IXTP3N60P N-Channel MOSFET 600V 3A Equivalent & Substitute Parts

Part Overview

The IXTP3N60P is an N-Channel MOSFET manufactured by IXYS in the PolarHV™ series, rated for 600V drain-to-source voltage with 3A continuous drain current at 25°C. The device is packaged in TO-220-3 through-hole configuration and rated for 70W maximum power dissipation. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	3	A
Power Dissipation (Max)	70	W
Rds On (Max) @ 500mA, 10V	2.9	Ohm
Gate Threshold Voltage (Vgs(th)) @ 50µA	5.5	V
Gate Charge (Qg) @ 10V	9.8	nC
Input Capacitance (Ciss) @ 25V	411	pF
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXTP3N60P is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: N-Channel topology
Package/Mounting: TO-220-3 through-hole configuration
Drain-to-Source Voltage (Vdss): Minimum 600V rating
Continuous Drain Current (Id): Minimum 3A at 25°C
Operating Temperature Range: -55°C to 150°C
Gate Drive Voltage: 10V maximum Rds On specification

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): Within ±30V gate voltage specification
Power Dissipation: Minimum 70W capability
On-State Resistance (Rds On): Performance at specified gate and drain conditions

Substitute parts must satisfy all primary criteria to ensure functional equivalence in circuit applications. Secondary parameters influence performance characteristics but do not preclude substitution when primary requirements are met.

Parameter Comparison

Parameter	IXTP3N60P	FQP3N60C	IXTP4N65X2	STP3LN80K5
Manufacturer	IXYS	Fairchild Semiconductor	IXYS	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	600	600	650	800
Id @ 25°C (A)	3	3	4	2
Power Dissipation Max (W)	70	75	80	45
Rds On (Max) @ 10V (Ohm)	2.9 @ 500mA	3.4 @ 1.5A	0.85 @ 2A	3.25 @ 1A
Vgs(th) (Max) (V)	5.5 @ 50µA	4 @ 250µA	5 @ 250µA	5 @ 100µA
Gate Charge Qg @ 10V (nC)	9.8	14	8.3	2.63
Ciss @ Specified Vds (pF)	411 @ 25V	565 @ 25V	455 @ 25V	102 @ 100V
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Product Status	Obsolete	Active	Active	Active

Engineering Selection Recommendations

FQP3N60C (Fairchild Semiconductor)

The FQP3N60C provides direct electrical equivalence to the IXTP3N60P with identical Vdss (600V) and Id (3A) ratings. Both devices share the same TO-220-3 package and operating temperature range. The FQP3N60C is classified as Active product status, ensuring ongoing availability and supply chain continuity. This substitute is suitable for applications requiring direct pin-compatible replacement without circuit modification. Higher gate charge (14 nC vs. 9.8 nC) and input capacitance (565 pF vs. 411 pF) may result in slightly increased switching losses in high-frequency applications.

IXTP4N65X2 (IXYS Ultra X2 Series)

The IXTP4N65X2 offers enhanced performance characteristics with higher Vdss (650V) and Id (4A) ratings compared to the IXTP3N60P. The device maintains TO-220-3 through-hole packaging and identical operating temperature range. Active product status and RoHS3 compliance provide long-term design support. The IXTP4N65X2 is suitable for applications where increased voltage margin and current capacity are beneficial. Lower on-state resistance (0.85 mOhm @ 2A vs. 2.9 Ohm @ 500mA) and reduced gate charge (8.3 nC vs. 9.8 nC) improve efficiency in switching applications. This substitute accommodates higher system stress conditions while maintaining thermal management within the 80W power dissipation rating.

STP3LN80K5 (STMicroelectronics MDmesh™ K5 Series)

The STP3LN80K5 provides higher voltage rating (800V Vdss) with reduced continuous drain current (2A vs. 3A). The device maintains TO-220-3 through-hole packaging and identical operating temperature range. Active product status and RoHS3 compliance ensure supply availability. This substitute is applicable in high-voltage applications where the 3A current requirement can be accommodated by the 2A rating, or where system design permits current derating. Significantly reduced gate charge (2.63 nC vs. 9.8 nC) and input capacitance (102 pF @ 100V vs. 411 pF @ 25V) enable faster switching transitions and lower gate drive power consumption. The 45W power dissipation rating requires thermal design verification for applications previously rated at 70W.

Frequently Asked Questions (FAQ)

Q: Can the FQP3N60C directly replace the IXTP3N60P without circuit modification?

A: Yes. The FQP3N60C shares identical Vdss (600V), Id (3A), and TO-220-3 package specifications with the IXTP3N60P. Pin configuration and electrical ratings permit direct substitution. Gate charge and input capacitance differences may affect switching speed and gate drive current requirements in high-frequency circuits, but do not prevent functional replacement.

Q: What is the primary advantage of the IXTP4N65X2 over the IXTP3N60P?

A: The IXTP4N65X2 provides higher voltage rating (650V vs. 600V) and increased current capacity (4A vs. 3A). Lower on-state resistance (0.85 mOhm vs. 2.9 Ohm) reduces conduction losses. These characteristics enable operation under higher system stress conditions while maintaining the same TO-220-3 package footprint.

Q: Is the STP3LN80K5 suitable for applications requiring 3A continuous current?

A: The STP3LN80K5 is rated for 2A continuous drain current, which is below the IXTP3N60P 3A specification. This substitute is applicable only in applications where the circuit design can accommodate 2A operation or where current derating is acceptable. System-level current requirements must be verified before substitution.

Q: Do all substitute parts maintain the same operating temperature range?

A: Yes. All substitute parts (FQP3N60C, IXTP4N65X2, and STP3LN80K5) operate across the -55°C to 150°C temperature range, matching the IXTP3N60P specification.

Q: What compliance certifications apply to the substitute parts?

A: The FQP3N60C does not specify RoHS status in the provided data. The IXTP4N65X2 and STP3LN80K5 are both RoHS3 compliant. All parts are REACH unaffected and classified under ECCN EAR99 or equivalent export control categories.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET on or off. The IXTP3N60P requires 9.8 nC, while the STP3LN80K5 requires only 2.63 nC. Lower gate charge reduces gate drive power consumption and enables faster switching transitions. Higher gate charge (FQP3N60C at 14 nC) increases gate drive requirements but does not prevent substitution in standard applications.

Q: Are all substitute parts available in the same packaging format?

A: Yes. All substitute parts are packaged in TO-220-3 through-hole configuration, matching the IXTP3N60P mechanical specification. Packaging materials differ (tube vs. standard), but this does not affect electrical compatibility or circuit board integration.

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