IXTP50N20PM N-Channel MOSFET 200V 20A TO-220 Equivalent & Substitute Parts

Part Overview

The IXTP50N20PM is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by IXYS, rated for 200V drain-to-source voltage and 20A continuous drain current at 25°C. The device is housed in a TO-220 Isolated Tab package and is designed for through-hole mounting applications. This part is currently Active in product status with 893 pieces in stock inventory.

Equivalent and substitute parts are identified when alternative components meet or exceed the electrical and mechanical specifications of the primary device, enabling circuit designers to source components from multiple manufacturers or alternative inventory channels without redesign.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	20	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	60	mOhm @ 25A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70	nC @ 10V
Maximum Gate Voltage Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	2720	pF @ 25V
Power Dissipation (Max)	90	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Through Hole	-
Package / Case	TO-220-3	-
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitute parts for the IXTP50N20PM are qualified based on the following electrical and mechanical criteria:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 200V minimum
Continuous Drain Current (Id) @ 25°C: 20A minimum
Drive Voltage: 10V
Maximum Gate Voltage (Vgs): ±20V
Operating Temperature Range: -55°C to 175°C minimum
Mounting Type: Through Hole
Package Type: TO-220 variant

Allowable Variations:

Rds On (Max): Substitute parts may have equal or lower on-resistance values
Gate Charge (Qg): Substitute parts may have equal or lower gate charge values
Input Capacitance (Ciss): Substitute parts may have equal or lower capacitance values
Power Dissipation (Max): Substitute parts may have equal or higher power dissipation ratings
RoHS and REACH Compliance: Substitute parts must maintain equivalent compliance status

The identified substitute parts meet or exceed these criteria and are therefore electrically and mechanically compatible with the IXTP50N20PM in applications requiring N-Channel MOSFET functionality at 200V and 20A ratings.

Parameter Comparison

Parameter	IXTP50N20PM (Main)	IRFB4620PBF (Substitute)	PHP20NQ20T,127 (Substitute)	Unit
Manufacturer	IXYS	Infineon Technologies	NXP Semiconductors	-
Drain to Source Voltage (Vdss)	200	200	200	V
Continuous Drain Current (Id) @ 25°C	20	25	20	A (Tc)
Drive Voltage (Max Rds On)	10	10	10	V
Rds On (Max) @ Id, Vgs	60 @ 25A, 10V	72.5 @ 15A, 10V	130 @ 10A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	5 @ 250µA	5 @ 100µA	4 @ 1mA	V
Gate Charge (Qg) (Max) @ Vgs	70 @ 10V	38 @ 10V	65 @ 10V	nC
Maximum Gate Voltage Vgs (Max)	±20	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	2720 @ 25V	1710 @ 50V	2470 @ 25V	pF
Power Dissipation (Max)	90	144	150	W (Tc)
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	-
Package / Case	TO-220-3 Isolated Tab	TO-220-3	TO-220-3	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not Specified	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Not Applicable	-
Product Status	Active	Active	Active	-

Engineering Selection Recommendations

IRFB4620PBF (Infineon Technologies)

The IRFB4620PBF is an Active product manufactured by Infineon Technologies, rated for 200V and 25A continuous drain current. This device exceeds the current rating of the IXTP50N20PM and provides higher power dissipation capability (144W versus 90W). The IRFB4620PBF features lower gate charge (38 nC versus 70 nC) and reduced input capacitance (1710 pF versus 2720 pF), resulting in faster switching characteristics. Both devices maintain ROHS3 compliance and MSL Level 1 rating. The IRFB4620PBF is supplied in TO-220AB packaging with 9179 pieces in stock inventory.

PHP20NQ20T,127 (NXP Semiconductors)

The PHP20NQ20T,127 is an Active product manufactured by NXP Semiconductors, rated for 200V and 20A continuous drain current, matching the primary device specification. This device provides higher power dissipation capability (150W versus 90W) and lower gate threshold voltage (4V @ 1mA versus 5V @ 250µA). The PHP20NQ20T,127 features comparable gate charge (65 nC versus 70 nC) and input capacitance (2470 pF versus 2720 pF). The device is supplied in TO-220AB packaging with 9872 pieces in stock inventory. RoHS compliance status is not specified in the provided data.

Both substitute parts maintain the required voltage and current ratings, operating temperature range, and through-hole mounting configuration necessary for direct substitution in applications designed for the IXTP50N20PM.

Frequently Asked Questions (FAQ)

Q: Can the IRFB4620PBF replace the IXTP50N20PM in all applications?

A: The IRFB4620PBF meets or exceeds all critical electrical parameters of the IXTP50N20PM, including voltage rating (200V), current rating (25A exceeds 20A requirement), and operating temperature range (-55°C to 175°C). Both devices are through-hole mounted in TO-220 packages. The IRFB4620PBF features improved switching characteristics due to lower gate charge and input capacitance. Direct substitution is electrically valid; however, circuit board layout and thermal management design should be verified for the specific application.

Q: What is the difference between TO-220 Isolated Tab and TO-220AB packaging?

A: Both package types are TO-220-3 through-hole configurations suitable for PCB mounting. The Isolated Tab variant of the IXTP50N20PM provides electrical isolation between the tab and the drain connection, whereas the TO-220AB packages of the substitute parts may have different tab configurations. Pin compatibility and thermal interface requirements should be confirmed for the specific application circuit.

Q: Are the substitute parts RoHS compliant?

A: The IRFB4620PBF is ROHS3 compliant, matching the compliance status of the IXTP50N20PM. The PHP20NQ20T,127 RoHS compliance status is not specified in the provided technical data. Verification with the manufacturer or distributor is required if RoHS compliance is a mandatory requirement for the application.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IRFB4620PBF features 38 nC gate charge compared to 70 nC for the IXTP50N20PM, resulting in faster switching transitions and reduced gate drive power requirements. The PHP20NQ20T,127 features 65 nC gate charge, closely matching the primary device. Lower gate charge enables higher switching frequencies and improved efficiency in switching applications.

Q: What inventory considerations apply to these substitute parts?

A: The IXTP50N20PM has 893 pieces in stock. The IRFB4620PBF has 9179 pieces available, and the PHP20NQ20T,127 has 9872 pieces available. Substitute parts offer significantly higher inventory availability for applications requiring immediate component sourcing or high-volume production requirements.

Q: Can the PHP20NQ20T,127 be used as a direct pin-for-pin replacement?

A: The PHP20NQ20T,127 is rated for 200V and 20A, matching the IXTP50N20PM electrical specifications exactly. Both devices feature ±20V maximum gate voltage and operate across the -55°C to 175°C temperature range. Pin configuration compatibility in TO-220-3 packages supports direct substitution; however, thermal interface design and circuit board layout should be verified for the specific application.

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