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IXTP460P2 N-Channel 500V 24A MOSFET Equivalent & Substitute Parts
Part Overview
The IXTP460P2 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by IXYS, rated for 500V drain-to-source voltage and 24A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is part of the PolarP2™ series. This component is designated as Last Time Buy, indicating that the original manufacturer has ceased production. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and field replacements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 500 | V |
| Continuous Drain Current (Id) @ 25°C | 24 | A |
| On-State Resistance (Rds On) @ 12A, 10V | 270 | mOhm |
| Gate-Source Threshold Voltage (Vgs(th)) @ 250µA | 4.5 | V |
| Gate Charge (Qg) @ 10V | 48 | nC |
| Maximum Gate-Source Voltage (Vgs) | ±30 | V |
| Input Capacitance (Ciss) @ 25V | 2890 | pF |
| Power Dissipation (Max) | 480 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | TO-220-3 | — |
| Mounting Type | Through Hole | — |
Substitute Part Grouping Explanation
Substitution of the IXTP460P2 is determined by the following critical electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
- Continuous Drain Current (Id): Must equal or exceed 24A at 25°C
- On-State Resistance (Rds On): Must not significantly exceed 270mOhm to maintain thermal performance
- Gate-Source Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuits
- Maximum Gate-Source Voltage (Vgs): Must support ±30V or greater
- Package Type: Must be TO-220-3 through-hole configuration
- Operating Temperature Range: Must support -55°C to 150°C
Substitution Categories:
Category 1: Direct Equivalents (Matching or Exceeding All Parameters) Parts that meet or exceed the IXTP460P2 specifications across all critical parameters, including current rating, voltage rating, and thermal performance.
Category 2: Functional Substitutes (Reduced Current Rating) Parts rated for 500V with current ratings between 16A and 22A. These devices are suitable for applications where the full 24A capability is not required, provided the application current does not exceed the substitute part's rating.
Category 3: Functional Substitutes (Elevated Voltage Rating) Parts rated for 550V or higher with current ratings of 16A or greater. These devices provide additional voltage margin and are suitable for 500V applications.
Category 4: Limited Substitutes (Reduced Current and Power Dissipation) Parts rated for 500V with current ratings below 16A. These devices are suitable only for applications with significantly reduced current requirements.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Vgs(th) (V) | Qg (nC) | Vgs Max (V) | Ciss (pF) | Pd Max (W) | Package | Status |
|---|---|---|---|---|---|---|---|---|---|---|---|
| IXTP460P2 | IXYS | 500 | 24 | 270 @ 12A | 4.5 @ 250µA | 48 @ 10V | ±30 | 2890 @ 25V | 480 | TO-220-3 | Last Time Buy |
| IXTP16N50P | IXYS | 500 | 16 | 400 @ 8A | 5.5 @ 250µA | 43 @ 10V | ±30 | 2250 @ 25V | 300 | TO-220-3 | Active |
| FDP18N50 | onsemi | 500 | 18 | 265 @ 9A | 5 @ 250µA | 60 @ 10V | ±30 | 2860 @ 25V | 235 | TO-220-3 | Active |
| FDP20N50F | onsemi | 500 | 20 | 260 @ 10A | 5 @ 250µA | 65 @ 10V | ±30 | 3390 @ 25V | 250 | TO-220-3 | Active |
| FDP22N50N | onsemi | 500 | 22 | 220 @ 11A | 5 @ 250µA | 65 @ 10V | ±30 | 3200 @ 25V | 312.5 | TO-220-3 | Active |
| IPP50R250CPXKSA1 | Infineon Technologies | 500 | 13 | 250 @ 7.8A | 3.5 @ 520µA | 36 @ 10V | ±20 | 1420 @ 100V | 114 | TO-220-3 | Active |
| IPP50R280CEXKSA1 | Infineon Technologies | 500 | 13 | 280 @ 4.2A | 3.5 @ 350µA | 32.6 @ 10V | ±20 | 773 @ 100V | 92 | TO-220-3 | Active |
| SIHP18N50C-E3 | Vishay Siliconix | 500 | 18 | 270 @ 10A | 5 @ 250µA | 76 @ 10V | ±30 | 2942 @ 25V | 223 | TO-220-3 | Active |
| STF19NM50N | STMicroelectronics | 500 | 14 | 250 @ 7A | 4 @ 250µA | 34 @ 10V | ±25 | 1000 @ 50V | 30 | TO-220-3 | Active |
| STP18N55M5 | STMicroelectronics | 550 | 16 | 192 @ 8A | 5 @ 250µA | 31 @ 10V | ±25 | 1260 @ 100V | 110 | TO-220-3 | Active |
| STP19NM50N | STMicroelectronics | 500 | 14 | 250 @ 7A | 4 @ 250µA | 34 @ 10V | ±25 | 1000 @ 50V | 110 | TO-220-3 | Active |
Engineering Selection Recommendations
Recommended Primary Substitute: FDP22N50N
The FDP22N50N from onsemi is the closest functional equivalent to the IXTP460P2. This device is rated for 500V and 22A continuous drain current, providing 92% of the original part's current capability. The on-state resistance of 220mOhm at 11A is superior to the IXTP460P2's 270mOhm at 12A, resulting in lower conduction losses. The FDP22N50N is in Active product status with full RoHS3 compliance and REACH unaffected designation. The TO-220-3 package is mechanically and electrically identical to the original part.
Secondary Substitute: FDP20N50F
The FDP20N50F from onsemi provides 500V and 20A continuous drain current, delivering 83% of the original part's current capability. This device features an on-state resistance of 260mOhm at 10A and is suitable for applications where the full 24A rating is not required. The FDP20N50F maintains full Active status and compliance certifications.
Tertiary Substitute: SIHP18N50C-E3
The SIHP18N50C-E3 from Vishay Siliconix is rated for 500V and 18A continuous drain current, providing 75% of the original part's current capability. This device matches the IXTP460P2's on-state resistance specification of 270mOhm and supports the full ±30V gate-source voltage range. The SIHP18N50C-E3 is in Active status with full compliance certifications.
Alternative Substitute: STP18N55M5
The STP18N55M5 from STMicroelectronics provides elevated voltage rating at 550V with 16A continuous drain current. This device is suitable for applications requiring additional voltage margin above the 500V specification. The superior on-state resistance of 192mOhm at 8A provides improved thermal performance. The STP18N55M5 is in Active status with full compliance certifications.
Limited Substitutes: IPP50R250CPXKSA1 and IPP50R280CEXKSA1
The Infineon CoolMOS™ devices (IPP50R250CPXKSA1 and IPP50R280CEXKSA1) are rated for 500V with 13A continuous drain current. These parts are suitable only for applications where current requirements do not exceed 13A. Both devices are in Active status with full compliance certifications. The reduced gate-source voltage rating (±20V) may require gate drive circuit verification.
Not Recommended: STF19NM50N and STP19NM50N
The STMicroelectronics STF19NM50N and STP19NM50N devices are rated for 500V and 14A continuous drain current. These parts provide only 58% of the original part's current capability and are suitable only for significantly reduced current applications. The reduced maximum gate-source voltage (±25V) may require gate drive circuit verification.
Not Recommended: IXTP16N50P
The IXTP16N50P from IXYS is rated for 500V and 16A continuous drain current, providing only 67% of the original part's current capability. The on-state resistance of 400mOhm at 8A is significantly higher than the IXTP460P2, resulting in substantially increased conduction losses and thermal dissipation.
Frequently Asked Questions (FAQ)
Q: Can the FDP22N50N directly replace the IXTP460P2 in all applications?
A: The FDP22N50N is suitable for applications where the continuous drain current does not exceed 22A. If the application requires the full 24A capability of the IXTP460P2, the FDP22N50N is not appropriate. Verify the actual application current requirement before substitution.
Q: What is the significance of the on-state resistance (Rds On) difference between the IXTP460P2 and substitute parts?
A: On-state resistance directly affects conduction losses and thermal dissipation. The IXTP460P2 specifies 270mOhm at 12A. Substitute parts with lower Rds On values (such as FDP22N50N at 220mOhm) generate less heat during operation. Substitute parts with higher Rds On values (such as IXTP16N50P at 400mOhm) generate more heat and may require thermal management verification.
Q: Are all substitute parts mechanically compatible with the IXTP460P2 footprint?
A: All recommended substitute parts use the TO-220-3 through-hole package, which is mechanically and electrically compatible with the IXTP460P2 footprint. However, verify the specific package variant (TO-220-3, TO-220AB, or TO-220FP) against your PCB design to ensure proper fit.
Q: What is the impact of different gate-source threshold voltages (Vgs(th)) on circuit operation?
A: The gate-source threshold voltage determines the gate voltage at which the device begins to conduct. The IXTP460P2 specifies 4.5V at 250µA. Substitute parts with different threshold voltages (ranging from 3.5V to 5.5V) may affect gate drive timing and switching characteristics. Verify that your gate drive circuit can reliably drive the substitute part's threshold voltage.
Q: Can I use the STP18N55M5 (550V rated) in a 500V application?
A: Yes. The STP18N55M5 is rated for 550V drain-to-source voltage, which exceeds the 500V requirement of the IXTP460P2. This device provides additional voltage margin and is suitable for 500V applications. However, the continuous drain current rating of 16A is lower than the IXTP460P2's 24A rating.
Q: What does "Last Time Buy" status mean for the IXTP460P2?
A: Last Time Buy indicates that the manufacturer (IXYS) has ceased production of the IXTP460P2 and will not manufacture additional units. Existing inventory may be available from authorized distributors, but long-term availability is not guaranteed. Substitution with an Active status part is recommended for new designs and future production runs.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All recommended substitute parts listed in this document are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.
Q: How do I determine which substitute part is appropriate for my application?
A: Identify the maximum continuous drain current required by your application. Select a substitute part with a continuous drain current rating equal to or greater than this requirement. Verify that the on-state resistance and thermal dissipation characteristics are acceptable for your thermal management design. Confirm that the gate drive circuit can reliably drive the substitute part's gate-source threshold voltage and maximum gate-source voltage rating.
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