IXTP3N110 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP3N110 is an N-Channel 1100 V, 3 A MOSFET manufactured by IXYS in a Through Hole TO-220-3 package. This device is rated for 150 W power dissipation and operates across a temperature range of -55°C to 150°C. The IXTP3N110 is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXTP3N110

IXYSIn Stock: 956IXTP3N110 Datasheet

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IXTP2R4N120P

IXYSIn Stock: 698IXTP2R4N120P Datasheet

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IRFBG30PBF

Vishay SiliconixIn Stock: 30554IRFBG30PBF Datasheet

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STP3NK90Z

STMicroelectronicsIn Stock: 41570STP3NK90Z Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTP3N110 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• FET Type: N-Channel MOSFET (Metal Oxide Semiconductor)
• Package: TO-220-3 Through Hole configuration
• Drain to Source Voltage (Vdss): Minimum 1100 V
• Continuous Drain Current (Id): Minimum 3 A at 25°C
• Operating Temperature Range: -55°C to 150°C
• Gate Drive Voltage: 10 V maximum Rds On specification

Secondary Compatibility Factors:

• On-State Resistance (Rds On): Comparable performance at rated current and gate voltage
• Gate Threshold Voltage (Vgs(th)): Within ±20 V gate voltage specification
• Power Dissipation: Sufficient thermal capability for application requirements
• RoHS3 Compliance and MSL Level 1 rating

Substitute parts must maintain electrical performance within the application's design margins while preserving mechanical compatibility with existing PCB layouts and thermal management systems.

Parameter Comparison

Engineering Selection Recommendations

IXTP2R4N120P (IXYS)

The IXTP2R4N120P is an active product from the same manufacturer (IXYS) with higher voltage rating (1200 V vs. 1100 V). This part is suitable for applications where the IXTP3N110 is obsolete and higher voltage margin is acceptable. The continuous drain current is reduced to 2.4 A, which may limit direct substitution in current-critical applications. On-state resistance is higher at 7.5 Ohm, resulting in increased power dissipation. This substitute is appropriate when voltage headroom is prioritized over current capacity. RoHS3 compliance and MSL Level 1 rating are maintained.

IRFBG30PBF (Vishay Siliconix)

The IRFBG30PBF is an active product with voltage rating of 1000 V, which is 100 V below the IXTP3N110 specification. Continuous drain current is 3.1 A, matching the original part's current capability. On-state resistance is 5 Ohm at 1.9 A, providing comparable performance. Gate charge is significantly higher at 80 nC, which may affect switching speed in gate-drive-limited circuits. This substitute is suitable for applications where 1000 V voltage rating is sufficient and higher gate charge is tolerable. RoHS3 compliance is maintained; however, REACH status is affected. MSL Level 1 rating is preserved.

STP3NK90Z (STMicroelectronics)

The STP3NK90Z is an active product with the lowest voltage rating at 900 V, representing a 200 V reduction from the IXTP3N110 specification. Continuous drain current matches at 3 A, and on-state resistance is comparable at 4.8 Ohm. Gate charge is significantly lower at 22.7 nC, enabling faster switching characteristics. Power dissipation rating is reduced to 90 W. This substitute is appropriate only for applications where 900 V voltage rating is adequate and lower gate charge is beneficial. RoHS3 compliance and MSL Level 1 rating are maintained.

Frequently Asked Questions (FAQ)

Q: Can the IXTP2R4N120P directly replace the IXTP3N110 in all applications?

A: Direct replacement depends on application-specific current requirements. The IXTP2R4N120P has a lower continuous drain current rating (2.4 A vs. 3 A). If the application requires sustained current above 2.4 A, this substitute is not suitable. The higher voltage rating (1200 V) provides additional margin but does not compensate for reduced current capacity.

Q: Is the IRFBG30PBF suitable for high-voltage applications requiring 1100 V operation?

A: The IRFBG30PBF has a maximum Vdss rating of 1000 V, which is 100 V below the IXTP3N110 specification. This part is not suitable for applications where the full 1100 V voltage rating is required. Use this substitute only when the application voltage does not exceed 1000 V.

Q: What are the switching speed implications of using the STP3NK90Z?

A: The STP3NK90Z has a gate charge of 22.7 nC compared to 42 nC for the IXTP3N110. Lower gate charge enables faster switching transitions, which may improve efficiency in high-frequency applications. However, the reduced power dissipation rating (90 W vs. 150 W) must be verified against thermal requirements.

Q: Are all substitute parts compatible with existing PCB layouts designed for the IXTP3N110?

A: All substitute parts use the TO-220-3 Through Hole package, ensuring mechanical compatibility with existing PCB layouts. Pin configurations are identical. However, thermal management characteristics may differ due to variations in power dissipation ratings and on-state resistance. Thermal analysis should be performed for each substitute to ensure adequate heat dissipation.

Q: Do all substitute parts meet RoHS3 and MSL Level 1 requirements?

A: Yes, all three substitute parts (IXTP2R4N120P, IRFBG30PBF, and STP3NK90Z) are RoHS3 compliant and carry MSL Level 1 (Unlimited) moisture sensitivity ratings, matching the original IXTP3N110 specifications.

Q: What is the primary limitation of each substitute part?

A: IXTP2R4N120P: Reduced continuous drain current (2.4 A). IRFBG30PBF: Reduced voltage rating (1000 V) and higher gate charge (80 nC). STP3NK90Z: Significantly reduced voltage rating (900 V) and power dissipation (90 W).