IXTP60N10T Equivalent & Substitute Parts

Part Overview

The IXTP60N10T is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage with 60A continuous drain current at 25°C. This device is housed in a TO-220-3 through-hole package and is part of the Trench series. The component maintains Active product status with 24,893 pieces currently in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining the same package type and thermal characteristics. Alternative models may be required due to supply constraints, manufacturing discontinuation, or design optimization requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	60	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	18 mOhm @ 25A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max)	4.5	V @ 50µA
Gate Charge (Qg) (Max)	49	nC @ 10V
Power Dissipation (Max)	176	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
Input Capacitance (Ciss) (Max)	2650	pF @ 25V
Gate-Source Voltage (Vgs) (Max)	±30	V

Substitute Part Grouping Explanation

Substitution eligibility for the IXTP60N10T is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 100V
Package Type: Must be TO-220-3 or TO-220AB (mechanically compatible through-hole packages)
FET Type: Must be N-Channel MOSFET
Technology: Must be Metal Oxide MOSFET
Mounting: Must be Through Hole

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 60A at 25°C
On-State Resistance (Rds On): Lower or equivalent values at specified gate voltage
Gate Charge (Qg): Values within acceptable switching performance range
Operating Temperature Range: Must support -55°C to 175°C minimum
Compliance: RoHS3 and REACH status must match or exceed original specification

The PSMN016-100PS,127 and STP60NF10 satisfy these criteria with matching voltage ratings, package compatibility, and thermal operating ranges. Both devices maintain N-Channel MOSFET topology with 100V Vdss rating in TO-220 package configurations.

Parameter Comparison

Parameter	IXTP60N10T (Main)	PSMN016-100PS,127	STP60NF10	Unit
Manufacturer	IXYS	Nexperia USA Inc.	STMicroelectronics	—
Drain to Source Voltage (Vdss)	100	100	100	V
Continuous Drain Current (Id) @ 25°C	60	57	80	A
Drive Voltage (Max Rds On)	10	10	10	V
Rds On (Max) @ Id, Vgs	18 mOhm @ 25A, 10V	16 mOhm @ 15A, 10V	23 mOhm @ 40A, 10V	mOhm
Gate Charge (Qg) (Max)	49	49	104	nC @ 10V
Power Dissipation (Max)	176	148	300	W (Tc)
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	°C (TJ)
Package Type	TO-220-3	TO-220AB	TO-220	—
Input Capacitance (Ciss) (Max)	2650	2404	4270	pF
Gate-Source Voltage (Vgs) (Max)	±30	±20	±20	V
Product Status	Active	Obsolete	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

IXTP60N10T (Primary Selection)

The IXTP60N10T maintains Active product status with robust inventory availability (24,893 pieces). This device is the preferred selection for new designs and ongoing production. Full RoHS3 compliance and REACH unaffected status confirm regulatory alignment. The ±30V gate-source voltage rating provides enhanced gate drive flexibility compared to substitute options.

STP60NF10 (Preferred Substitute)

The STP60NF10 from STMicroelectronics is the recommended substitute when IXTP60N10T availability is constrained. This device maintains Active product status with 1,440 pieces in stock. The STP60NF10 delivers superior continuous drain current (80A versus 60A), enabling operation at higher current levels within the same thermal envelope. Power dissipation capability reaches 300W, exceeding the original specification. All electrical parameters remain within acceptable substitution tolerances. The STripFET™ II series designation indicates advanced process technology. RoHS3 and REACH compliance match the original device.

PSMN016-100PS,127 (Secondary Substitute)

The PSMN016-100PS,127 from Nexperia USA Inc. is classified as Obsolete, limiting its suitability for new designs or long-term production commitments. This device exhibits lower continuous drain current (57A) and reduced power dissipation (148W) compared to the IXTP60N10T. The ±20V gate-source voltage maximum is more restrictive than the original ±30V rating. Inventory availability is limited (5,922 pieces). This substitute is acceptable only for applications where current and power requirements do not exceed the specified limits and where supply continuity is not critical.

Frequently Asked Questions (FAQ)

Q: Can the STP60NF10 directly replace the IXTP60N10T in existing designs?

A: Yes. Both devices share identical 100V Vdss rating, TO-220 package family compatibility, and -55°C to 175°C operating temperature range. The STP60NF10 provides equal or superior performance across all critical parameters. Pin configuration and thermal characteristics are compatible. No circuit modifications are required.

Q: What is the significance of the PSMN016-100PS,127 Obsolete status?

A: Obsolete status indicates the manufacturer has discontinued production. While functional equivalence exists, long-term supply cannot be guaranteed. This device is suitable only for repair or maintenance of existing equipment where immediate availability is not required. New designs should not incorporate this part.

Q: How do the gate charge specifications affect switching performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXTP60N10T and PSMN016-100PS,127 both specify 49 nC at 10V, indicating identical switching speed characteristics. The STP60NF10 specifies 104 nC, requiring approximately twice the gate charge. This results in slower switching transitions but does not affect DC operating characteristics. Gate drive circuit design must accommodate the higher charge requirement.

Q: Are there thermal management differences between these devices?

A: The STP60NF10 offers superior thermal performance with 300W maximum power dissipation versus 176W for the IXTP60N10T. This allows higher continuous current operation or reduced heatsink requirements in thermally constrained applications. The PSMN016-100PS,127 is limited to 148W, requiring more aggressive thermal management or lower operating currents.

Q: What package compatibility considerations apply?

A: All three devices use TO-220 family packages (TO-220-3, TO-220AB, TO-220). These packages are mechanically and electrically interchangeable in standard through-hole PCB layouts. Pin assignments follow industry standard conventions for N-Channel MOSFETs: Gate, Drain, Source. No adapter boards or special mounting hardware are required.

Q: How does the input capacitance (Ciss) specification impact circuit design?

A: Input capacitance affects gate drive circuit impedance and switching speed. The IXTP60N10T specifies 2650 pF at 25V, while the STP60NF10 specifies 4270 pF at 25V. Higher capacitance requires stronger gate drive current to achieve the same switching speed. The PSMN016-100PS,127 at 2404 pF provides the lowest capacitance, enabling faster switching with lower gate drive power.

Q: Are there compliance or regulatory differences between these devices?

A: All three devices maintain identical RoHS3 compliance and REACH unaffected status. No regulatory or environmental restrictions differentiate these options. All devices are suitable for applications requiring RoHS3 certification.

Q: What is the practical current rating difference between these devices?

A: The IXTP60N10T is rated for 60A continuous drain current. The STP60NF10 supports 80A, providing 33% additional current capacity. The PSMN016-100PS,127 is limited to 57A, slightly below the original specification. Device selection must account for actual application current requirements and thermal management capabilities.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message