IXTP70N075T2 Equivalent & Substitute Parts

Part Overview

The IXTP70N075T2 is an N-Channel MOSFET manufactured by IXYS in the TrenchT2™ series. This device is rated for 75V drain-to-source voltage with a continuous drain current of 70A at 25°C and maximum power dissipation of 150W. The part is housed in a TO-220-3 through-hole package and is currently in active product status with 963 units in stock.

Substitute parts are necessary when the primary device becomes unavailable, when design requirements shift toward lower voltage or current ratings, or when alternative manufacturers' components offer equivalent electrical performance within acceptable parameter ranges. Substitution is valid only when the replacement device meets or exceeds the electrical specifications required by the application circuit.

Substiute Parts

IXTP70N075T2
IXYSIn Stock: 1021IXTP70N075T2 Datasheet
IXTP70N075T2
Current Part
CSD18537NKCS
Texas InstrumentsIn Stock: 1607CSD18537NKCS Datasheet
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DMT6009LCT
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IRFB3806PBF
Infineon TechnologiesIn Stock: 1514IRFB3806PBF Datasheet
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IRFZ44VZPBF
Infineon TechnologiesIn Stock: 2315IRFZ44VZPBF Datasheet
IRFZ44VZPBF
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IRFZ44ZPBF
Infineon TechnologiesIn Stock: 1486IRFZ44ZPBF Datasheet
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IRFZ48NPBF
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STP60NF06
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TK30E06N1,S1X
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 75 V
Continuous Drain Current (Id) @ 25°C 70 A
On-State Resistance (Rds On) @ 25A, 10V 12 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 46 nC
Input Capacitance (Ciss) @ 25V 2725 pF
Power Dissipation (Max) 150 W
Operating Temperature Range -55 to 175 °C
Package Type TO-220-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the IXTP70N075T2 is determined by the following critical parameters:

Voltage Rating (Vdss): The substitute device must have a Vdss rating equal to or greater than 75V. Devices with lower voltage ratings (55V, 60V) are acceptable only in applications where the circuit operates below the substitute's maximum voltage specification.

Current Rating (Id): The substitute device must support a continuous drain current equal to or greater than 70A at 25°C to maintain equivalent current-handling capacity.

On-State Resistance (Rds On): Lower Rds On values indicate superior performance and reduced power dissipation. The substitute should not significantly exceed the 12 mOhm specification at the rated current and gate voltage.

Package and Mounting: All substitute parts must use the TO-220-3 through-hole package to ensure mechanical and thermal compatibility with existing PCB layouts and heatsinking arrangements.

Operating Temperature Range: The substitute must support the full operating temperature range of -55°C to 175°C or a range that encompasses the application's thermal requirements.

Compliance and Status: Active product status is preferred for new designs. RoHS3 compliance and REACH unaffected status are maintained across all listed substitutes.

Parameter Comparison

Manufacturer Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Qg (nC) Power Dissipation (W) Temp Range (°C) Product Status
IXTP70N075T2 IXYS 75 70 12 46 150 -55 to 175 Active
CSD18537NKCS Texas Instruments 60 50 14 18 94 -55 to 150 Active
DMT6009LCT Diodes Incorporated 60 37.2 12 33.5 25 -55 to 150 Active
IRFB3806PBF Infineon Technologies 60 43 15.8 30 71 -55 to 175 Active
IRFZ44VZPBF Infineon Technologies 60 57 12 65 92 -55 to 175 Not For New Designs
IRFZ44ZPBF Infineon Technologies 55 51 13.9 43 80 -55 to 175 Not For New Designs
IRFZ48NPBF Infineon Technologies 55 64 14 81 130 -55 to 175 Active
STP60NF06 STMicroelectronics 60 60 16 73 110 -55 to 175 Active
TK30E06N1,S1X Toshiba Semiconductor and Storage 60 43 15 16 53 -55 to 150 Active

Engineering Selection Recommendations

For Direct Substitution (Equivalent Performance):

The IRFZ44VZPBF and STP60NF06 provide the closest electrical equivalence to the IXTP70N075T2 within the constraints of lower voltage ratings. Both devices support 60V operation, deliver 57A and 60A continuous drain current respectively, and maintain Rds On specifications within acceptable tolerance. Both are rated for the full -55°C to 175°C operating temperature range. However, IRFZ44VZPBF carries a "Not For New Designs" status and should be used only in legacy system maintenance or replacement scenarios.

STP60NF06 is the preferred substitute for new designs, offering active product status, 60A continuous current capability, and full temperature range support. This device is suitable for applications where the 75V rating of the IXTP70N075T2 is not a hard requirement and the circuit operates safely at 60V.

For Current-Limited Applications:

The IRFZ48NPBF supports 64A continuous drain current at 55V with active product status and full temperature range operation. This device is appropriate for applications where current demand is slightly lower than 70A and voltage stress is reduced to 55V.

For Lower Power Dissipation Requirements:

The CSD18537NKCS, DMT6009LCT, and TK30E06N1,S1X are suitable when power dissipation constraints are tighter than the 150W specification of the IXTP70N075T2. These devices operate at 60V with reduced current ratings (50A, 37.2A, and 43A respectively) and lower power dissipation figures (94W, 25W, and 53W). All three maintain RoHS3 compliance and REACH unaffected status.

Compliance Considerations:

All substitute parts listed are RoHS3 compliant and REACH unaffected, matching the regulatory status of the IXTP70N075T2. Moisture sensitivity level is 1 (Unlimited) for all devices except CSD18537NKCS, which lists MSL as Not Applicable.

Frequently Asked Questions (FAQ)

Q: Can I use a 60V-rated MOSFET in place of the 75V IXTP70N075T2?

A: Yes, provided the application circuit operates at voltages below 60V. The substitute device will function correctly in circuits where the maximum drain-to-source voltage does not exceed the substitute's Vdss rating. If the circuit requires 75V operation, a 60V substitute is not acceptable.

Q: What is the significance of the "Not For New Designs" status on IRFZ44VZPBF and IRFZ44ZPBF?

A: This status indicates that Infineon Technologies no longer recommends these parts for new product development. These devices are suitable only for replacement in existing systems or legacy applications. For new designs, select from parts with "Active" product status such as STP60NF06, IRFZ48NPBF, or CSD18537NKCS.

Q: Does the TO-220-3 package ensure mechanical compatibility?

A: Yes. All substitute parts listed use the TO-220-3 through-hole package, ensuring identical pin configuration, PCB footprint, and heatsink mounting compatibility with the IXTP70N075T2. No PCB layout modifications are required for package substitution.

Q: How does on-state resistance (Rds On) affect substitution?

A: Rds On directly determines power dissipation and heat generation. The IXTP70N075T2 specifies 12 mOhm at 25A and 10V. Substitute devices with higher Rds On values (such as IRFB3806PBF at 15.8 mOhm) will dissipate more power under identical operating conditions. Verify that the substitute's Rds On does not cause thermal design violations in your application.

Q: Can I substitute a lower-current device if my application does not require 70A?

A: Yes. If your circuit operates at currents below 70A, devices such as CSD18537NKCS (50A), DMT6009LCT (37.2A), or TK30E06N1,S1X (43A) are acceptable substitutes. Ensure that the selected device's current rating exceeds your application's maximum continuous drain current requirement.

Q: What is the operating temperature range impact on substitution?

A: The IXTP70N075T2 operates from -55°C to 175°C. Substitute devices with identical or wider temperature ranges (such as IRFZ48NPBF, IRFZ44VZPBF, and STP60NF06) are fully compatible. Devices with narrower ranges (such as CSD18537NKCS at -55°C to 150°C) are acceptable only if your application does not require operation above 150°C.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and REACH unaffected status, matching the regulatory compliance of the IXTP70N075T2.

Q: What is gate charge (Qg) and why does it matter for substitution?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. The IXTP70N075T2 specifies 46 nC at 10V. Substitute devices with lower gate charge (such as TK30E06N1,S1X at 16 nC) switch faster and require less gate drive power. Higher gate charge devices (such as IRFZ48NPBF at 81 nC) require more robust gate drive circuits. Verify that your gate driver can supply the substitute device's gate charge specification.

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