IXTP4N60P N-Channel 600V 4A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP4N60P is an N-Channel 600V 4A MOSFET manufactured by IXYS in the PolarHV™ series, housed in a TO-220-3 through-hole package. This device is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing production support, maintenance, and design continuity. The IXTP4N60P serves applications requiring high-voltage switching with moderate current handling in industrial and power conversion circuits.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	4	A
Rds On (Max) @ 2A, 10V	2	Ohm
Gate Threshold Voltage (Vgs(th)) @ 100µA	5.5	V
Gate Charge (Qg) @ 10V	13	nC
Input Capacitance (Ciss) @ 25V	635	pF
Power Dissipation (Max)	89	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the IXTP4N60P is determined by strict alignment of electrical and mechanical parameters within the N-Channel MOSFET category. The following criteria establish valid substitution relationships:

Primary Substitution Criteria:

FET Type: N-Channel (mandatory match)
Drain to Source Voltage (Vdss): 600V minimum (equal or higher voltage rating acceptable)
Continuous Drain Current (Id): 4A minimum (equal or higher current rating acceptable)
Mounting Type: Through Hole (mandatory match)
Package: TO-220-3 or compatible TO-220 variant (mechanical compatibility required)
Operating Temperature Range: -55°C to 150°C (minimum overlap required)
Gate Drive Voltage: 10V (standard drive voltage for this class)

Secondary Electrical Parameters (must remain within acceptable operating margins):

Rds On (Max): Lower or equal values acceptable
Gate Threshold Voltage (Vgs(th)): Within ±1V of original specification
Gate Charge (Qg): Lower values preferred for reduced switching losses
Input Capacitance (Ciss): Lower values preferred for faster switching

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria with minimal electrical variation) and Functional Alternatives (meeting primary criteria with acceptable electrical trade-offs).

Parameter Comparison

Parameter	IXTP4N60P	IXTP4N65X2	AOT4N60	IRFBC30APBF	STP4N80K5	STP4NK60Z
Manufacturer	IXYS	IXYS	Alpha & Omega	Vishay Siliconix	STMicroelectronics	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	600	650	600	600	800	600
Id @ 25°C (A)	4	4	4	3.6	3	4
Rds On (Max) @ 10V (Ohm)	2	0.85	2.2	2.2	2.5	2
Vgs(th) (Max) (V)	5.5	5	4.5	4.5	5	4.5
Gate Charge (Qg) @ 10V (nC)	13	8.3	18	23	10.5	26
Ciss @ 25V (pF)	635	455	615	510	175	510
Power Dissipation (Max) (W)	89	80	104	74	60	70
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Not For New Designs	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalent (Recommended Primary Substitutes):

STP4NK60Z (STMicroelectronics) — This part provides the closest functional match to the IXTP4N60P. It maintains identical Vdss (600V) and Id (4A) ratings with matching Rds On (2 Ohm @ 2A, 10V). The STP4NK60Z is actively produced, RoHS3 compliant, and available in high inventory (45,200 pcs). The SuperMESH™ technology offers improved switching characteristics with lower gate charge (26 nC vs. 13 nC) and reduced input capacitance (510 pF vs. 635 pF), resulting in lower switching losses. This part is the preferred replacement for new production and maintenance applications.

IXTP4N65X2 (IXYS) — This IXYS part maintains the same manufacturer lineage as the original IXTP4N60P. It provides a 50V higher voltage rating (650V vs. 600V), which offers additional design margin in high-voltage applications. The IXTP4N65X2 delivers superior electrical performance with lower Rds On (850 mOhm vs. 2 Ohm), reduced gate charge (8.3 nC vs. 13 nC), and lower input capacitance (455 pF vs. 635 pF). The part is actively produced, RoHS3 compliant, and suitable for applications requiring enhanced efficiency. Inventory availability is moderate (2,084 pcs).

Functional Alternatives (Secondary Substitutes):

AOT4N60 (Alpha & Omega Semiconductor) — This part matches the IXTP4N60P in voltage (600V) and current (4A) ratings with identical Rds On (2.2 Ohm). However, the AOT4N60 is classified as "Not For New Designs," limiting its suitability for new production. It is RoHS3 compliant and available in moderate inventory (1,550 pcs). This part is suitable only for maintenance and repair of existing systems using the original IXTP4N60P.

IRFBC30APBF (Vishay Siliconix) — This part provides a 600V voltage rating matching the IXTP4N60P but with reduced continuous drain current (3.6A vs. 4A). The IRFBC30APBF is actively produced and RoHS3 compliant. It is suitable for applications where the 3.6A current rating is sufficient. The higher gate charge (23 nC vs. 13 nC) and increased input capacitance (510 pF vs. 635 pF) result in higher switching losses. This part should be selected only when current derating is acceptable.

STP4N80K5 (STMicroelectronics) — This part offers an elevated voltage rating (800V vs. 600V) with reduced continuous drain current (3A vs. 4A). The STP4N80K5 is actively produced, RoHS3 compliant, and available in moderate inventory (1,874 pcs). The SuperMESH5™ technology provides excellent switching performance with low gate charge (10.5 nC) and significantly reduced input capacitance (175 pF @ 100V). This part is suitable for applications requiring higher voltage operation with acceptable current derating.

Frequently Asked Questions (FAQ)

Q: Can the IXTP4N60P be directly replaced with the STP4NK60Z?

A: Yes. The STP4NK60Z provides direct functional equivalence with identical Vdss (600V), Id (4A), and Rds On (2 Ohm @ 2A, 10V) specifications. Both devices use TO-220-3 packaging and operate across the same temperature range (-55°C to 150°C). The STP4NK60Z is actively produced and RoHS3 compliant, making it the recommended replacement for the obsolete IXTP4N60P.

Q: What is the difference between the IXTP4N65X2 and the IXTP4N60P?

A: The IXTP4N65X2 has a higher voltage rating (650V vs. 600V) and superior electrical performance characteristics. It features lower on-resistance (850 mOhm vs. 2 Ohm), reduced gate charge (8.3 nC vs. 13 nC), and lower input capacitance (455 pF vs. 635 pF). Both parts maintain 4A continuous drain current and TO-220-3 packaging. The IXTP4N65X2 is actively produced and offers better efficiency in switching applications.

Q: Is the IRFBC30APBF a suitable replacement for the IXTP4N60P?

A: The IRFBC30APBF is a functional alternative with matching 600V voltage rating but reduced continuous drain current (3.6A vs. 4A). It is suitable only for applications where the lower current rating does not exceed design requirements. The higher gate charge (23 nC) and input capacitance (510 pF) result in increased switching losses compared to the original part. This substitution requires design verification.

Q: Why does the STP4N80K5 have a lower current rating than the IXTP4N60P?

A: The STP4N80K5 is designed for higher voltage operation (800V vs. 600V). The reduced continuous drain current (3A vs. 4A) reflects the trade-off between voltage rating and current capacity in MOSFET design. This part is suitable only for applications where the 3A current rating is sufficient and the higher voltage margin is beneficial.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed are RoHS3 compliant except the original IXTP4N60P, which has no RoHS status specified. The IRFBC30APBF is REACH Affected, while all other substitutes are REACH Unaffected. Compliance requirements should be verified against specific application and regional regulations.

Q: Can the IXTP4N60P be used in applications requiring the STP4N80K5?

A: No. The IXTP4N60P has a lower voltage rating (600V vs. 800V) and cannot be substituted in applications requiring 800V operation. Doing so would result in device failure under overvoltage conditions. Voltage rating is a non-negotiable parameter in MOSFET selection.

Q: What is the inventory status of substitute parts?

A: STP4NK60Z has the highest inventory availability (45,200 pcs), followed by IXTP4N65X2 (2,084 pcs), IRFBC30APBF (2,093 pcs), STP4N80K5 (1,874 pcs), and AOT4N60 (1,550 pcs). The original IXTP4N60P remains in stock (10,126 pcs) but is obsolete. For long-term supply security, STP4NK60Z is the recommended choice.

Q: Do all substitute parts use the same TO-220-3 package?

A: Yes. All substitute parts listed use TO-220-3 or compatible TO-220 packaging, ensuring mechanical and thermal compatibility with the original IXTP4N60P. Pin configuration and mounting requirements are identical across all listed parts.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (such as in the IXTP4N65X2 at 8.3 nC) results in faster switching and reduced driver power consumption. Higher gate charge (such as in the STP4NK60Z at 26 nC) requires more driver energy but may offer other performance benefits. Selection depends on driver capability and switching frequency requirements.

Q: Should the AOT4N60 be used in new designs?

A: No. The AOT4N60 is classified as "Not For New Designs" by the manufacturer. It is suitable only for maintenance and repair of existing systems. For new production, select either the STP4NK60Z or IXTP4N65X2.

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