IXTP6N50P N-Channel 500V 6A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP6N50P is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by IXYS, rated for 500V drain-to-source voltage and 6A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is part of the PolarHV™ series. This part is classified as obsolete, making equivalent and substitute components necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	6	A
Rds On (Max) @ Id, Vgs	1.1	Ω @ 3A, 10V
Gate Threshold Voltage (Vgs(th)) (Max)	5	V @ 50µA
Gate Charge (Qg) (Max)	14.6	nC @ 10V
Input Capacitance (Ciss) (Max)	740	pF @ 25V
Power Dissipation (Max)	100	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole

Substitute Part Grouping Explanation

Substitution of the IXTP6N50P is determined by the following critical electrical and mechanical parameters:

Voltage Rating (Vdss): Substitute parts must maintain the 500V drain-to-source voltage specification or exceed it. Parts rated at higher voltages (650V) are acceptable as they provide additional voltage margin.

Current Rating (Id): Substitute parts must support the 6A continuous drain current requirement at 25°C or higher. Parts rated at 5A or below do not meet the minimum current specification and are not suitable direct substitutes.

On-State Resistance (Rds On): The maximum on-state resistance must not significantly exceed the 1.1Ω specification at the rated gate voltage (10V) to maintain equivalent power dissipation characteristics.

Package Type: All substitute parts must use the TO-220-3 through-hole package to ensure mechanical and thermal compatibility with existing PCB designs.

Gate Threshold Voltage (Vgs(th)): Substitute parts must have compatible gate threshold voltage specifications (typically 4V to 5V) to ensure proper gate drive compatibility.

Operating Temperature Range: Substitute parts must support the full -55°C to 150°C operating temperature range.

Parameter Comparison

Parameter	IXTP6N50P	IRF830APBF	FDP7N50	IXTP8N65X2	CDM22010-650 SL
Manufacturer	IXYS	Vishay Siliconix	onsemi	IXYS	Central Semiconductor Corp
Vdss (V)	500	500	500	650	650
Id @ 25°C (A)	6	5	7	8	10
Rds On (Max) (Ω)	1.1 @ 3A, 10V	1.4 @ 3A, 10V	0.9 @ 3.5A, 10V	0.5 @ 4A, 10V	1.0 @ 5A, 10V
Vgs(th) (Max) (V)	5 @ 50µA	4.5 @ 250µA	5 @ 250µA	5 @ 250µA	4 @ 250µA
Qg (Max) (nC)	14.6 @ 10V	24 @ 10V	16.6 @ 10V	12 @ 10V	20 @ 10V
Ciss (Max) (pF)	740 @ 25V	620 @ 25V	940 @ 25V	800 @ 25V	1168 @ 25V
Power Dissipation (Max) (W)	100	74	89	150	156
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Obsolete	Active	Obsolete
RoHS Compliance	Not Specified	ROHS3 Compliant	ROHS3 Compliant	Not Specified	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: IRF830APBF

The IRF830APBF is the recommended primary substitute for the IXTP6N50P. Both devices share identical voltage ratings (500V Vdss) and operate within the same temperature range (-55°C to 150°C). The IRF830APBF is manufactured by Vishay Siliconix and maintains active product status, ensuring long-term availability. The device is ROHS3 compliant and carries REACH affected status. The continuous drain current rating of 5A is slightly lower than the IXTP6N50P (6A), requiring thermal and current margin verification in applications operating near maximum current specifications. The on-state resistance of 1.4Ω is marginally higher, resulting in increased power dissipation. The TO-220-3 package provides direct mechanical compatibility.

Secondary Substitute: FDP7N50

The FDP7N50 manufactured by onsemi is a secondary substitute option. This device maintains the 500V voltage rating and provides a higher continuous drain current of 7A, exceeding the IXTP6N50P specification. The on-state resistance of 0.9Ω is lower than the original part, providing improved efficiency. The FDP7N50 is ROHS3 compliant and carries obsolete product status. The TO-220-3 package ensures mechanical compatibility. Gate charge and input capacitance are slightly higher, which may affect switching speed characteristics.

Higher Voltage Alternatives: IXTP8N65X2 and CDM22010-650 SL

The IXTP8N65X2 and CDM22010-650 SL are higher voltage alternatives rated at 650V Vdss. These devices provide additional voltage margin for applications requiring enhanced overvoltage protection. The IXTP8N65X2 offers 8A continuous drain current and 150W power dissipation with active product status. The CDM22010-650 SL provides 10A continuous drain current and 156W power dissipation but carries obsolete product status. Both devices use TO-220-3 packages. Selection of these higher voltage alternatives requires verification that the increased voltage rating does not introduce unintended circuit behavior or performance degradation in the target application.

Frequently Asked Questions (FAQ)

Q: Can the IRF830APBF directly replace the IXTP6N50P in all applications?

A: The IRF830APBF is electrically compatible with the IXTP6N50P for applications operating below 5A continuous drain current. Applications requiring the full 6A rating must be re-evaluated for thermal performance, as the IRF830APBF has a lower power dissipation rating (74W versus 100W). The on-state resistance difference (1.4Ω versus 1.1Ω) results in approximately 27% higher conduction losses at rated current.

Q: What is the significance of the voltage rating difference between 500V and 650V devices?

A: The IXTP6N50P is rated for 500V maximum drain-to-source voltage. Substitute devices rated at 650V (IXTP8N65X2, CDM22010-650 SL) provide additional voltage margin and can be used in applications where the original 500V rating is adequate. However, higher voltage rated devices typically exhibit different switching characteristics and input capacitance values, which may affect circuit performance in high-frequency switching applications.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes, all substitute parts listed in this reference are available in the TO-220-3 through-hole package, ensuring mechanical and thermal compatibility with existing PCB designs. Package compatibility eliminates the need for PCB redesign when substituting components.

Q: What is the impact of on-state resistance differences on circuit performance?

A: On-state resistance (Rds On) directly affects conduction losses and heat dissipation. The IXTP6N50P specifies 1.1Ω at 3A and 10V gate voltage. Substitute parts with lower Rds On values (FDP7N50 at 0.9Ω, IXTP8N65X2 at 0.5Ω) reduce conduction losses and improve efficiency. Substitute parts with higher Rds On values (IRF830APBF at 1.4Ω) increase conduction losses and require enhanced thermal management.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXTP6N50P specifies 14.6 nC at 10V. Substitute parts with lower gate charge (IXTP8N65X2 at 12 nC) reduce gate drive power requirements and enable faster switching. Substitute parts with higher gate charge (IRF830APBF at 24 nC, CDM22010-650 SL at 20 nC) require higher gate drive power and may reduce switching speed.

Q: What compliance considerations apply to substitute part selection?

A: The IXTP6N50P does not specify RoHS compliance status. Active substitute options include IRF830APBF, FDP7N50, and IXTP8N65X2, all of which are ROHS3 compliant. For applications requiring RoHS compliance, these active alternatives are preferred. The IRF830APBF carries REACH affected status, while other alternatives carry REACH unaffected status.

Q: Can devices with higher current ratings be used as direct substitutes?

A: Yes, devices with higher current ratings (FDP7N50 at 7A, IXTP8N65X2 at 8A, CDM22010-650 SL at 10A) can be used as direct substitutes for the IXTP6N50P in applications operating at or below 6A continuous drain current. Higher current ratings provide additional design margin and do not introduce compatibility issues. However, the electrical characteristics (Rds On, gate charge, input capacitance) differ and must be evaluated for the specific application.

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