IXTP42N15T N-Channel 150V 42A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP42N15T is an N-Channel MOSFET manufactured by IXYS, designed for high-current switching applications requiring 150V drain-to-source voltage capability and 42A continuous drain current at 25°C. This device is packaged in a TO-220-3 through-hole configuration and is classified as an active product with full RoHS3 compliance.

Substitute parts become necessary when the primary part experiences extended lead times, inventory constraints, or when design flexibility permits operation within the electrical and mechanical parameters of alternative qualified devices. The substitute parts listed maintain compatibility with the original design through matching voltage ratings, package type, and thermal operating range.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	42	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	45	mOhm @ 500mA, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	4.5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21	nC @ 10V
Maximum Gate Voltage Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	1880	pF @ 25V
Power Dissipation (Max)	200	W
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Through Hole	-
Package / Case	TO-220-3	-
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitution of the IXTP42N15T is permissible with parts that maintain the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

Drain to Source Voltage (Vdss): 150V
Package Type: TO-220-3 through-hole configuration
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 175°C (TJ)
Mounting Type: Through Hole

Allowable Variation Parameters:

Continuous Drain Current (Id): Substitute parts may operate at lower current ratings (35A vs. 42A) provided the application does not exceed the substitute's rated current
Power Dissipation (Max): Substitute parts may have lower power dissipation ratings (144W vs. 200W) provided thermal design accommodates the reduced capability
Gate Charge (Qg): Variation permitted within the range of 21 nC to 40 nC
Input Capacitance (Ciss): Variation permitted within the range of 1750 pF to 1880 pF
Rds On (Max): Substitute parts with lower on-resistance (39 mOhm vs. 45 mOhm) are acceptable
Gate Threshold Voltage Vgs(th): Variation permitted within the range of 4.5V to 5V
Maximum Gate Voltage Vgs (Max): Substitute parts with ±20V rating are acceptable for applications not requiring ±30V capability

The substitute parts IRFB4615PBF and IRFB5615PBF meet all mandatory matching parameters and fall within allowable variation ranges for electrical characteristics.

Parameter Comparison

Parameter	IXTP42N15T	IRFB4615PBF	IRFB5615PBF	Unit
Manufacturer	IXYS	Infineon Technologies	Infineon Technologies	-
Drain to Source Voltage (Vdss)	150	150	150	V
Continuous Drain Current (Id) @ 25°C	42	35	35	A
Drive Voltage (Max Rds On)	10	10	10	V
Rds On (Max) @ Id, Vgs	45 @ 500mA, 10V	39 @ 21A, 10V	39 @ 21A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	4.5 @ 250µA	5 @ 100µA	5 @ 100µA	V
Gate Charge (Qg) (Max) @ Vgs	21 @ 10V	26 @ 10V	40 @ 10V	nC
Maximum Gate Voltage Vgs (Max)	±30	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1880 @ 25V	1750 @ 50V	1750 @ 50V	pF
Power Dissipation (Max)	200	144	144	W
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	-
Package / Case	TO-220-3	TO-220-3	TO-220-3	-
FET Type	N-Channel	N-Channel	N-Channel	-
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	-
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	-
Product Status	Active	Active	Active	-

Engineering Selection Recommendations

All three devices—IXTP42N15T, IRFB4615PBF, and IRFB5615PBF—maintain active product status with full RoHS3 compliance and REACH unaffected designation. All devices carry MSL Level 1 (Unlimited) moisture sensitivity classification, indicating no special moisture handling requirements during storage or assembly.

IXTP42N15T (Primary Part): The IXTP42N15T offers the highest continuous drain current rating at 42A and maximum power dissipation at 200W. This device is suitable for applications requiring maximum current-handling capacity and thermal performance. The ±30V maximum gate voltage specification provides extended gate drive flexibility.

IRFB4615PBF (Substitute): The IRFB4615PBF operates at 35A continuous drain current with 144W maximum power dissipation. This device is suitable for applications where the required drain current does not exceed 35A. The lower gate charge (26 nC) compared to IRFB5615PBF may provide faster switching characteristics in gate-drive-limited applications.

IRFB5615PBF (Substitute): The IRFB5615PBF operates at 35A continuous drain current with 144W maximum power dissipation. This device is suitable for applications where the required drain current does not exceed 35A. The higher gate charge (40 nC) indicates different switching dynamics compared to IRFB4615PBF.

Selection between substitute parts depends on application current requirements and gate drive characteristics. Both substitute parts are electrically and mechanically compatible with the IXTP42N15T within their rated specifications.

Frequently Asked Questions (FAQ)

Q: Can IRFB4615PBF or IRFB5615PBF be used as direct replacements for IXTP42N15T in all applications?

A: Direct substitution is permissible only in applications where the required continuous drain current does not exceed 35A. Applications requiring drain currents between 35A and 42A must retain the IXTP42N15T or redesign thermal management to accommodate the lower power dissipation rating (144W vs. 200W) of the substitute parts.

Q: What are the key electrical differences between IRFB4615PBF and IRFB5615PBF?

A: The primary electrical difference is gate charge: IRFB4615PBF specifies 26 nC maximum at 10V, while IRFB5615PBF specifies 40 nC maximum at 10V. Both devices share identical drain current (35A), power dissipation (144W), and voltage ratings (150V Vdss). The gate charge difference affects switching speed and gate drive requirements.

Q: Are the TO-220-3 packages of all three devices mechanically identical?

A: All three devices use TO-220-3 through-hole packaging. The mechanical footprint and pin configuration are identical, permitting direct PCB layout compatibility without modification.

Q: What is the impact of the ±20V maximum gate voltage on IRFB4615PBF and IRFB5615PBF compared to the ±30V rating of IXTP42N15T?

A: Applications utilizing gate drive voltages between ±20V and ±30V must retain the IXTP42N15T. Applications operating within ±20V gate drive specifications can use either substitute part without modification.

Q: Do all three devices meet the same regulatory and compliance standards?

A: Yes. All three devices are RoHS3 compliant, REACH unaffected, carry MSL Level 1 (Unlimited) moisture sensitivity classification, and maintain active product status. No compliance differences exist between the devices.

Q: What thermal considerations apply when substituting IRFB4615PBF or IRFB5615PBF for IXTP42N15T?

A: The substitute parts have lower maximum power dissipation (144W vs. 200W). Thermal design must accommodate this reduced capability. Applications operating near the thermal limits of the IXTP42N15T may require additional heatsinking or reduced operating current when using substitute parts.

Q: Can gate charge differences between IRFB4615PBF (26 nC) and IRFB5615PBF (40 nC) affect circuit performance?

A: Gate charge differences affect switching speed and gate drive current requirements. Applications with gate drive circuits optimized for specific gate charge values may experience different switching characteristics. Circuit simulation or testing is necessary to confirm performance compatibility in gate-drive-sensitive applications.

Q: Are there any inventory or lead time advantages to using substitute parts?

A: Inventory availability is provided for reference only and does not constitute a selection criterion. Part selection must be based on electrical and mechanical compatibility with application requirements.

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