IXTP4N70X2M N-Channel 700V 4A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP4N70X2M is an N-Channel MOSFET manufactured by IXYS in the Ultra X2 series, rated for 700V drain-to-source voltage with 4A continuous drain current at 25°C. The device is packaged in TO-220-3 with isolated tab configuration and is designed for through-hole mounting applications requiring high-voltage switching capability. The part is currently active in production with 1017 units in stock.

Substitute parts are necessary when the IXTP4N70X2M reaches end-of-life status, when alternative manufacturers' components offer improved performance characteristics, or when design requirements necessitate enhanced current ratings, reduced on-resistance, or different thermal dissipation capabilities within compatible voltage and package specifications.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	700	V
Continuous Drain Current (Id) @ 25°C	4	A (Tc)
On-Resistance (Rds On) @ 2A, 10V	850	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V
Gate Charge (Qg) @ 10V	11.8	nC
Power Dissipation (Max)	30	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3 Full Pack, Isolated Tab	—
Mounting Type	Through Hole	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IXTP4N70X2M is determined by the following critical parameters:

Voltage Compatibility: All substitute parts must maintain a Vdss rating of 700V or higher to ensure safe operation in the original application circuit. Parts rated below 700V (such as 600V devices) operate outside the specified voltage envelope and are not direct substitutes.

Current Rating: Substitute parts must support a minimum continuous drain current (Id) equal to or exceeding 4A at 25°C. Parts with lower current ratings cannot reliably handle the design load.

Package and Mounting: All substitutes must use TO-220 package variants with through-hole mounting to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink interfaces.

Drive Voltage: All parts operate with 10V gate drive voltage specification, ensuring gate driver circuit compatibility.

Temperature Range: Operating temperature range must encompass the original specification of -55°C to 150°C (TJ) or be compatible with the application's actual operating conditions.

Compliance: All substitute parts must maintain ROHS3 compliance and EAR99 export classification to ensure regulatory alignment with the original component.

Based on these criteria, substitute parts are grouped into two categories:

Category A – Direct Voltage Match (700V): Parts with 700V Vdss rating that provide equivalent or superior current handling and thermal performance.

Category B – Lower Voltage Alternatives (600V–650V): Parts with reduced Vdss ratings that offer enhanced current capacity and improved on-resistance characteristics but operate at lower maximum voltage. These are suitable only for applications where the actual circuit voltage does not exceed the substitute part's Vdss rating.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	Temp Range (°C)	Package	Product Status
IXTP4N70X2M	IXYS	700	4	850 @ 2A, 10V	11.8 @ 10V	30	-55 to 150	TO-220-3 Isolated Tab	Active
IPA70R750P7SXKSA1	Infineon Technologies	700	6.5	750 @ 1.4A, 10V	8.3 @ 400V	21.2	-40 to 150	TO-220-3 Full Pack	Last Time Buy
IPAN65R650CEXKSA1	Infineon Technologies	650	10.1	650 @ 2.1A, 10V	23 @ 10V	28	-40 to 150	TO-220-3 Full Pack	Active
R6007ENX	Rohm Semiconductor	600	7	620 @ 2.4A, 10V	20 @ 10V	40	-55 to 150	TO-220-3 Full Pack	Active
R6007KNX	Rohm Semiconductor	600	7	620 @ 2.4A, 10V	14.5 @ 10V	46	-55 to 150	TO-220-3 Full Pack	Active
R6008ANX	Rohm Semiconductor	600	8	800 @ 4A, 10V	21 @ 10V	50	-55 to 150	TO-220-3 Full Pack	Not For New Designs
STP10NK60ZFP	STMicroelectronics	600	10	750 @ 4.5A, 10V	70 @ 10V	35	-55 to 150	TO-220-3 Full Pack	Active
STP10NK70ZFP	STMicroelectronics	700	8.6	850 @ 4.5A, 10V	90 @ 10V	35	-55 to 150	TO-220-3 Full Pack	Active
TK6A60W,S4VX	Toshiba Semiconductor and Storage	600	6.2	750 @ 3.1A, 10V	12 @ 10V	30	-55 to 150	TO-220-3 Full Pack	Active
TK7A60W5,S5VX	Toshiba Semiconductor and Storage	600	7	650 @ 3.5A, 10V	16 @ 10V	30	-55 to 150	TO-220-3 Full Pack	Active
TK9A60D(STA4,Q,M)	Toshiba Semiconductor and Storage	600	9	830 @ 4.5A, 10V	24 @ 10V	45	-55 to 150	TO-220-3 Full Pack	Active

Engineering Selection Recommendations

Category A – Direct 700V Voltage Substitutes

IPA70R750P7SXKSA1 (Infineon Technologies CoolMOS™ P7): This part provides equivalent 700V Vdss rating with superior current capacity (6.5A versus 4A) and reduced on-resistance (750mOhm versus 850mOhm). Gate charge is lower at 8.3nC, reducing switching losses. Operating temperature minimum is -40°C versus -55°C on the original part. Product status is Last Time Buy, indicating limited future availability. ROHS3 compliant.

STP10NK70ZFP (STMicroelectronics SuperMESH™): This part maintains 700V Vdss with significantly higher current rating (8.6A) and equivalent on-resistance (850mOhm). Gate charge is higher at 90nC, indicating increased switching energy requirements. Power dissipation is 35W. Product status is Active with 5705 units in stock. ROHS3 compliant and suitable for new designs.

Category B – Lower Voltage Alternatives (600V–650V)

IPAN65R650CEXKSA1 (Infineon Technologies CoolMOS™): Rated at 650V Vdss with 10.1A continuous current and 650mOhm on-resistance. This part is suitable only for applications where circuit voltage does not exceed 650V. Product status is Active with 1527 units in stock. ROHS3 compliant.

R6007ENX (Rohm Semiconductor): Rated at 600V Vdss with 7A current and 620mOhm on-resistance. Operating temperature range matches the original (-55°C to 150°C). Product status is Active with 2400 units in stock. ROHS3 compliant. Suitable for 600V maximum circuit applications.

R6007KNX (Rohm Semiconductor): Rated at 600V Vdss with 7A current and 620mOhm on-resistance. Gate charge is lower at 14.5nC. Operating temperature range matches the original. Product status is Active with 783 units in stock. ROHS3 compliant.

R6008ANX (Rohm Semiconductor): Rated at 600V Vdss with 8A current and 800mOhm on-resistance. Product status is Not For New Designs, indicating obsolescence trajectory. Not recommended for new circuit designs. ROHS3 compliant.

STP10NK60ZFP (STMicroelectronics SuperMESH™): Rated at 600V Vdss with 10A current and 750mOhm on-resistance. Gate charge is significantly higher at 70nC. Product status is Active with 42200 units in stock. ROHS3 compliant and widely available.

TK6A60W,S4VX (Toshiba Semiconductor DTMOSIV): Rated at 600V Vdss with 6.2A current and 750mOhm on-resistance. Gate charge is 12nC. Operating temperature maximum is 150°C (no minimum specified). Product status is Active with 20300 units in stock. ROHS3 compliant.

TK7A60W5,S5VX (Toshiba Semiconductor DTMOSIV): Rated at 600V Vdss with 7A current and 650mOhm on-resistance. Gate charge is 16nC. Operating temperature maximum is 150°C. Product status is Active with 2800 units in stock. ROHS3 compliant.

TK9A60D(STA4,Q,M) (Toshiba Semiconductor π-MOSVII): Rated at 600V Vdss with 9A current and 830mOhm on-resistance. Gate charge is 24nC. Operating temperature maximum is 150°C. Product status is Active with 871 units in stock. ROHS3 compliant.

Selection Criteria Summary:

For applications requiring strict 700V voltage compliance, select either IPA70R750P7SXKSA1 or STP10NK70ZFP. The Infineon part offers lower gate charge and reduced on-resistance but has Last Time Buy status. The STMicroelectronics part is Active and widely available.

For applications where circuit voltage does not exceed 650V, the IPAN65R650CEXKSA1 offers superior current capacity and lower on-resistance.

For applications where circuit voltage does not exceed 600V, multiple options exist. STP10NK60ZFP offers the highest current rating (10A) and largest inventory. Rohm and Toshiba alternatives provide comparable performance with varying gate charge and thermal characteristics.

All recommended substitutes maintain ROHS3 compliance, EAR99 export classification, and through-hole TO-220 package compatibility with the original IXTP4N70X2M.

Frequently Asked Questions (FAQ)

Q: Can I use a 600V-rated MOSFET in place of the IXTP4N70X2M in a 700V application?

A: No. A 600V-rated MOSFET (Vdss = 600V) cannot be used in an application where the circuit voltage reaches or exceeds 600V. The IXTP4N70X2M is rated for 700V operation. Using a lower-voltage part risks device failure and potential circuit damage. Only substitute parts with Vdss ≥ 700V for direct replacement in 700V applications.

Q: What is the difference between the IPA70R750P7SXKSA1 and STP10NK70ZFP? Both are 700V parts.

A: Both parts maintain 700V Vdss rating and are suitable direct substitutes. The IPA70R750P7SXKSA1 has lower gate charge (8.3nC versus 90nC), resulting in lower switching losses and faster switching speed. The STP10NK70ZFP has higher current capacity (8.6A versus 6.5A) and significantly larger inventory availability (5705 units versus 780 units). The IPA70R750P7SXKSA1 has Last Time Buy status, indicating limited future availability. Choose based on switching speed requirements and long-term supply availability.

Q: Are all substitute parts compatible with my existing PCB layout?

A: All listed substitute parts use TO-220-3 package variants with through-hole mounting, ensuring mechanical compatibility with standard TO-220 footprints and heatsink interfaces. However, verify that your PCB layout accommodates the specific package variant (isolated tab versus full pack) and pin spacing. Consult the datasheet for each substitute part to confirm exact pin configuration and thermal interface requirements.

Q: What does "Last Time Buy" status mean for the IPA70R750P7SXKSA1?

A: Last Time Buy status indicates that the manufacturer has announced end-of-life for this part. Existing inventory may be available for purchase, but production has ceased or will cease. After the Last Time Buy date, the part will no longer be available from the manufacturer. For new designs or long-term production requirements, select parts with Active status such as STP10NK70ZFP.

Q: Can I use the R6008ANX, which is marked "Not For New Designs"?

A: The R6008ANX is available in existing inventory (15126 units) but is not recommended for new circuit designs. This status indicates the manufacturer is transitioning away from this part. Use only for replacement or repair of existing equipment. For new designs, select parts with Active status.

Q: How do I determine which 600V substitute is best for my application?

A: Evaluate based on three criteria: (1) Required continuous drain current – select a part with Id rating ≥ your design requirement; (2) Switching frequency and gate drive capability – lower gate charge (Qg) reduces switching losses at high frequencies; (3) Thermal requirements – compare power dissipation (Pmax) and on-resistance (Rds On) to ensure adequate heatsinking. For high-volume production, prioritize parts with large inventory and Active status.

Q: What is the significance of on-resistance (Rds On) differences between parts?

A: On-resistance directly affects power dissipation and heat generation. Lower Rds On reduces conduction losses. For example, the IPAN65R650CEXKSA1 has 650mOhm Rds On versus 850mOhm on the IXTP4N70X2M. At 4A continuous current, this reduces power dissipation by approximately 2.56W, reducing heatsink requirements. However, Rds On is measured at different current levels across parts, so direct comparison requires normalizing to the same test conditions.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are ROHS3 compliant and maintain EAR99 export classification, matching the regulatory status of the original IXTP4N70X2M. This ensures compatibility with environmental and export regulations.

Q: What is the difference between operating temperature ranges specified as "-55°C to 150°C" versus "150°C maximum"?

A: The IXTP4N70X2M specifies -55°C to 150°C (TJ), indicating the junction temperature range for reliable operation. Some substitute parts (such as TK6A60W,S4VX) specify only 150°C maximum without a minimum temperature. Verify that the substitute part's temperature range encompasses your application's actual operating environment. If your application requires operation below 0°C, confirm the substitute part supports this range.

Q: Can I parallel multiple IXTP4N70X2M devices with substitute parts?

A: Paralleling MOSFETs from different manufacturers or series is not recommended without detailed analysis. Differences in on-resistance temperature coefficients, threshold voltage, and gate charge can cause unequal current sharing and thermal stress. If paralleling is required, use identical parts from the same manufacturer and production lot.

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