IXTP4N80P Equivalent & Substitute Parts

Part Overview

The IXTP4N80P is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 3.6A continuous drain current at 25°C. This device is housed in a TO-220-3 through-hole package and is designed for high-voltage switching applications. The part is currently active in production with 1063 units in stock.

Substitute parts are necessary when the primary part becomes unavailable, when design requirements demand higher current capacity or improved thermal performance, or when alternative manufacturers' components offer equivalent electrical characteristics within the same package form factor.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	3.6	A
Power Dissipation (Max)	100	W
On-State Resistance (Rds On Max) @ 10V	3.4	Ohm
Gate Threshold Voltage (Vgs th Max)	5.5	V @ 100µA
Gate Charge (Qg Max) @ 10V	14.2	nC
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXTP4N80P is determined by the following criteria:

Primary Substitution Parameters:

Drain-to-Source Voltage (Vdss): Must equal 800V
Package Type: Must be TO-220-3 through-hole configuration
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Operating Temperature Range: Must support -55°C to 150°C minimum

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute parts with equal or higher current rating are acceptable
Power Dissipation: Substitute parts with equal or higher power rating are acceptable
On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Gate Threshold Voltage (Vgs th): Must be compatible with drive circuitry

All four substitute parts meet the primary substitution criteria. Differences in secondary parameters reflect design trade-offs between manufacturers and device series.

Parameter Comparison

Parameter	IXTP4N80P	STP5NK80Z	STP4N80K5	STP3N80K5	IRFBE30PBF
Manufacturer	IXYS	STMicroelectronics	STMicroelectronics	STMicroelectronics	Vishay Siliconix
Vdss (V)	800	800	800	800	800
Id @ 25°C (A)	3.6	4.3	3.0	2.5	4.1
Power Dissipation Max (W)	100	110	60	60	125
Rds On Max @ 10V (Ohm)	3.4	2.4	2.5	3.5	3.0
Vgs th Max (V)	5.5	4.5	5.0	5.0	4.0
Qg Max @ 10V (nC)	14.2	45.5	10.5	9.5	78
Ciss Max @ 25V (pF)	750	910	175	130	1300
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Active	Active	Active	Not For New Designs	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Affected

Engineering Selection Recommendations

STP5NK80Z (STMicroelectronics)

The STP5NK80Z is an active production part with superior electrical performance characteristics. It provides 4.3A continuous drain current, exceeding the IXTP4N80P by 0.7A, and delivers 110W power dissipation versus 100W. The on-state resistance is reduced to 2.4 Ohm, improving efficiency. This part is ROHS3 compliant and REACH unaffected, making it suitable for new designs and applications requiring enhanced thermal performance.

STP4N80K5 (STMicroelectronics)

The STP4N80K5 is an active production part with 3.0A continuous drain current and 2.5 Ohm on-state resistance. It provides a balanced alternative with lower gate charge (10.5 nC) compared to the IXTP4N80P, reducing switching losses. This part is ROHS3 compliant and REACH unaffected. Power dissipation is rated at 60W, which is lower than the main part.

STP3N80K5 (STMicroelectronics)

The STP3N80K5 carries a "Not For New Designs" product status designation. While electrically compatible with 800V rating and TO-220-3 packaging, this part is not recommended for new circuit designs. It provides 2.5A continuous drain current and 60W power dissipation. Selection of this part is appropriate only for legacy system maintenance or replacement applications.

IRFBE30PBF (Vishay Siliconix)

The IRFBE30PBF is an active production part with 4.1A continuous drain current and 125W power dissipation, both exceeding the IXTP4N80P specifications. On-state resistance is 3.0 Ohm. This part is ROHS3 compliant but carries REACH Affected status, requiring compliance verification for applications subject to REACH regulations. Gate charge is significantly higher at 78 nC, resulting in increased switching losses compared to the main part.

Frequently Asked Questions (FAQ)

Q: Can the STP5NK80Z directly replace the IXTP4N80P in existing designs?

A: Yes. Both devices share identical 800V Vdss rating, TO-220-3 package configuration, and -55°C to 150°C operating temperature range. The STP5NK80Z provides superior current handling (4.3A versus 3.6A) and lower on-state resistance (2.4 Ohm versus 3.4 Ohm), making it a direct upgrade with no circuit modifications required.

Q: What is the significance of the "Not For New Designs" status on the STP3N80K5?

A: This designation indicates that STMicroelectronics has discontinued active development and marketing of this part for new applications. While the device remains electrically functional and available in inventory, it should not be selected for new circuit designs. Use this part only for replacement or maintenance of existing systems already utilizing this component.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXTP4N80P requires 14.2 nC, while the STP3N80K5 requires only 9.5 nC. Lower gate charge reduces switching losses and allows faster switching speeds. The IRFBE30PBF at 78 nC requires significantly more drive energy, potentially requiring circuit redesign to accommodate higher gate current demands.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All four substitute parts carry ROHS3 Compliant certification. However, the IRFBE30PBF carries REACH Affected status, while the IXTP4N80P, STP5NK80Z, STP4N80K5, and STP3N80K5 are REACH Unaffected. Applications subject to REACH regulations must account for this distinction.

Q: What is the practical difference between 3.6A and 4.3A continuous drain current ratings?

A: The continuous drain current rating defines the maximum sustained current the device can conduct at 25°C without exceeding thermal limits. The STP5NK80Z at 4.3A can handle 19% higher continuous current than the IXTP4N80P at 3.6A. This allows operation at higher power levels or provides additional thermal margin in existing applications.

Q: Can the IRFBE30PBF be used as a substitute despite higher gate charge?

A: Yes, provided the gate drive circuit can supply the required gate current. The IRFBE30PBF requires 78 nC at 10V, compared to 14.2 nC for the IXTP4N80P. If the existing gate drive circuit is current-limited, the IRFBE30PBF may not switch as quickly, potentially affecting circuit performance. Verification of gate drive capability is necessary before selection.

Q: Which substitute offers the best on-state resistance performance?

A: The STP5NK80Z provides the lowest on-state resistance at 2.4 Ohm, compared to 3.4 Ohm for the IXTP4N80P. Lower on-state resistance reduces conduction losses and heat generation, improving overall circuit efficiency. This makes the STP5NK80Z the preferred choice for applications prioritizing thermal performance and power efficiency.

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