IXTP5N60P N-Channel MOSFET 600V 5A Equivalent & Substitute Parts

Part Overview

The IXTP5N60P is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage and 5A continuous drain current in a TO-220-3 through-hole package. This device is part of the PolarHV™ series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating available packaging and thermal performance options.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	5	A
Power Dissipation (Max)	100	W
Rds On (Max) @ 2.5A, 10V	1.7	Ohm
Gate Charge (Qg) @ 10V	14.2	nC
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the IXTP5N60P is determined by the following critical parameters:

Electrical Compatibility Criteria:

FET Type: N-Channel topology must be maintained
Drain to Source Voltage (Vdss): Substitute parts must equal or exceed 600V
Continuous Drain Current (Id): Substitute parts must equal or exceed 5A at 25°C
Gate Drive Voltage: 10V drive voltage compatibility
Operating Temperature Range: Must support -55°C to 150°C

Mechanical Compatibility Criteria:

Mounting Type: Through-hole configuration required
Package Options: TO-220-3 (primary) or TO-251 (IPAK) alternative for space-constrained applications

Performance Considerations:

Rds On (on-resistance): Lower values indicate improved efficiency
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin

The three substitute parts listed below satisfy the minimum electrical requirements while offering improvements in current handling, voltage rating, or thermal performance. Package variations accommodate different PCB layout requirements.

Parameter Comparison

Parameter	IXTP5N60P	IXTP8N65X2	FQP8N80C	STU5N62K3
Manufacturer	IXYS	IXYS	onsemi	STMicroelectronics
Product Status	Obsolete	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	600	650	800	620
Id @ 25°C (A)	5	8	8	4.2
Rds On (Max) @ 10V (Ohm)	1.7 @ 2.5A	0.5 @ 4A	1.55 @ 4A	1.6 @ 2.1A
Gate Charge (Qg) @ 10V (nC)	14.2	12	45	26
Power Dissipation (Max) (W)	100	150	178	70
Input Capacitance (Ciss) @ 25V (pF)	750	800	2050	680
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package	TO-220-3	TO-220	TO-220-3	TO-251 (IPAK)
RoHS Status	Not Specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

IXTP8N65X2 (IXYS, Active Status)

The IXTP8N65X2 is an active product from the same manufacturer (IXYS) and represents the closest functional equivalent. It provides 650V Vdss (50V margin above the original specification) and 8A continuous drain current (3A improvement). The device features significantly lower on-resistance (0.5 Ohm vs. 1.7 Ohm), reducing conduction losses. Gate charge is lower (12 nC vs. 14.2 nC), improving switching performance. The TO-220 package maintains direct PCB compatibility with the original TO-220-3 footprint. ROHS3 compliance and active product status ensure long-term availability and supply chain stability.

FQP8N80C (onsemi, Active Status)

The FQP8N80C from onsemi offers the highest voltage rating (800V) and power dissipation capability (178W), providing maximum design margin for high-voltage applications. It delivers 8A continuous current and maintains TO-220-3 package compatibility. Higher input capacitance (2050 pF) and gate charge (45 nC) result in increased switching losses compared to alternatives. ROHS3 compliance and active product status support long-term production requirements. This part is suitable for applications prioritizing voltage headroom and thermal performance over switching efficiency.

STU5N62K3 (STMicroelectronics, Active Status)

The STU5N62K3 provides a compact TO-251 (IPAK) package alternative for space-constrained PCB layouts. It maintains 620V Vdss (20V margin) and delivers 4.2A continuous current, slightly below the original 5A specification. On-resistance (1.6 Ohm) is comparable to the original part. Power dissipation is limited to 70W, requiring thermal management consideration in high-power applications. ROHS3 compliance and active product status ensure supply availability. This part is suitable for applications where package size reduction is prioritized and current requirements do not exceed 4.2A.

Frequently Asked Questions (FAQ)

Q: Can the IXTP8N65X2 directly replace the IXTP5N60P without circuit modifications?

A: The IXTP8N65X2 is electrically compatible as a direct replacement. Both devices share identical gate drive voltage (10V), operating temperature range (-55°C to 150°C), and maximum gate voltage (±30V). The TO-220 package is mechanically compatible with TO-220-3 footprints. No circuit modifications are required for basic functionality. However, the improved electrical characteristics (lower Rds On, lower gate charge) may require PCB layout optimization to fully utilize performance benefits.

Q: What are the implications of using FQP8N80C in place of IXTP5N60P?

A: The FQP8N80C provides higher voltage rating (800V vs. 600V) and greater power dissipation capability (178W vs. 100W), making it suitable for applications requiring additional design margin. The higher input capacitance (2050 pF vs. 750 pF) and gate charge (45 nC vs. 14.2 nC) increase switching losses and may require gate driver adjustments. The TO-220-3 package is directly compatible. This substitution is appropriate for high-voltage applications where switching frequency is not critical.

Q: Is the STU5N62K3 suitable for all applications using IXTP5N60P?

A: The STU5N62K3 is suitable for applications where continuous drain current does not exceed 4.2A. The 620V Vdss rating exceeds the original 600V specification, providing adequate voltage margin. The TO-251 (IPAK) package is mechanically different from TO-220-3, requiring PCB layout redesign. Power dissipation is limited to 70W, which may be insufficient for high-power applications. This part is recommended for space-constrained designs with current requirements below 4.2A.

Q: What is the significance of RoHS3 compliance for substitute parts?

A: ROHS3 compliance indicates that substitute parts (IXTP8N65X2, FQP8N80C, STU5N62K3) meet European Union Restriction of Hazardous Substances regulations. This certification is required for products sold in regulated markets and ensures environmental and health compliance. The original IXTP5N60P does not specify RoHS status due to its obsolete classification. Active substitute parts with ROHS3 compliance support regulatory requirements for new designs and production.

Q: Are there thermal management differences between substitute parts?

A: Yes. The FQP8N80C offers the highest power dissipation rating (178W), suitable for high-power applications with adequate heatsinking. The IXTP8N65X2 provides 150W dissipation, balancing performance and thermal requirements. The STU5N62K3 is limited to 70W, requiring careful thermal design or reduced operating power. Package type also affects thermal performance: TO-220 and TO-220-3 packages provide superior heat dissipation compared to TO-251 (IPAK). Application thermal requirements should guide part selection.

Q: Can substitute parts be used interchangeably in existing designs?

A: Electrical interchangeability is confirmed for all three substitute parts within the specified parameter ranges. However, mechanical interchangeability depends on package type. IXTP8N65X2 and FQP8N80C (TO-220 variants) are directly compatible with TO-220-3 footprints. STU5N62K3 (TO-251 IPAK) requires PCB layout modification. Gate driver circuits may require optimization due to differences in gate charge and input capacitance. Thermal design must account for power dissipation differences. Prototype validation is recommended before full production transition.

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