKCS
Texas InstrumentsIn Stock: 1607CSD18537NKCS Datasheet
CSD18537NKCS
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DMT6009LCT
Diodes IncorporatedIn Stock: 5339DMT6009LCT Datasheet
DMT6009LCT
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HUF75339P3
onsemiIn Stock: 28331HUF75339P3 Datasheet
HUF75339P3
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IRFZ44VZPBF
Infineon TechnologiesIn Stock: 2315IRFZ44VZPBF Datasheet
IRFZ44VZPBF
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IRFZ44ZPBF
Infineon TechnologiesIn Stock: 1486IRFZ44ZPBF Datasheet
IRFZ44ZPBF
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IRFZ48NPBF
Infineon TechnologiesIn Stock: 37484IRFZ48NPBF Datasheet
IRFZ48NPBF
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Key Parameters

Parameter IXTP76N075T Unit
Drain-to-Source Voltage (Vdss) 75 V
Continuous Drain Current (Id) @ 25°C 76 A (Tc)
On-Resistance (Rds On) @ 25A, 10V 12 mOhm
Gate Threshold Voltage (Vgs(th)) @ 50µA 4 V
Gate Charge (Qg) @ 10V 57 nC
Power Dissipation (Max) 176 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-220-3 Through Hole

Substitute Part Grouping Explanation

Substitution of the IXTP76N075T is determined by the following critical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
  • Continuous Drain Current (Id): Must equal or exceed 76A at 25°C
  • On-Resistance (Rds On): Should not significantly exceed 12mOhm at specified conditions
  • Package Type: Must be TO-220-3 through-hole configuration
  • Operating Temperature Range: Must support -55°C to 175°C minimum

Secondary Compatibility Factors:

  • Gate Charge (Qg) and Input Capacitance (Ciss) affect switching characteristics
  • Power Dissipation capability influences thermal performance
  • Gate Threshold Voltage (Vgs(th)) affects drive circuit compatibility

Parts are grouped into two categories:

Category 1 - Manufacturer Recommended Substitute: IXTP70N075T2 from IXYS maintains the same voltage rating (75V) with slightly reduced current rating (70A) and is the direct successor within the same manufacturer family.

Category 2 - Similar Performance Alternatives: Parts from other manufacturers (Infineon, onsemi, Texas Instruments, Diodes Incorporated) that provide comparable electrical performance within the TO-220-3 package, though with varying voltage and current ratings that require application-specific evaluation.

Parameter Comparison

Parameter IXTP76N075T IXTP70N075T2 HUF75339P3 IRFZ48NPBF IRFZ44VZPBF CSD18537NKCS DMT6009LCT Unit
Vdss 75 75 55 55 60 60 60 V
Id @ 25°C 76 70 75 64 57 50 37.2 A (Tc)
Rds On @ 10V 12 12 12 14 12 14 12 mOhm
Vgs(th) @ 250µA 4 4 4 4 4 3.5 2 V
Qg @ 10V 57 46 130 81 65 18 33.5 nC
Power Dissipation (Max) 176 150 200 130 92 94 25 W (Tc)
Operating Temp Range -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 150 -55 to 150 °C (TJ)
Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Active Active Active Not For New Designs Active Active

Engineering Selection Recommendations

Direct Replacement (Manufacturer Recommended):

IXTP70N075T2 is the primary substitute for IXTP76N075T. Both devices maintain 75V Vdss rating and are from the same manufacturer (IXYS). The IXTP70N075T2 has active product status and is available in production quantities. The current rating reduction from 76A to 70A requires verification against application maximum current requirements. The IXTP70N075T2 features lower gate charge (46 nC vs. 57 nC), which improves switching performance. RoHS3 compliance and REACH unaffected status are maintained.

Alternative Substitutes for Reduced Voltage Applications:

For applications where 75V Vdss is not required, the following active-status alternatives are available:

  • HUF75339P3 (onsemi): Provides 75A continuous current at 55V rating with 200W power dissipation. Suitable for lower-voltage applications requiring high current capacity. Active product status with RoHS3 compliance.

  • IRFZ48NPBF (Infineon): Rated 55V, 64A with 130W power dissipation. Active product status with RoHS3 compliance. Gate charge of 81 nC is higher than the main part.

  • CSD18537NKCS (Texas Instruments): Rated 60V, 50A with 94W power dissipation. Active product status with RoHS3 compliance. Operating temperature range limited to -55°C to 150°C.

  • DMT6009LCT (Diodes Incorporated): Rated 60V, 37.2A with 25W power dissipation. Active product status with RoHS3 compliance. Lower current rating limits applicability to reduced-current designs.

Parts Not Recommended for New Designs:

IRFZ44VZPBF and IRFZ44ZPBF carry "Not For New Designs" status and should not be selected for new applications despite electrical compatibility.

Frequently Asked Questions (FAQ)

Q: Can IXTP70N075T2 directly replace IXTP76N075T in all applications?

A: IXTP70N075T2 is electrically compatible as a direct replacement for applications where the continuous drain current requirement does not exceed 70A. Both devices share identical 75V Vdss rating, 12mOhm Rds On, and TO-220-3 packaging. Applications requiring the full 76A capability must use alternative parts or parallel device configurations.

Q: What is the voltage derating consideration when selecting lower-voltage alternatives?

A: Parts rated below 75V (such as HUF75339P3 at 55V, IRFZ48NPBF at 55V, IRFZ44VZPBF at 60V, CSD18537NKCS at 60V, and DMT6009LCT at 60V) are suitable only for applications where the maximum drain-to-source voltage does not exceed their respective ratings. Circuit design must ensure that transient overvoltage conditions do not exceed device ratings.

Q: How does gate charge affect switching performance in substitution?

A: Gate charge (Qg) determines the energy required to switch the device. IXTP70N075T2 has lower gate charge (46 nC) compared to IXTP76N075T (57 nC), resulting in faster switching and reduced drive circuit power dissipation. Higher gate charge alternatives such as HUF75339P3 (130 nC) and IRFZ48NPBF (81 nC) require proportionally more drive energy and may affect switching frequency performance.

Q: Are all substitute parts RoHS3 compliant?

A: IXTP70N075T2, HUF75339P3, IRFZ48NPBF, IRFZ44VZPBF, IRFZ44ZPBF, CSD18537NKCS, and DMT6009LCT are all RoHS3 compliant. All parts listed carry REACH unaffected status.

Q: What is the significance of product status in part selection?

A: IXTP76N075T is obsolete, making substitution necessary for procurement. IXTP70N075T2 is the recommended substitute with active product status, ensuring long-term availability. Parts marked "Not For New Designs" (IRFZ44VZPBF, IRFZ44ZPBF) should be avoided in new applications despite technical compatibility. All other alternatives carry active product status.

Q: Does operating temperature range affect substitution suitability?

A: IXTP76N075T and IXTP70N075T2 both support -55°C to 175°C operating range. CSD18537NKCS and DMT6009LCT are limited to -55°C to 150°C. Applications requiring operation above 150°C must use IXTP70N075T2, HUF75339P3, IRFZ48NPBF, IRFZ44VZPBF, or IRFZ44ZPBF.

Q: Can multiple lower-current devices be paralleled to achieve 76A capability?

A: Parallel operation of MOSFETs is possible but requires careful circuit design to ensure current sharing. This approach is outside the scope of direct substitution and requires detailed thermal and gate drive analysis specific to the application.

Q: What packaging considerations apply to all listed substitutes?

A: All substitute parts are packaged in TO-220-3 through-hole configuration, maintaining mechanical and thermal interface compatibility with the original IXTP76N075T. PCB layout and heatsink mounting remain unchanged.

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