IXTP2N80P Equivalent & Substitute Parts

Part Overview

The IXTP2N80P is an N-Channel 800V 2A MOSFET manufactured by IXYS in the PolarHV™ series, housed in a TO-220-3 through-hole package. This device is rated for 70W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently classified as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning.

Substitute parts are necessary due to the obsolete status of the IXTP2N80P. Active alternatives with comparable or enhanced electrical characteristics are available from both IXYS and STMicroelectronics, enabling seamless integration into existing designs or new production runs.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	2	A
Rds On (Max) @ Id, Vgs	6	Ohm @ 1A, 10V
Gate Threshold Voltage (Vgs(th)) (Max)	5.5	V @ 50µA
Power Dissipation (Max)	70	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution eligibility for the IXTP2N80P is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 800V minimum
Continuous Drain Current (Id): 2A minimum at 25°C
Package Type: TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C minimum
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Secondary Compatibility Factors:

Gate drive voltage compatibility (10V nominal)
Maximum gate-source voltage (±30V)
Thermal characteristics and power dissipation capability

All three substitute parts meet or exceed the primary substitution criteria. The IXFP4N85X provides enhanced current handling and power dissipation. The STP2N80K5 and STP3NK80Z maintain electrical parity with the original part while offering active product status and RoHS3 compliance.

Parameter Comparison

Parameter	IXTP2N80P	IXFP4N85X	STP2N80K5	STP3NK80Z
Manufacturer	IXYS	IXYS	STMicroelectronics	STMicroelectronics
Vdss (V)	800	850	800	800
Id @ 25°C (A)	2	3.5	2	2.5
Rds On (Max) @ Id, Vgs (Ohm)	6 @ 1A, 10V	2.5 @ 2A, 10V	4.5 @ 1A, 10V	4.5 @ 1.25A, 10V
Vgs(th) (Max) (V)	5.5 @ 50µA	5.5 @ 250µA	5 @ 100µA	4.5 @ 50µA
Gate Charge (Qg) (Max) @ 10V (nC)	10.6	7	3	19
Input Capacitance (Ciss) (Max) @ 25V (pF)	440	247	95	485
Power Dissipation (Max) (W)	70	150	45	70
Operating Temperature Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active
RoHS Status	Not specified	Not specified	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

IXFP4N85X (IXYS HiPerFET™ Ultra X Series)

The IXFP4N85X is suitable for applications requiring enhanced performance margins. This part offers 850V Vdss rating, 3.5A continuous drain current, and 150W power dissipation—all exceeding the IXTP2N80P specifications. The lower on-resistance (2.5Ohm @ 2A, 10V) and reduced gate charge (7nC @ 10V) provide improved switching efficiency. The part maintains active product status and is available in high inventory quantities (18,350 pcs). This substitute is appropriate for new designs or high-volume production requiring superior thermal and electrical performance.

STP2N80K5 (STMicroelectronics SuperMESH5™ Series)

The STP2N80K5 provides direct electrical equivalence to the IXTP2N80P with identical Vdss (800V) and Id (2A) ratings. This part features improved on-resistance (4.5Ohm @ 1A, 10V) and significantly reduced gate charge (3nC @ 10V), enabling faster switching and lower gate drive power consumption. RoHS3 compliance and active product status make this substitute ideal for applications with regulatory requirements or long-term supply chain stability needs. Power dissipation is rated at 45W, which is lower than the original part.

STP3NK80Z (STMicroelectronics SuperMESH™ Series)

The STP3NK80Z offers a performance intermediate between the IXTP2N80P and IXFP4N85X. With 800V Vdss and 2.5A continuous drain current, this part provides 25% higher current capability while maintaining the same 70W power dissipation as the original. On-resistance is 4.5Ohm @ 1.25A, 10V. RoHS3 compliance and active product status support long-term availability. This substitute is suitable for applications requiring modest performance enhancement with maintained thermal characteristics.

All three substitutes are compatible with the original TO-220-3 through-hole footprint and operate across the identical temperature range (-55°C to 150°C). Selection should be based on specific application requirements for current handling, power dissipation, switching speed, and regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can the IXFP4N85X directly replace the IXTP2N80P in existing designs?

A: Yes. The IXFP4N85X is pin-compatible in the TO-220-3 package and exceeds all critical electrical specifications of the IXTP2N80P. The higher Vdss (850V vs. 800V), increased current rating (3.5A vs. 2A), and improved on-resistance provide enhanced performance margins. No circuit modifications are required for direct substitution.

Q: What is the primary advantage of the STP2N80K5 over the IXTP2N80P?

A: The STP2N80K5 maintains electrical parity with the IXTP2N80P while offering significantly reduced gate charge (3nC vs. 10.6nC @ 10V), enabling faster switching transitions and lower gate drive power consumption. Additionally, the STP2N80K5 is RoHS3 compliant and maintains active product status, ensuring long-term supply chain availability.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes. All three substitute parts—IXFP4N85X, STP2N80K5, and STP3NK80Z—are housed in TO-220-3 through-hole packages with identical pin configurations. Direct PCB footprint compatibility is confirmed.

Q: Which substitute part should be selected for thermal-constrained applications?

A: The STP2N80K5 is rated for 45W maximum power dissipation, which is lower than the IXTP2N80P (70W). For applications with strict thermal constraints, the IXTP2N80P or STP3NK80Z (both 70W) are more appropriate. The IXFP4N85X, rated at 150W, provides the highest thermal headroom.

Q: Do all substitute parts meet the same regulatory requirements as the IXTP2N80P?

A: All substitute parts maintain REACH Unaffected status, matching the original part. The STP2N80K5 and STP3NK80Z are additionally RoHS3 compliant, providing enhanced regulatory coverage for applications with strict environmental requirements.

Q: What is the impact of different gate charge specifications on circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The STP2N80K5 (3nC) requires significantly less gate drive energy than the IXTP2N80P (10.6nC), reducing power consumption in the gate drive circuit and enabling faster switching. The STP3NK80Z (19nC) requires more gate drive energy but may offer other performance benefits in specific applications.

Q: Can the IXTP2N80P be used interchangeably with the STP3NK80Z in existing production?

A: Yes. The STP3NK80Z is a direct substitute with matching Vdss (800V), identical operating temperature range (-55°C to 150°C), and equivalent power dissipation (70W). The 25% higher current rating (2.5A vs. 2A) provides additional design margin without requiring circuit modifications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message