IXTP32N20T N-Channel MOSFET 200V 32A Equivalent & Substitute Parts

Part Overview

The IXTP32N20T is an N-Channel MOSFET manufactured by IXYS, designed for high-current switching applications requiring 200V drain-to-source voltage capability. This device operates in the Through Hole TO-220-3 package and is classified as an active product with full RoHS3 compliance. The IXTP32N20T belongs to the Trench series of metal oxide semiconductor field-effect transistors and is suitable for power conversion, motor control, and industrial switching circuits.

Equivalent and substitute parts are identified based on matching critical electrical parameters: drain-to-source voltage rating, gate drive voltage, on-state resistance characteristics, gate charge, and thermal operating range. Substitute parts must maintain functional compatibility within the specified application envelope while accommodating minor variations in continuous drain current and power dissipation ratings.

Substiute Parts

IXTP32N20T

IXYSIn Stock: 811IXTP32N20T Datasheet

Current PartRFQ

IRFB4620PBF

Infineon TechnologiesIn Stock: 9203IRFB4620PBF Datasheet

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IRFB5620PBF

Infineon TechnologiesIn Stock: 26699IRFB5620PBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXTP32N20T are qualified based on the following critical electrical and mechanical parameters:

Voltage Rating Equivalence: All substitute parts maintain the 200V drain-to-source voltage (Vdss) specification, ensuring compatibility with circuits designed for this voltage class.

Gate Drive Compatibility: Substitute parts operate at the same 10V drive voltage for maximum on-state resistance specification, ensuring gate driver circuits require no modification.

On-State Resistance: Substitute parts maintain on-state resistance (Rds On) within 72–72.5 mOhm range at comparable gate-source voltage and drain current conditions, preserving switching loss characteristics.

Gate Charge and Input Capacitance: Substitute parts exhibit gate charge of 38 nC at 10V gate-source voltage and input capacitance within 1710–1760 pF range, maintaining gate drive timing and energy requirements.

Gate-Source Threshold Voltage: Substitute parts operate with threshold voltage (Vgs(th)) specifications between 4.5V and 5V at specified drain current levels, ensuring reliable gate switching behavior.

Thermal Operating Range: All substitute parts operate across the -55°C to 175°C junction temperature range, matching the thermal envelope of the primary part.

Package Configuration: Substitute parts are housed in TO-220-3 or TO-220AB through-hole packages, maintaining mechanical and thermal interface compatibility.

Regulatory Compliance: All substitute parts carry RoHS3 compliance and REACH unaffected status, matching the environmental and regulatory classification of the primary part.

Parameter Comparison

Engineering Selection Recommendations

Primary Part Selection: The IXTP32N20T remains the preferred choice for applications requiring the full 32A continuous drain current rating and 200W power dissipation capability. This part is active, in stock, and carries full RoHS3 and REACH compliance certifications.

Substitute Part Selection - IRFB4620PBF and IRFB5620PBF: Both Infineon substitute parts are qualified for applications where continuous drain current requirements do not exceed 25A and power dissipation remains within 144W limits. These parts are active products with identical RoHS3 compliance and REACH unaffected status. The IRFB5620PBF offers significantly higher inventory availability (26,635 units) compared to IRFB4620PBF (9,179 units).

Voltage and Gate Drive Compatibility: All three parts operate at 200V drain-to-source voltage and 10V gate drive voltage, ensuring direct compatibility with existing circuit designs without modification to power supply or gate driver stages.

On-State Resistance and Switching Characteristics: The substitute parts maintain on-state resistance within 0.5 mOhm of the primary part specification, with gate charge and input capacitance values that preserve switching frequency and efficiency characteristics within acceptable engineering tolerances.

Thermal Considerations: The primary part IXTP32N20T provides 200W power dissipation capability, while substitute parts are rated at 144W. Applications operating above 144W continuous dissipation require the primary part or thermal management modifications for substitute parts.

Regulatory and Environmental Compliance: All three parts meet RoHS3 requirements and carry REACH unaffected status, suitable for deployment in regulated industrial, automotive, and consumer applications.

Frequently Asked Questions (FAQ)

Q: Can IRFB4620PBF or IRFB5620PBF be used as direct replacements for IXTP32N20T in all applications?

A: Direct substitution is valid for applications where continuous drain current does not exceed 25A and power dissipation remains below 144W. Applications requiring the full 32A rating or 200W dissipation capability require the primary IXTP32N20T part.

Q: What is the significance of the 7A difference in continuous drain current rating between the primary and substitute parts?

A: The IXTP32N20T is rated for 32A continuous drain current at 25°C case temperature, while substitute parts are rated at 25A. This 7A difference directly impacts maximum circuit current capacity and thermal headroom. Circuit designs operating above 25A continuous current require the primary part.

Q: Are the TO-220-3 and TO-220AB packages mechanically interchangeable?

A: Both packages are through-hole TO-220 variants with identical pin pitch and mounting footprint. The primary difference is packaging format (tube versus bulk). PCB layout and thermal interface compatibility are maintained across both package types.

Q: How do the gate charge specifications affect gate driver selection?

A: All three parts specify 38 nC gate charge at 10V gate-source voltage. Gate drivers designed for the IXTP32N20T require no modification when substituting IRFB4620PBF or IRFB5620PBF parts. Gate drive timing and energy requirements remain equivalent.

Q: What is the impact of the 56 mOhm difference in on-state resistance between the primary part (72 mOhm @ 16A) and substitute parts (72.5 mOhm @ 15A)?

A: The 0.5 mOhm difference is negligible for most applications. At equivalent gate-source voltage (10V), both parts exhibit comparable on-state resistance characteristics. Switching loss and thermal dissipation differences are within normal engineering tolerance.

Q: Are there inventory or lead-time considerations when selecting between substitute parts?

A: IRFB5620PBF offers substantially higher inventory availability (26,635 units) compared to IRFB4620PBF (9,179 units). For applications where current rating requirements permit substitution, IRFB5620PBF may provide superior supply chain reliability.

Q: Do the substitute parts require different thermal management compared to the primary part?

A: The substitute parts are rated at 144W maximum power dissipation versus 200W for the primary part. Applications operating above 144W continuous dissipation require either the primary IXTP32N20T or enhanced thermal management (increased heatsink area, forced convection) for substitute parts.

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