IXTP75N10P N-Channel MOSFET 100V 75A TO-220-3 Equivalent & Substitute Parts

Part Overview

The IXTP75N10P is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by IXYS, rated for 100V drain-to-source voltage and 75A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and dissipates up to 360W at the case temperature. This part is currently in active product status with 13,500 units in stock.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-state resistance characteristics, and compatible through-hole packaging. Substitutes enable design flexibility, supply chain alternatives, and performance optimization within the same application class.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	75	A (Tc)
On-State Resistance (Rds On) @ 500mA, 10V	25	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5.5	V
Gate Charge (Qg) @ 10V	74	nC
Power Dissipation (Max)	360	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts are classified into three functional groups based on electrical parameter compatibility with the IXTP75N10P:

Group 1: Direct Equivalents (100V, 75A Rating) Parts matching both the 100V Vdss and 75A Id specifications. These devices are pin-compatible and electrically interchangeable for applications requiring the full rated current capacity. Substitutes in this group include HUF75645P3 (onsemi), PSMN015-100P,127 (Nexperia), and STP60NF10 (STMicroelectronics).

Group 2: Reduced Current Capacity (100V, <75A Rating) Parts rated for 100V Vdss but with lower continuous drain current. These substitutes are suitable for applications where the full 75A capability is not required. Included parts are DMNH10H028SCT (Diodes Incorporated, 60A), PHP45NQ10T,127 (NXP, 47A), and STP40NF10 (STMicroelectronics, 50A).

Group 3: Elevated Voltage Rating (>100V, 75A Rating) Parts exceeding the 100V Vdss specification while maintaining 75A Id capability. These devices provide enhanced voltage margin and are suitable for applications with higher transient voltage stress. IPP114N12N3GXKSA1 (Infineon, 120V) is included in this group.

Substitution logic is determined by the following critical parameters: Drain-to-Source Voltage (Vdss), Continuous Drain Current (Id) @ 25°C, On-State Resistance (Rds On), Gate Threshold Voltage (Vgs(th)), Package Type, and Operating Temperature Range.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	Package	Status
IXTP75N10P	IXYS	100	75	25 @ 500mA, 10V	74 @ 10V	360 (Tc)	TO-220-3	Active
HUF75645P3	onsemi	100	75	14 @ 75A, 10V	238 @ 20V	310 (Tc)	TO-220-3	Active
PSMN015-100P,127	Nexperia	100	75	15 @ 25A, 10V	90 @ 10V	300 (Tc)	TO-220-3	Obsolete
STP60NF10	STMicroelectronics	100	80	23 @ 40A, 10V	104 @ 10V	300 (Tc)	TO-220-3	Active
DMNH10H028SCT	Diodes Incorporated	100	60	28 @ 20A, 10V	31.9 @ 10V	2.8 (Ta)	TO-220-3	Active
PHP45NQ10T,127	NXP Semiconductors	100	47	25 @ 25A, 10V	61 @ 10V	150 (Tc)	TO-220-3	Active
STP40NF10	STMicroelectronics	100	50	28 @ 25A, 10V	62 @ 10V	150 (Tc)	TO-220-3	Active
STP40NF10L	STMicroelectronics	100	40	33 @ 20A, 10V	64 @ 5V	150 (Tc)	TO-220-3	Active
IPP114N12N3GXKSA1	Infineon Technologies	120	75	11.4 @ 75A, 10V	65 @ 10V	136 (Tc)	TO-220-3	Active

Engineering Selection Recommendations

For Direct Replacement (100V, 75A Applications)

HUF75645P3 (onsemi) is recommended as the primary direct equivalent. This device maintains identical voltage and current ratings, operates across the same temperature range (-55°C to 175°C), and is housed in the TO-220-3 package. The HUF75645P3 exhibits superior on-state resistance (14 mOhm versus 25 mOhm), resulting in lower conduction losses. Product status is active with 2,980 units in stock. RoHS3 compliance and REACH unaffected status are confirmed.

STP60NF10 (STMicroelectronics) provides an alternative direct equivalent with 80A continuous drain current, exceeding the IXTP75N10P specification. This device is rated for 100V Vdss and operates within the same temperature range. On-state resistance is 23 mOhm at 40A, 10V. Product status is active with 1,440 units in stock. RoHS3 compliance and REACH unaffected status are confirmed.

PSMN015-100P,127 (Nexperia) matches the 100V and 75A specifications but carries an obsolete product status. This part should not be selected for new designs or long-term supply commitments.

For Reduced Current Applications (100V, <75A)

DMNH10H028SCT (Diodes Incorporated) is suitable for applications requiring 60A continuous drain current at 100V. This device includes AEC-Q101 automotive qualification and is active in production. On-state resistance is 28 mOhm at 20A, 10V. Inventory is 4,350 units.

PHP45NQ10T,127 (NXP Semiconductors) supports 47A continuous drain current at 100V. Product status is active with 3,255 units in stock. REACH status is affected; compliance verification is required for regulated applications.

STP40NF10 (STMicroelectronics) provides 50A continuous drain current at 100V with active product status and 79,600 units in stock. This represents the highest inventory availability among all substitutes.

STP40NF10L (STMicroelectronics) is rated for 40A continuous drain current at 100V and is active in production with 15,465 units in stock.

For Elevated Voltage Applications (>100V, 75A)

IPP114N12N3GXKSA1 (Infineon Technologies) is rated for 120V Vdss with 75A continuous drain current, providing enhanced voltage margin. This device exhibits the lowest on-state resistance (11.4 mOhm at 75A, 10V) among all listed substitutes. Product status is active with 1,503 units in stock. RoHS3 compliance and REACH unaffected status are confirmed. The OptiMOS™ series designation indicates advanced process technology.

Compliance and Regulatory Status

All recommended active substitutes are RoHS3 compliant and REACH unaffected, with the exception of PHP45NQ10T,127, which carries REACH affected status. All parts operate across the -55°C to 175°C temperature range, matching the IXTP75N10P specification. All devices are housed in TO-220-3 through-hole packages, ensuring mechanical compatibility.

Frequently Asked Questions (FAQ)

Q: Can HUF75645P3 be used as a direct replacement for IXTP75N10P?

A: Yes. HUF75645P3 matches the 100V Vdss and 75A Id specifications, operates across the same temperature range (-55°C to 175°C), and is housed in the TO-220-3 package. The device is pin-compatible and electrically interchangeable. HUF75645P3 exhibits lower on-state resistance (14 mOhm versus 25 mOhm), resulting in reduced conduction losses.

Q: What is the difference between Group 1 and Group 3 substitutes?

A: Group 1 substitutes (HUF75645P3, STP60NF10, PSMN015-100P,127) maintain the 100V Vdss rating of the IXTP75N10P. Group 3 substitutes (IPP114N12N3GXKSA1) exceed the voltage rating at 120V Vdss. Group 3 devices provide enhanced voltage margin for applications subject to transient overvoltage conditions but may introduce higher input capacitance and gate charge.

Q: Can I use STP40NF10 in place of IXTP75N10P?

A: STP40NF10 is suitable only for applications where the continuous drain current requirement does not exceed 50A. The device maintains the 100V Vdss rating and TO-220-3 package compatibility. On-state resistance is 28 mOhm at 25A, 10V. If the application requires the full 75A capability, STP40NF10 is not appropriate.

Q: Why is PSMN015-100P,127 listed if it is obsolete?

A: PSMN015-100P,127 is included for reference purposes only, as it appears in the provided substitute list. This part carries obsolete product status and should not be selected for new designs or applications requiring long-term supply assurance. Active alternatives such as HUF75645P3 or STP60NF10 are recommended instead.

Q: What is the significance of on-state resistance (Rds On) in substitute selection?

A: On-state resistance directly determines conduction losses and heat dissipation during normal operation. Lower Rds On values reduce power loss and thermal stress. IPP114N12N3GXKSA1 exhibits the lowest Rds On (11.4 mOhm at 75A, 10V), while STP40NF10L exhibits the highest (33 mOhm at 20A, 10V). Selection depends on thermal budget and efficiency requirements of the application.

Q: Are all substitute parts RoHS3 compliant?

A: All active substitute parts listed are RoHS3 compliant. PHP45NQ10T,127 carries REACH affected status and requires compliance verification for regulated applications. PSMN015-100P,127 is obsolete and should not be used in new designs.

Q: What is the difference between TO-220-3 and TO-220AB packaging?

A: TO-220-3 and TO-220AB refer to the same three-lead through-hole package format. Both designations describe a package with drain, gate, and source leads suitable for mounting on printed circuit boards with standard TO-220 footprints. All listed substitutes are mechanically compatible with the IXTP75N10P footprint.

Q: Can IPP114N12N3GXKSA1 be used in a 100V application?

A: Yes. IPP114N12N3GXKSA1 is rated for 120V Vdss, which exceeds the 100V requirement. The device operates safely at 100V with additional voltage margin. This configuration is suitable for applications subject to transient overvoltage or where enhanced reliability is required. No circuit modifications are necessary.

Q: Which substitute offers the best inventory availability?

A: STP40NF10 (STMicroelectronics) offers the highest inventory availability with 79,600 units in stock. This part is suitable for applications requiring up to 50A continuous drain current at 100V. For applications requiring the full 75A capability, HUF75645P3 provides the next highest availability at 2,980 units.

Q: What is the impact of gate charge (Qg) on switching performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. Higher gate charge values increase switching losses and require higher gate drive current. IPP114N12N3GXKSA1 exhibits the lowest gate charge (65 nC @ 10V), while HUF75645P3 exhibits the highest (238 nC @ 20V). Selection depends on gate driver capability and switching frequency requirements.

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