IXTP60N20T N-Channel MOSFET 200V 60A Equivalent & Substitute Parts

Part Overview

The IXTP60N20T is an N-Channel MOSFET manufactured by IXYS, designed for high-current switching applications requiring 200V drain-to-source voltage capability. This device operates in the Trench series and is housed in a TO-220-3 through-hole package. The part is currently in active production status with 5944 units in stock inventory.

Equivalent and substitute parts are identified when applications require component sourcing alternatives due to inventory constraints, supply chain considerations, or design flexibility within specified electrical and mechanical parameters. Substitutes must maintain compatibility across drain-to-source voltage ratings, continuous drain current specifications, gate drive requirements, and thermal operating ranges.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	60	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	40 mOhm @ 30A, 10V	mOhm
Gate Threshold Voltage Vgs(th) @ Id	5	V @ 250µA
Gate Charge (Qg) @ Vgs	73	nC @ 10V
Power Dissipation (Max)	500	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IXTP60N20T are qualified based on the following critical parameters that determine functional interchangeability:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal 200V
Continuous Drain Current (Id): Must be within ±10% of 60A specification
Drive Voltage (Max Rds On): Must equal 10V
Gate Threshold Voltage: Must be compatible at 5V nominal
Operating Temperature Range: Must encompass -55°C to 175°C minimum

Mechanical Compatibility Criteria:

Package Type: TO-220-3 or TO-220AB (pin-compatible variants)
Mounting Type: Through Hole
Compliance: ROHS3 Compliant, REACH Unaffected

Identified Substitutes:

FDP61N20 (onsemi UniFET™ series): Meets Vdss 200V, Id 61A, 10V drive voltage, compatible gate threshold, and through-hole TO-220-3 packaging. Operating temperature range -55°C to 150°C satisfies minimum requirements.
IRFB260NPBF (Infineon HEXFET® series): Meets Vdss 200V, Id 56A, 10V drive voltage, compatible gate threshold, and through-hole TO-220AB packaging. Operating temperature range -55°C to 175°C matches primary part specification.

Parameter Comparison

Parameter	IXTP60N20T (IXYS)	FDP61N20 (onsemi)	IRFB260NPBF (Infineon)	Unit
Drain to Source Voltage (Vdss)	200	200	200	V
Continuous Drain Current (Id) @ 25°C	60	61	56	A
Drive Voltage (Max Rds On)	10	10	10	V
Rds On (Max) @ Id, Vgs	40 @ 30A, 10V	41 @ 30.5A, 10V	40 @ 34A, 10V	mOhm
Gate Threshold Voltage Vgs(th) @ Id	5	5	4	V @ 250µA
Gate Charge (Qg) @ Vgs	73	75	220	nC @ 10V
Vgs (Max)	±20	±30	±20	V
Input Capacitance (Ciss) @ Vds	4530 @ 25V	3380 @ 25V	4220 @ 25V	pF
Power Dissipation (Max)	500	417	380	W
Operating Temperature Range	-55 to 175	-55 to 150	-55 to 175	°C
Package Type	TO-220-3	TO-220-3	TO-220AB	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

IXTP60N20T (Primary Part): Active production status with 5944 units in stock. ROHS3 compliant, REACH unaffected. Recommended for applications where the Trench series technology and 500W maximum power dissipation are specified design requirements. Operating temperature range extends to 175°C.

FDP61N20 (onsemi Substitute): Active production status with 2728 units in stock. ROHS3 compliant, REACH unaffected. Continuous drain current specification of 61A exceeds primary part by 1A. Gate charge of 75 nC is marginally higher than primary part (73 nC). Operating temperature maximum of 150°C is 25°C lower than primary part. Suitable for applications where maximum junction temperature does not exceed 150°C and slightly elevated gate charge is acceptable. UniFET™ series technology provides alternative switching characteristics.

IRFB260NPBF (Infineon Substitute): Active production status with 20400 units in stock (highest availability). ROHS3 compliant, REACH unaffected. Continuous drain current specification of 56A is 4A lower than primary part. Gate charge of 220 nC is significantly higher than primary part (73 nC), requiring consideration in gate drive circuit design. Operating temperature range matches primary part (-55°C to 175°C). Maximum power dissipation of 380W is lower than primary part. HEXFET® series technology. Suitable for applications where gate charge elevation and reduced power dissipation are acceptable within circuit design margins.

Frequently Asked Questions (FAQ)

Q: Can FDP61N20 directly replace IXTP60N20T in all applications?

A: FDP61N20 is electrically compatible for drain-to-source voltage (200V) and continuous drain current (61A vs. 60A). However, the maximum operating temperature is 150°C versus 175°C for the primary part. Applications requiring sustained operation above 150°C junction temperature require thermal analysis or selection of an alternative substitute. Gate charge difference (75 nC vs. 73 nC) is negligible for most gate drive circuits.

Q: What is the significance of the gate charge difference between IXTP60N20T (73 nC) and IRFB260NPBF (220 nC)?

A: Gate charge directly affects gate drive circuit design and switching speed. The IRFB260NPBF requires approximately 3 times more charge to reach full gate voltage compared to the primary part. Applications with fixed gate drive current sources or limited gate drive power must account for longer switching transition times. Gate drive voltage and current specifications should be verified against the substitute part datasheet.

Q: Are TO-220-3 and TO-220AB packages mechanically interchangeable?

A: TO-220-3 and TO-220AB are pin-compatible through-hole packages with identical lead spacing and mounting hole patterns. Both packages accommodate standard TO-220 heatsinks. Electrical performance differences between IXTP60N20T (TO-220-3) and IRFB260NPBF (TO-220AB) are determined by device characteristics, not package variant.

Q: Which substitute part offers the highest current capability?

A: FDP61N20 provides the highest continuous drain current specification at 61A, compared to 60A for IXTP60N20T and 56A for IRFB260NPBF. For applications requiring maximum current headroom, FDP61N20 is the preferred substitute, provided the 150°C maximum junction temperature is acceptable.

Q: Are all three parts suitable for high-temperature applications above 150°C?

A: IXTP60N20T and IRFB260NPBF both support operating temperatures to 175°C. FDP61N20 is limited to 150°C maximum junction temperature and is not suitable for applications requiring sustained operation above 150°C. Thermal design and ambient temperature conditions must be evaluated against the selected part's maximum rating.

Q: What compliance certifications apply to all three parts?

A: All three parts are ROHS3 compliant and REACH unaffected. Moisture sensitivity level for IXTP60N20T and IRFB260NPBF is MSL 1 (Unlimited). FDP61N20 lists MSL as Not Applicable. All parts carry ECCN EAR99 and HTSUS 8541.29.0095 classifications.

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