IXTP5N50P N-Channel MOSFET 500V 4.8A Equivalent & Substitute Parts

Part Overview

The IXTP5N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 4.8A continuous drain current at 25°C. This device is housed in a TO-220-3 through-hole package and is part of the PolarHV™ series. The IXTP5N50P is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while meeting current product availability and compliance requirements.

Substiute Parts

IXTP5N50P

IXYSIn Stock: 1186IXTP5N50P Datasheet

Current PartRFQ

IXTP8N65X2

IXYSIn Stock: 991IXTP8N65X2 Datasheet

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AOT5N50

Alpha & Omega Semiconductor Inc.In Stock: 14140AOT5N50 Datasheet

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STP5NK50Z

STMicroelectronicsIn Stock: 5458STP5NK50Z Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXTP5N50P are selected based on electrical and mechanical compatibility within the following criteria:

Primary Substitution Parameters:

• Drain-to-Source Voltage (Vdss): Equal to or greater than 500V
• Continuous Drain Current (Id): Equal to or greater than 4.8A at 25°C
• Gate-to-Source Voltage (Vgs): Maximum rating of ±30V or greater
• Operating Temperature Range: Minimum -55°C to maximum 150°C or broader
• Mounting Type: Through Hole configuration
• Package: TO-220 or TO-220-3 compatible footprint
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)

Secondary Compatibility Factors:

• On-state resistance (Rds On) at specified gate voltage and drain current
• Gate charge (Qg) and input capacitance (Ciss) for switching performance
• Power dissipation capability
• Product status and compliance certifications

Substitute parts may exceed the original specifications in voltage rating, current capacity, power dissipation, or gate charge without compromising circuit functionality, provided all primary parameters are met or exceeded.

Parameter Comparison

Engineering Selection Recommendations

STP5NK50Z (STMicroelectronics)

The STP5NK50Z is an active product with ROHS3 compliance and REACH unaffected status. It maintains the 500V voltage rating and provides 4.4A continuous drain current, which is within 92% of the IXTP5N50P specification. The device operates across the identical temperature range (-55°C to 150°C) and uses the same TO-220-3 package. The STP5NK50Z exhibits slightly higher on-state resistance (1.5Ω vs. 1.4Ω) and increased gate charge (28nC vs. 12.6nC), resulting in lower power dissipation (70W vs. 89W). This part is suitable for direct replacement in applications where the lower current rating and power dissipation are acceptable.

IXTP8N65X2 (IXYS)

The IXTP8N65X2 is an active product from the Ultra X2 series with REACH unaffected status. It exceeds the IXTP5N50P in voltage rating (650V vs. 500V) and current capacity (8A vs. 4.8A), providing enhanced performance margins. The device operates across the identical temperature range and uses a compatible TO-220 package. On-state resistance is significantly lower (500mΩ vs. 1.4Ω), and power dissipation capability is substantially higher (150W vs. 89W). Gate charge remains comparable (12nC vs. 12.6nC). This part is suitable for applications requiring higher voltage or current headroom, though circuit design must account for the increased performance characteristics.

AOT5N50 (Alpha & Omega Semiconductor Inc.)

The AOT5N50 is classified as "Not For New Designs" and carries ROHS3 compliance with REACH unaffected status. It maintains the 500V voltage rating and provides 5A continuous drain current, which exceeds the IXTP5N50P by 4%. The device operates across the identical temperature range and uses a compatible TO-220-3 package. On-state resistance is marginally higher (1.5Ω vs. 1.4Ω), and gate charge is elevated (19nC vs. 12.6nC), resulting in higher power dissipation (104W vs. 89W). This part is suitable for legacy system maintenance and repair applications only, not for new design implementations.

Frequently Asked Questions (FAQ)

Q: Can the STP5NK50Z replace the IXTP5N50P in all applications?

A: The STP5NK50Z meets the primary substitution criteria with matching 500V voltage rating and compatible TO-220-3 package. However, the continuous drain current is 4.4A compared to 4.8A in the IXTP5N50P. Applications operating at or near the 4.8A specification limit require circuit analysis to confirm the 4.4A rating is sufficient. Power dissipation is lower (70W vs. 89W), which may be advantageous in thermally constrained designs.

Q: What are the advantages of using the IXTP8N65X2 over the IXTP5N50P?

A: The IXTP8N65X2 provides higher voltage rating (650V vs. 500V), higher current capacity (8A vs. 4.8A), and significantly lower on-state resistance (500mΩ vs. 1.4Ω). These characteristics result in reduced power dissipation in the transistor itself and improved thermal performance. The higher ratings provide design margin for applications with voltage or current transients. The trade-off is increased input capacitance (800pF vs. 620pF), which may affect switching speed in certain circuit topologies.

Q: Why is the AOT5N50 marked as "Not For New Designs"?

A: The AOT5N50 carries a "Not For New Designs" status, indicating the manufacturer has discontinued active development and recommends alternative parts for new applications. This part remains available for legacy system support and repair. New designs should prioritize active products such as the STP5NK50Z or IXTP8N65X2 to ensure long-term supply chain stability and access to manufacturer technical support.

Q: Are all substitute parts pin-compatible with the IXTP5N50P?

A: All substitute parts listed use the TO-220-3 or TO-220 package format with identical pin configurations (Gate, Drain, Source). Physical footprint compatibility is confirmed across all parts. PCB layout modifications are not required for package substitution.

Q: What is the impact of higher gate charge on circuit performance?

A: Gate charge (Qg) affects the speed at which the transistor switches on and off. The IXTP5N50P has 12.6nC gate charge, while the STP5NK50Z has 28nC. Higher gate charge requires longer switching times and increased gate drive current from the control circuit. Applications with high-frequency switching or tight timing requirements should evaluate gate charge specifications. The IXTP8N65X2 (12nC) and AOT5N50 (19nC) present intermediate options.

Q: Can the IXTP5N50P be used in new designs given its obsolete status?

A: The IXTP5N50P is classified as obsolete, meaning the manufacturer has discontinued production. While existing inventory may be available (1153 pcs reported in stock), new designs should not rely on this part for long-term production. Active alternatives such as the STP5NK50Z or IXTP8N65X2 are recommended for new design implementations to ensure supply chain continuity and manufacturer support.

Q: How do I determine which substitute part is best for my application?

A: Selection depends on three primary factors: (1) voltage and current requirements—all substitutes meet or exceed the 500V/4.8A specification; (2) thermal constraints—lower on-state resistance (IXTP8N65X2) reduces heat generation; (3) switching speed requirements—lower gate charge (IXTP5N50P, IXTP8N65X2) enables faster switching. Consult application-specific circuit requirements and thermal analysis to select the optimal part.

Q: Are there compliance or certification differences between the substitute parts?

A: The STP5NK50Z and AOT5N50 are ROHS3 compliant. All parts listed (IXTP5N50P, STP5NK50Z, IXTP8N65X2, AOT5N50) have REACH unaffected status and MSL rating of 1 (Unlimited). Compliance requirements for your application should be verified against your specific regulatory or customer standards.