IXTP2R4N50P Equivalent & Substitute Parts

Part Overview

The IXTP2R4N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 2.4A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is part of the PolarHV™ series. The part is currently classified as obsolete, necessitating identification of equivalent and substitute components for ongoing applications and new designs.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	2.4	A
On-State Resistance (Rds On Max) @ 10V	3.75	Ω
Gate Threshold Voltage (Vgs(th) Max)	5.5	V
Power Dissipation (Max)	55	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXTP2R4N50P is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: Substitute parts must maintain a drain-to-source voltage (Vdss) rating equal to or greater than 500V to ensure safe operation in the original application circuit.

Current Rating Compatibility: Continuous drain current (Id) at 25°C must be equal to or greater than 2.4A to support the same load conditions.

On-State Resistance (Rds On): Lower or equivalent Rds On values at 10V gate drive voltage indicate improved performance characteristics and reduced power dissipation.

Gate Threshold Voltage (Vgs(th)): Threshold voltage must be compatible with the circuit's gate drive voltage, typically within the ±30V maximum gate voltage specification.

Power Dissipation: Maximum power dissipation rating must support the thermal requirements of the application.

Package and Mounting: Substitute parts must be compatible with through-hole mounting and PCB layout constraints. TO-220-3 and equivalent through-hole packages are acceptable.

Product Status and Compliance: Active or available parts with current RoHS and REACH compliance are preferred over obsolete components.

Parameter Comparison

Parameter	IXTP2R4N50P	IXTP2N65X2	STP3NK50Z	STU4N52K3
Manufacturer	IXYS	IXYS	STMicroelectronics	STMicroelectronics
Vdss (V)	500	650	500	525
Id @ 25°C (A)	2.4	2.0	2.3	2.5
Rds On Max @ 10V (Ω)	3.75	2.3	3.3	2.6
Vgs(th) Max (V)	5.5	5.0	4.5	4.5
Gate Charge (Qg) @ 10V (nC)	6.1	4.3	15	11
Power Dissipation Max (W)	55	55	45	45
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220	TO-220-3	I-PAK (TO-251-3)
Product Status	Obsolete	Active	Not For New Designs	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXTP2N65X2 (IXYS): This part is an active product with ROHS3 compliance and shares the same manufacturer base series (IXTP2). It provides a higher voltage rating (650V) with improved on-state resistance (2.3Ω) and lower gate charge (4.3 nC), resulting in reduced switching losses. The continuous drain current is 2.0A, which is lower than the original 2.4A specification. This substitute is suitable for applications where the 2.0A rating is acceptable and higher voltage margin is beneficial. Package compatibility is maintained with TO-220 through-hole configuration.

STP3NK50Z (STMicroelectronics): This part maintains the same 500V voltage rating and provides comparable continuous drain current (2.3A) with improved on-state resistance (3.3Ω). However, the product status is listed as "Not For New Designs," limiting its suitability for new applications. Gate charge is significantly higher (15 nC), indicating increased switching losses. Power dissipation is reduced to 45W. This substitute is suitable only for replacement in existing designs where the original IXTP2R4N50P is already deployed.

STU4N52K3 (STMicroelectronics): This part is an active product with ROHS3 compliance, offering the highest continuous drain current (2.5A) and improved on-state resistance (2.6Ω). The voltage rating is 525V, providing adequate margin above the 500V specification. Gate charge is moderate (11 nC). The primary consideration is the package format: I-PAK (TO-251-3) differs from the original TO-220-3, requiring PCB layout modification. This substitute is recommended for new designs where package compatibility can be accommodated.

Frequently Asked Questions (FAQ)

Q: Can IXTP2N65X2 be used as a direct replacement for IXTP2R4N50P?

A: IXTP2N65X2 is functionally compatible with the IXTP2R4N50P in applications where the continuous drain current requirement does not exceed 2.0A. The higher voltage rating (650V vs. 500V) provides additional safety margin. The TO-220 package is mechanically compatible with TO-220-3 footprints. However, the lower current rating must be verified against circuit requirements before substitution.

Q: What are the advantages of STP3NK50Z over the original IXTP2R4N50P?

A: STP3NK50Z provides improved on-state resistance (3.3Ω vs. 3.75Ω), resulting in lower conduction losses and reduced heat generation. The voltage and current ratings are closely matched to the original specification. However, the product status "Not For New Designs" indicates this part is in end-of-life phase and should be used only for replacement in existing applications.

Q: Why does STU4N52K3 have a different package than the original part?

A: STU4N52K3 uses I-PAK (TO-251-3) packaging instead of TO-220-3. While both are through-hole packages, the pin configuration and PCB footprint differ. I-PAK provides improved thermal performance due to its design, but requires PCB layout modification. This package change is acceptable for new designs where layout can be adapted.

Q: Are all substitute parts RoHS compliant?

A: IXTP2N65X2, STP3NK50Z, and STU4N52K3 are all ROHS3 compliant. The original IXTP2R4N50P does not specify RoHS status. All substitute parts are REACH unaffected and carry EAR99 ECCN classification, matching the original part's regulatory profile.

Q: What is the impact of gate charge differences on circuit performance?

A: Gate charge (Qg) affects switching speed and gate drive circuit requirements. IXTP2N65X2 has the lowest gate charge (4.3 nC), enabling faster switching and lower gate drive power consumption. STP3NK50Z has the highest gate charge (15 nC), requiring more gate drive current but potentially offering better noise immunity. STU4N52K3 provides a middle ground (11 nC). Selection depends on the specific gate drive circuit design.

Q: Can STU4N52K3 be used in applications requiring TO-220-3 mounting?

A: No. STU4N52K3 uses I-PAK (TO-251-3) packaging with different pin spacing and footprint. Direct PCB mounting without layout modification is not possible. However, adapter boards or custom PCB redesign can accommodate this package if the electrical performance benefits justify the effort.

Q: What is the significance of the 525V rating on STU4N52K3 compared to the 500V original?

A: The 525V rating on STU4N52K3 provides a 5% voltage margin above the original 500V specification, offering improved safety and reliability in applications with voltage transients or supply variations. This higher rating does not negatively impact performance and is considered a beneficial characteristic for substitution.

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