IXTP3N50P Equivalent & Substitute Parts

Part Overview

The IXTP3N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 3.6A continuous drain current at 25°C. This device is part of the PolarHV™ series and is housed in a TO-220-3 through-hole package. The IXTP3N50P is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement.

Substiute Parts

IXTP3N50P
IXYSIn Stock: 1075IXTP3N50P Datasheet
IXTP3N50P
Current Part
IXTP4N65X2
IXYSIn Stock: 2191IXTP4N65X2 Datasheet
IXTP4N65X2
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STP4N52K3
STMicroelectronicsIn Stock: 1458STP4N52K3 Datasheet
STP4N52K3
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STU4N52K3
STMicroelectronicsIn Stock: 3324STU4N52K3 Datasheet
STU4N52K3
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 3.6 A
Rds On (Max) @ Id, Vgs 2 Ohm @ 1.8A, 10V
Power Dissipation (Max) 70 W
Operating Temperature Range -55 to 150 °C
Package Type TO-220-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the IXTP3N50P is determined by the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • FET Type: N-Channel topology
  • Drain to Source Voltage (Vdss): Minimum 500V rating required
  • Current - Continuous Drain (Id): Minimum 3.6A at 25°C required
  • Rds On (Max): Lower or equivalent on-resistance at specified gate voltage
  • Power Dissipation: Minimum 70W capability
  • Operating Temperature Range: -55°C to 150°C minimum
  • Mounting Type: Through Hole configuration
  • Package Compatibility: TO-220 family packages (TO-220-3 or equivalent pin configurations)

Substitute parts must meet or exceed the electrical specifications of the main part while maintaining compatible through-hole mounting characteristics. Package variations within the TO-220 family are acceptable provided pin configuration and thermal characteristics remain compatible.

Parameter Comparison

Parameter IXTP3N50P IXTP4N65X2 STP4N52K3 STU4N52K3
Manufacturer IXYS IXYS STMicroelectronics STMicroelectronics
FET Type N-Channel N-Channel N-Channel N-Channel
Vdss (V) 500 650 525 525
Id @ 25°C (A) 3.6 4 2.5 2.5
Rds On (Max) @ 10V (Ohm) 2 0.85 2.6 2.6
Power Dissipation (Max) (W) 70 80 45 45
Gate Charge (Qg) @ 10V (nC) 9.3 8.3 11 11
Vgs (Max) (V) ±30 ±30 ±30 ±30
Operating Temperature (°C) -55 to 150 -55 to 150 to 150 to 150
Package Type TO-220-3 TO-220 TO-220 I-PAK (TO-251-3)
Product Status Obsolete Active Active Active

Engineering Selection Recommendations

IXTP4N65X2 (IXYS): This part is an active product from the same manufacturer (IXYS) and provides superior electrical performance with higher Vdss (650V), higher Id (4A), and lower Rds On (0.85 Ohm). It maintains the same TO-220 package family and operating temperature range. This substitute offers enhanced capability margins and is recommended for applications where higher voltage or current headroom is beneficial. RoHS3 compliance is confirmed.

STP4N52K3 (STMicroelectronics): This part is an active product with Vdss of 525V and Id of 2.5A, both meeting minimum substitution requirements. The TO-220 package maintains mechanical compatibility. However, the reduced continuous drain current (2.5A versus 3.6A) and lower power dissipation rating (45W versus 70W) indicate this substitute is suitable only for applications where the IXTP3N50P operates below 2.5A continuous current. RoHS3 compliance is confirmed.

STU4N52K3 (STMicroelectronics): This part is an active product with identical electrical specifications to STP4N52K3 (Vdss 525V, Id 2.5A, Rds On 2.6 Ohm). The primary difference is the I-PAK (TO-251-3) package, which is a different through-hole form factor. This substitute is suitable only for applications where the IXTP3N50P operates below 2.5A continuous current and where the I-PAK package footprint is acceptable. RoHS3 compliance is confirmed.

Frequently Asked Questions (FAQ)

Q: Can IXTP4N65X2 be used as a direct replacement for IXTP3N50P?

A: Yes. IXTP4N65X2 meets all minimum electrical requirements with superior performance margins. It maintains the same TO-220 package family, operating temperature range (-55°C to 150°C), and gate voltage rating (±30V). The higher Vdss (650V) and lower Rds On (0.85 Ohm) provide enhanced capability. Both devices are through-hole mounted and pin-compatible within the TO-220 family.

Q: What are the limitations of STP4N52K3 and STU4N52K3 as substitutes?

A: Both parts have a maximum continuous drain current of 2.5A, which is lower than the IXTP3N50P rating of 3.6A. These substitutes are suitable only for applications where the device operates below 2.5A continuous current. The power dissipation rating is also reduced to 45W versus 70W. Vdss is 525V, which exceeds the 500V requirement. These parts are not suitable for applications requiring the full 3.6A capability of the original part.

Q: Are there package compatibility issues between TO-220 and I-PAK?

A: TO-220 and I-PAK (TO-251-3) are different through-hole package families with different footprints and pin layouts. STU4N52K3 uses the I-PAK package while IXTP3N50P uses TO-220-3. These packages are not mechanically interchangeable on the same PCB without redesign of the mounting footprint and trace routing.

Q: What is the significance of product status (Active vs. Obsolete)?

A: IXTP3N50P is classified as obsolete, meaning it is no longer manufactured and existing inventory is limited. The three substitute parts (IXTP4N65X2, STP4N52K3, STU4N52K3) are all active products with confirmed ongoing availability and manufacturing support. Active products provide assurance of long-term supply chain continuity.

Q: Do all substitute parts meet RoHS compliance?

A: IXTP4N65X2, STP4N52K3, and STU4N52K3 are all confirmed RoHS3 compliant. The original IXTP3N50P does not list RoHS status in the provided specifications. All parts are REACH unaffected and classified under ECCN EAR99.

Q: Which substitute offers the best performance upgrade?

A: IXTP4N65X2 provides the most significant performance improvement with 650V Vdss (versus 500V), 4A Id (versus 3.6A), and substantially lower Rds On of 0.85 Ohm (versus 2 Ohm). This results in reduced conduction losses and improved thermal performance. It maintains full compatibility with the original TO-220 package family.

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