IXTP64N055T N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP64N055T is an N-Channel MOSFET manufactured by IXYS in the TrenchMV™ series, rated for 55V drain-to-source voltage and 64A continuous drain current at 25°C. The device is packaged in TO-220-3 through-hole configuration with a maximum power dissipation of 130W at case temperature. This part is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole TO-220-3 package standard.

Key Parameters

Parameter	IXTP64N055T	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	64	A (Tc)
On-State Resistance (Rds On) @ 10V, 500mA	13	mOhm
Gate Threshold Voltage (Vgs(th)) @ 25µA	4	V
Gate Charge (Qg) @ 10V	37	nC
Input Capacitance (Ciss) @ 25V	1420	pF
Power Dissipation (Max)	130	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	Enhancement Mode

Substitute Part Grouping Explanation

Substitution of the IXTP64N055T is determined by the following critical electrical and mechanical parameters:

Voltage Compatibility: Substitute parts must have a Vdss rating equal to or greater than 55V. Parts rated at 60V are acceptable as they provide voltage margin while maintaining compatibility with 55V circuit designs.

Current Capability: Substitute parts must support continuous drain current (Id) at or above 64A at 25°C case temperature. Parts with higher current ratings (75A, 90A) are acceptable as they provide thermal margin and current headroom.

On-State Resistance (Rds On): Substitute parts must have Rds On values within acceptable range for the application. Lower Rds On values indicate improved efficiency and reduced power dissipation.

Gate Charge (Qg): Gate charge affects switching speed and driver requirements. Substitute parts with similar or lower gate charge maintain driver compatibility.

Package and Mounting: All substitute parts must use TO-220-3 through-hole packaging to ensure mechanical and thermal interface compatibility.

Operating Temperature: Substitute parts must support the full operating temperature range of -55°C to 175°C or maintain compatibility within the application's thermal envelope.

Product Status: Active status parts are preferred for new designs. Parts marked "Not For New Designs" are acceptable for legacy system support and replacement applications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Tj Range (°C)	Status
IXTP64N055T	IXYS	55	64	13 @ 500mA, 10V	37 @ 10V	1420 @ 25V	130	-55 to 175	Obsolete
IXTP90N055T2	IXYS	55	90	8.4 @ 25A, 10V	42 @ 10V	2770 @ 25V	150	-55 to 175	Active
CSD18537NKCS	Texas Instruments	60	50	14 @ 25A, 10V	18 @ 10V	1480 @ 30V	94	-55 to 150	Active
DMT6009LCT	Diodes Incorporated	60	37.2	12 @ 13.5A, 10V	33.5 @ 10V	1925 @ 30V	25 (Tc)	-55 to 150	Active
HUF75339P3	onsemi	55	75	12 @ 75A, 10V	130 @ 20V	2000 @ 25V	200	-55 to 175	Active
IRFB3806PBF	Infineon Technologies	60	43	15.8 @ 25A, 10V	30 @ 10V	1150 @ 50V	71	-55 to 175	Active
IRFZ44VZPBF	Infineon Technologies	60	57	12 @ 34A, 10V	65 @ 10V	1690 @ 25V	92	-55 to 175	Not For New Designs
IRFZ44ZPBF	Infineon Technologies	55	51	13.9 @ 31A, 10V	43 @ 10V	1420 @ 25V	80	-55 to 175	Not For New Designs
IRFZ48NPBF	Infineon Technologies	55	64	14 @ 32A, 10V	81 @ 10V	1970 @ 25V	130	-55 to 175	Active
PJP45N06A_T0_00001	Panjit International Inc.	60	55	12 @ 20A, 10V	39 @ 10V	2256 @ 25V	96	-55 to 150	Not For New Designs

Engineering Selection Recommendations

Primary Substitute - IRFZ48NPBF (Infineon Technologies): This part provides direct electrical equivalence to the IXTP64N055T with identical 55V/64A ratings and 130W power dissipation. The IRFZ48NPBF maintains full operating temperature range (-55°C to 175°C) and is actively produced. RoHS3 compliance and REACH unaffected status ensure regulatory alignment. Gate charge of 81nC is higher than the original part, requiring verification of gate driver capability in high-frequency switching applications.

Secondary Substitute - IXTP90N055T2 (IXYS): This active-status part from the same manufacturer offers superior current capability (90A versus 64A) and improved on-state resistance (8.4mOhm versus 13mOhm). The TrenchT2™ series technology provides enhanced thermal performance with 150W maximum power dissipation. Identical voltage rating (55V) and full temperature range (-55°C to 175°C) ensure direct compatibility. Higher gate charge (42nC) and input capacitance (2770pF) require gate driver assessment.

Tertiary Substitute - HUF75339P3 (onsemi): This UltraFET™ series part offers 55V/75A ratings with superior current margin and 200W power dissipation. Active product status and full temperature range support (-55°C to 175°C) provide long-term availability. On-state resistance of 12mOhm is comparable to the original specification. Significantly higher gate charge (130nC @ 20V) necessitates gate driver compatibility verification.

Alternative for Current-Limited Applications - CSD18537NKCS (Texas Instruments): This active part provides 60V/50A ratings suitable for applications where the full 64A capability is not required. Lower gate charge (18nC) and input capacitance (1480pF) reduce gate driver stress. Operating temperature range limited to -55°C to 150°C requires thermal envelope verification. RoHS3 compliance confirmed.

Legacy Support - IRFZ44VZPBF (Infineon Technologies): Marked "Not For New Designs," this part is suitable for replacement and repair of existing systems. The 60V/57A rating provides near-equivalent performance with 12mOhm on-state resistance. Full temperature range support (-55°C to 175°C) and RoHS3 compliance enable legacy system maintenance.

Frequently Asked Questions (FAQ)

Q: Can IXTP90N055T2 directly replace IXTP64N055T in all applications?

A: The IXTP90N055T2 provides electrical substitution with identical 55V voltage rating and superior current capability (90A versus 64A). However, the higher gate charge (42nC versus 37nC) and input capacitance (2770pF versus 1420pF) may require gate driver reassessment in high-frequency switching circuits. Thermal performance is improved (150W versus 130W), providing additional margin. Mechanical compatibility is maintained through identical TO-220-3 packaging.

Q: What is the difference between 55V and 60V rated parts?

A: Parts rated at 60V provide 5V additional voltage margin over the IXTP64N055T's 55V specification. In 55V circuit designs, 60V-rated parts operate with reduced stress and extended device lifetime. However, 60V parts typically exhibit different on-state resistance characteristics and may have different gate charge specifications. Selection depends on circuit voltage headroom requirements and thermal design margins.

Q: Why does IRFZ48NPBF have higher gate charge than IXTP64N055T?

A: Gate charge (Qg) is a function of die size, technology node, and internal capacitance. The IRFZ48NPBF's 81nC gate charge (versus 37nC for IXTP64N055T) reflects different silicon technology and die geometry. Higher gate charge increases gate driver power dissipation and switching losses in high-frequency applications. Gate driver current capability must be verified to ensure adequate charging speed and switching performance.

Q: Are "Not For New Designs" parts acceptable for production use?

A: Parts marked "Not For New Designs" (IRFZ44VZPBF, IRFZ44ZPBF, PJP45N06A_T0_00001) are suitable for legacy system support, repair, and replacement applications. These parts remain in inventory and are electrically functional. However, for new product development, active-status parts (IRFZ48NPBF, IXTP90N055T2, HUF75339P3) are recommended to ensure long-term supply availability and manufacturer support.

Q: What is the significance of on-state resistance (Rds On) variation among substitutes?

A: On-state resistance directly affects power dissipation and thermal performance. Lower Rds On values reduce I²R losses and heat generation. The IXTP90N055T2 (8.4mOhm) provides superior efficiency compared to IXTP64N055T (13mOhm). In high-current applications, lower Rds On reduces thermal stress and extends device lifetime. Circuit thermal design must account for these differences when selecting substitutes.

Q: Can parts with lower current ratings substitute for IXTP64N055T?

A: Parts with current ratings below 64A (such as CSD18537NKCS at 50A or DMT6009LCT at 37.2A) are suitable only for applications where continuous drain current does not exceed the substitute part's rating. These parts provide cost optimization for current-limited designs but cannot support full 64A operation. Application current requirements must be verified before selecting lower-rated alternatives.

Q: What is the impact of operating temperature range differences?

A: The IXTP64N055T supports -55°C to 175°C operation. Substitutes with reduced upper temperature limits (CSD18537NKCS, DMT6009LCT, PJP45N06A_T0_00001 at -55°C to 150°C) are acceptable if circuit thermal design maintains junction temperature below 150°C. Applications requiring full 175°C operation must use substitutes with matching temperature range (IXTP90N055T2, HUF75339P3, IRFZ48NPBF, IRFZ44VZPBF).

Q: How does input capacitance (Ciss) affect circuit performance?

A: Input capacitance affects gate driver charging time and switching speed. Higher Ciss values (HUF75339P3 at 2000pF, IXTP90N055T2 at 2770pF) require greater gate charge delivery and increase switching losses in high-frequency applications. Lower Ciss values (IRFB3806PBF at 1150pF) reduce gate driver stress. Gate driver current capability and switching frequency must be evaluated when substituting parts with significantly different Ciss values.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed are RoHS3 compliant or have RoHS compliance status confirmed. REACH unaffected status is maintained across all alternatives. Moisture sensitivity level (MSL) is 1 (Unlimited) for most parts, indicating standard handling requirements. Compliance documentation should be verified with component suppliers for specific procurement batches.

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